K. Tong

发表

Studies of high DC current induced degradation in III-V nitride based heterojunctions

K. Y. Tong, Charles Surya, W. Y. Ho, 2000 .

Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric

K. Y. Tong, Jiyan Dai, H. Chan, 2006 .

The threshold voltage of short-channel BC-MOSFET in the enhancement mode

K. Tong, 1987 .

Current characteristics of polycrystalline thin-film transistors using sputtered silicon films

K. Tong, E. Jelenkovic, 1993 .

Effect of oxygen content and thickness of sputtered RuOx electrodes on the ferroelectric and fatigue properties of sol-gel PZT thin films

M. C. Poon, Kun Li, Jinhua Li, 1999 .

Effect of SiGe thickness on crystallisation and electrical properties of sputtered silicon film in Si/SiGe/insulator structure

K. Tong, E. Jelenkovic, 1998 .

Properties of crystallized Si1−xGex thin films deposited by sputtering

W. Y. Cheung, K. Tong, C. Mak, 1997 .

Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation

M. Videnovic-Misic, K. Tong, M. Pejovic, 2011 .

Nitridation of hafnium oxide by reactive sputtering

J. Dai, K. Tong, E. Jelenkovic, 2006 .

Noise and structural properties of reactively sputtered RuO2 thin films

K. Tong, E. Jelenkovic, M. Jevtic, 2006 .

SiGe–Si junctions with boron-doped SiGe films deposited by co-sputtering

W. Y. Cheung, K. Tong, B. Shi, 2006 .

On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering

W. Y. Cheung, K. Tong, E. Jelenkovic, 2007 .

Effect of deposition conditions on stability of sputtered oxide in MOS structures

K. Tong, E. Jelenkovic, 1995, Proceedings of International Conference on Microelectronics.

Electroluminescence in porous polycrystalline silicon

K. Tong, P. W. Chan, W. N. Huang, 1998 .

A Led Based on Porous Polycrystalline Silicon

K. Tong, P. W. Chan, W. N. Huang, 1997 .

Leakage current in PZT films with sputtered RuOx electrodes

K. Tong, K. Li, C. Law, 2000 .

Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method

Kun Li, K. Wong, K. Tong, 1998, Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368).

Study of polarization switching in PZT films with RuO2 electrodes by conducting atomic force microscopy

C. Choy, Jianbin Xu, H. Chan, 2002 .

Physical and electrical properties of sputtered Ru2Si3/Si structures

W. Y. Cheung, K. Tong, E. Jelenkovic, 2003 .

Low temperature doping of poly-SiGe films with boron by co-sputtering

M. C. Poon, W. Y. Cheung, K. Tong, 2000 .

Stability of nitrided silicon dioxide deposited by reactive sputtering

K. Tong, E. Jelenkovic, 1995 .

Preparation and characterization of epitaxial films and of an all a-axis oriented heterostructure on (001) by pulsed laser deposition

K. Wong, K. Tong, J. Cheung, 1997 .

Thermally grown ruthenium oxide thin films

K. Tong, E. Jelenkovic, 2004 .

RuO 2 -SiO 2 composite thin films with wide resistivity range

W. Y. Cheung, K. Tong, E. Jelenkovic, 2004 .

Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress

M. Kovačević, K. Tong, D. Nikezić, 2013 .

Charge relaxation in nitrided and non-nitrided sputtered oxide

K. Tong, E. Jelenkovic, 1999 .

Nitridation of sputtered silicon dioxide films

K. Y. Tong, E. V. Jelenkovic, K. Tong, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

Effect of implanted fluorine on MOS structures with sputtered SiO2 insulator

K. Tong, E. Jelenkovic, J. Wong, 1994 .

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress (Invited Paper)

K. Y. Tong, H. Schweizer, C. Surya, 2005, SPIE International Symposium on Fluctuations and Noise.

Effect of pyrolysis temperature on the characteristics of PZT films deposited by the sol-gel method

K. Y. Tong, Kun Li, Kun Li, 1998 .

Thin film transistors based on sputtered silicon and gate oxide films

K. Tong, C. Ong, E.V. Jelenkovic, 1996, Proceedings 1996 IEEE Hong Kong Electron Devices Meeting.

Positive bias temperature instability of irradiated n-channel thin film transistors

D. Z. Stupar, M. Kovačević, J. Bajić, 2014 .

Effect of fatigue on the pyroelectric and dielectric properties of PZT films

C. Choy, H. Chan, K. Kwok, 2001 .

EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

Y. Wong, K. Tong, P. W. Chan, 1993 .

Characterization of Flicker Noise in GaN Based Modfets at Low Drain Bias

H. Morkoç, W. Fong, K. Tong, 1999 .

Numerical simulation of current–voltage characteristics of AlGaN/GaN HEMTs at high temperatures

K. Y. Tong, Charles Surya, C. Surya, 2005 .

Temperature dependence of resistance in reactively sputtered RuO2 thin films

K. Tong, S. Wong, W. Cheung, 2001 .

Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 degreeC

K. Y. Tong, Emil V. Jelenkovic, W. Y. Cheung, 2003, Microelectron. Reliab..

Pulsed laser induced annealing and spin-on-doping in silicon wafers

V. Lo, K. Tong, P. W. Chan, 1996, ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.

Excimer laser assisted spin-on doping of boron into silicon

V. Lo, Y. Wong, K. Tong, 1996 .

Properties of furnace crystallized polysilicon films prepared by r.f. sputtering

W. Lee, K. Tong, Z. Sun, 1996 .

A physical analytical model of multilayer on-chip inductors

C. Tsui, K. Tong, K.Y. Tong, 2005, IEEE Transactions on Microwave Theory and Techniques.

A compact large signal model of LDMOS

K. Y. Tong, C. W Tang, K. Tong, 2002 .

Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays

I. Bello, Wenjun Zhang, C. Surya, 2009 .

A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect

K. Y. Tong, Yimen Zhang, Yuming Zhang, 2006 .