A. Karmann

Individual, attractive defect centers in the SiO2-Si interface of μm-sized MOSFETs

Max J. Schulz, M. Schulz, A. Karmann, 1991 .

Single, individual traps in MOSFETs

M. Schulz, A. Karmann, M Schulz, 1991 .

Individual defects at the Si:SiO2 interface

Michael J. Uren, M. J. Kirton, S. Collins, 1989 .

GRID spectroscopy — a new nuclear method for lattice site localization of foreign atoms

A. Karmann, H. Börner, M. Jentschel, 1998 .