A. Markov

发表

GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide

N. B. Smirnov, S. S. Malakhov, S. Pearton, 2010 .

Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy

Andrei Osinsky, Stephen J. Pearton, A. V. Govorkov, 2007 .

Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

S. Pearton, J. Zavada, A. Polyakov, 2007 .

Electron irradiation of AlGaN /GaN and AlN /GaN heterojunctions

N. B. Smirnov, S. Pearton, A. Osinsky, 2008 .

Fast neutron irradiation effects in n-GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Neutron irradiation effects in AlGaN/GaN heterojunctions

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2006 .

Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2006 .

Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Stephen J. Pearton, A. V. Govorkov, A. V. Markov, 2005 .

Neutron irradiation effects in p‐GaN

N. B. Smirnov, S. Pearton, A. Osinsky, 2006 .

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy

S. Pearton, A. Osinsky, A. Dabiran, 2007 .

Fermi level pinning in heavily neutron-irradiated GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2006 .

Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues

N. B. Smirnov, T. J. Bowles, V. Eremin, 2001 .

Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

S. Pearton, R. Wilson, A. Polyakov, 1995 .

Bulk GaAs as a solar neutrino detector

T. J. Bowles, V. Eremin, A. Polyakov, 2001 .

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2009 .

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

H. Amano, A. Polyakov, A. Markov, 2009 .

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

In‐Hwan Lee, T. Ko, A. Polyakov, 2010 .

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2008 .

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

Amir Dabiran, S. J. Pearton, Andrei Osinsky, 2007 .

Carbon in undoped Si-GaAs: The influence of growth conditions

A. Markov, A. M. Nosovsky, N. Mikhailova, 1991 .

A. Markov, A. Polyakov, E. Omeljanovsky, 1990 .

A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements

T. J. Bowles, V. Eremin, A. Markov, 2003 .

Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals

A. Markov, M. G. Mil’vidskiĭ, V. G. Osvenskii, 1992 .

Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods

N. B. Smirnov, A. Polyakov, A. Markov, 2002 .

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

T. J. Bowles, V. Eremin, A. Polyakov, 2000 .

Study of GaAs as a material for solar neutrino detectors

N. B. Smirnov, T. J. Bowles, V. Eremin, 2000 .

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

A. Markov, V. Chaldyshev, A. E. Kunitsyn, 1997 .

Study of microdefects in GaAs:Si single crystals grown by the vertical gradient freeze method

A. Markov, M. Voronova, V. Bublik, 2007 .

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

N. B. Smirnov, A. Polyakov, A. Markov, 2007 .

Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, S. S. Malakhov, S. Pearton, 2008 .

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

Stephen J. Pearton, A. Y. Polyakov, N. B. Smirnov, 2006 .

Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates

S. Pearton, A. Polyakov, A. Markov, 2006 .

Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry

N. B. Smirnov, T. J. Bowles, A. Markov, 2007 .

Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2009 .

Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2008 .

Comparative Ellipsometric Analysis of Silicon Carbide Polytypes 4H, 15R, and 6H Produced by a Modified Lely Method in the Same Growth Process

A. Markov, V. Luchinin, S. Kukushkin, 2020, Technical Physics Letters.

Electrical properties and deep levels in bulk solution grown GaAs crystal

N. B. Smirnov, T. J. Bowles, V. Eremin, 2002 .

Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask

V. B. Mityukhlyaev, N. B. Smirnov, S. S. Malakhov, 2009 .

Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films

H. Amano, A. Polyakov, A. Markov, 2009 .

Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques

A. Polyakov, A. Markov, A. Govorkov, 2004 .

Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide

V. Eremin, A. Polyakov, A. Markov, 2004 .

Effect of thermal annealing conditions on the microdefect formation in undoped GaAs single crystals grown by Czochralski method

A. Markov, M. Voronova, V. Bublik, 2000 .