V. N. Ramakrishnan

发表

Design of Montgomery Multiplier for High Speed Pairing Computation with Modified Compressor for Floating-point Unit

R. Dhanabal, V. N. Ramakrishnan, 2020 .

Low Power Structural Design of 2–4 and 4–16 Line Decoder Logic Circuit

R. Dhanabal, V. N. Ramakrishnan, Nikita Kar Chowdhury, 2020 .

Application of memristors in active filters

V. N. Ramakrishnan, Sincy Ann Saji, S. Vishnu, 2016, 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS).

Topological variation on sub-20 nm double-gate inversion and Junctionless-FinFET based 6T-SRAM circuits and its SEU radiation performance

P. Chitra, V. N. Ramakrishnan, S. Nilamani, 2018, Microelectron. Reliab..

A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs

P. Suveetha Dhanaselvam, N. B. Balamurugan, V. N. Ramakrishnan, 2013, Microelectron. J..

Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance

Sridevi Sriadibhatla, V. N. Ramakrishnan, Singh Rohitkumar Shailendra, 2019, Journal of Computational Electronics.

Soft error study in double gated FinFET-based SRAM cells with simultaneous and independent driven gates

R. Srinivasan, V. N. Ramakrishnan, 2012, Microelectron. J..

Effect of underlap and soft error performance in 30 nm FinFET-based 6T-SRAM cells with simultaneous and independent driven gates

V. N. Ramakrishnan, R. Srinivasan, 2013 .

IMPACT OF PROCESS VARIATION ON MULTIPLE-TUBE GAA- CNTFETS

V. N. Ramakrishnan, Singh Rohitkumar Shailendra, Singh Rohit Kumar Shailendra, 2018 .

Analysis of quantum capacitance on different dielectrics and its dependence on threshold voltage of CNTFET

V. N. Ramakrishnan, Singh Rohitkumar Shailendra, 2017, 2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2).

Radiation effects on memristor-based non-volatile SRAM cells

V. N. Ramakrishnan, H. M. Vijay, 2018 .

Conductive Filament Variation of RRAM and Its Impact on Single Event Upset

V. N. Ramakrishnan, H. M. Vijay, 2021, Transactions on Electrical and Electronic Materials.

Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle

V. N. Ramakrishnan, P. Vimala, K. Ramkumar, 2021, Journal of Computational Electronics.

Optimization of Vertical GaN SGT-MOSFET for Low Ron

V. N. Ramakrishnan, N. Jaiswal, Sukhendu deb Roy, 2020, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOM

V. N. Ramakrishnan, N. Jaiswal, 2022, Semiconductor Science and Technology.

Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation

V. N. Ramakrishnan, S. Nilamani, 2017 .

A Novel Approach to Analyze the Resistance of the RRAM Based on the Conductive Nano Filament Length and Width Variation

V. N. Ramakrishnan, H. M. Vijay, 2021, Transactions on Electrical and Electronic Materials.

Modeling and Simulation of Gated Memristor

V. N. Ramakrishnan, N. Amarnath, 2020 .

Performance Analysis of Germanium-Silicon Vertical Tunnel Field-Effect Transistors (Ge-Si-VTFETs) for Analog/RF Applications

V. N. Ramakrishnan, K. Ramkumar, 2022, Silicon.

Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors

V. N. Ramakrishnan, K. Yamaguchi, D. Moraru, 2021, Applied Physics Express.

Temperature Dependent Carrier Transport in Hydrogenated Amorphous Semiconductors for Thin Film Memristive Applications

V. N. Ramakrishnan, M. Chakraverty, 2022, Materials Science Forum.

InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications

V. N. Ramakrishnan, N. Jaiswal, 2019, Handbook for III-V High Electron Mobility Transistor Technologies.

Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM

V. N. Ramakrishnan, S. Roy, N. Jaiswal, 2020, 2020 IEEE 17th India Council International Conference (INDICON).

Dual-chirality GAA-CNTFET-based SCPF-TCAM cell design for low power and high performance

V. N. Ramakrishnan, Singh Rohitkumar Shailendra, S. V. V. Satyanarayana, 2019, Journal of Computational Electronics.

Effect of underlap and soft error performance in 30 nm FinFET-based 6T-SRAM cells with simultaneous and independent driven gates

V. N. Ramakrishnan, R. Srinivasan, 2013, Journal of Computational Electronics.

AC Gain analysis of Multi-stage Common Source Amplifier Using GAA-CNTFET

Hidenori Mimura, V. N. Ramakrishnan, Singh Rohitkumar Shailendra, 2020, 2020 5th International Conference on Devices, Circuits and Systems (ICDCS).

Radiation effects on memristor-based non-volatile SRAM cells

V. N. Ramakrishnan, H. M. Vijay, 2017, Journal of Computational Electronics.

Design of Radiation Hardened Complementary Folded Cascode Amplifier

V. N. Ramakrishnan, Harish Koonapalli, 2020 .

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

V. N. Ramakrishnan, Arathy Varghese, V. Lakshmi, 2020, Journal of Science: Advanced Materials and Devices.

Principles of Logic Design with Nanoscale Thin Film Memristive Systems for High Performance Digital Circuit Applications

V. N. Ramakrishnan, M. Chakraverty, 2023, Advanced Materials Research.

A Qualitative Study of Materials and Fabrication Methodologies for Two Terminal Memristive Systems

V. N. Ramakrishnan, M. Chakraverty, 2020 .

Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)

V. N. Ramakrishnan, C. Usha, P. Vimala, 2020 .

Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter

V. N. Ramakrishnan, N. Jaiswal, 2020, Transactions on Electrical and Electronic Materials.

Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET

V. N. Ramakrishnan, J. Pravin, V. Sandeep, 2023, Journal of Computational Electronics.