W. Fong

发表

Growth of highly textured SnS on mica using an SnSe buffer layer

S. F. Wang, C. Surya, W. Fong, 2014 .

Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers

C. Surya, W. Fong, K. Leung, 2011 .

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Paddy K. L. Chan, Charles Surya, K. K. Leung, 2010 .

Photoluminescence of rapid-thermal annealed Mg-doped GaN films

C. Surya, W. Fong, Zhan-guo Wang, 2001 .

Growth and Characterization of GaN/InGaN Multiple Quantum Wells on Nanoscale Epitaxial Lateral Overgrown Layers

C. Surya, W. Fong, K. Leung, 2011 .

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

S. Lau, C. Cao, C. Surya, 2012 .

The Effect of Indium Surfactant on the Optoelectronic and Structural Properties of MBE Grown Gallium Nitride

Jianbin Xu, C. Surya, W. Fong, 2000 .

Tin Compensation for the SnS Based Optoelectronic Devices

S. F. Wang, C. Surya, W. Fong, 2017, Scientific Reports.

Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects

C. Surya, W. Fong, B. Ye, 2007 .

Realization of Erythemal UV Detectors Using Ni/GaN Schottky Junctions

H. F. Lui, C. Surya, W. Fong, 2009, IEEE Transactions on Electron Devices.

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

C. Surya, W. Fong, C. Zhu, 2002 .

Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers

C. Surya, W. Fong, C. Zhu, 2000 .

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

A. Ng, A. Djurišić, Xinyi Chen, 2012 .

Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

H. F. Lui, C. Surya, W. Fong, 2009, 2009 14th OptoElectronics and Communications Conference.

Photoluminescence of rapid-thermal annealed Mg-doped GaN films

C. Surya, W. Fong, Z. Wang, 1999, Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458).

Effects of rapid thermal annealing on the structural properties of GaN thin films

C. Surya, W. Fong, C. Zhu, 2001 .

Study of low-frequency excess noise in RTA annealed n-type gallium nitride

C. Surya, W. Fong, B. Leung, 2000, Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503).

Nature of Low-Frequency Excess Noise in n-Type Gallium Nitride

C. Surya, W. Fong, C. Zhu, 2000 .

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)

Jianbin Xu, Liang Wang, C. Surya, 2000 .

Growth behavior of ZnO nanowires on Au-seeded SiO2–GaN co-substrate by vapor transport and deposition

C. Surya, W. Fong, K. Leung, 2013 .

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

W. K. Fong, E. Z. Luo, I. H. Wilson, 2002, Microelectron. Reliab..

Fabrication and characterization of indium‐tin‐oxide/GaN visible‐blind UV detectors

H. F. Lui, A. Djurišić, C. Surya, 2006 .

Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs

P. T. Lai, Charles Surya, W. K. Fong, 1996 .

Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source

C. Surya, W. Fong, K. Leung, 2007 .

High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method

M. Pilkuhn, C. Surya, W. Fong, 2007 .

Investigation of low-frequency noise in van der Waals epitaxies

S. F. Wang, C. Surya, W. Fong, 2013, International Conference on Noise and Fluctuations.

MBE growth of van der Waals epitaxy using graphene buffer layer

S. F. Wang, S. Lau, C. Lam, 2013, International Symposium on Next-Generation Electronics.

Growth of epitaxial quality SnS thin films on graphene

S. F. Wang, S. Lau, C. Surya, 2012, International Conference on Electron Devices and Solid-State Circuits.

High quality SnS van der Waals epitaxies on graphene buffer layer

Charles Surya, W. Wang, K. K. Leung, 2012, Other Conferences.

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

S. F. Wang, S. Lau, C. Surya, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate

S. F. Wang, S. Lau, C. Surya, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

Charles Surya, B. H. Leung, C. Surya, 2003 .

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

C. Surya, W. Fong, K. H. Wong, 2001 .

Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

C. Surya, W. Fong, C. Zhu, 2002 .

Piezoelectric coefficient of GaN measured by laser interferometry

C. Choy, H. Chan, P. Chow, 1999 .

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

C. Surya, W. Fong, C. Zhu, 2001 .

Study of low-frequency excess noise in GaN materials

C. Surya, W. Fong, B. Leung, 2003 .

Piezoelectric coefficients of aluminum nitride and gallium nitride

C. Choy, H. Chan, C. Surya, 1999 .

Doping of GaN by Mg diffusion

A. Djurišić, C. Surya, W. Fong, 2002, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

C. Surya, W. Fong, B. Leung, 2001 .