A. Govorkov

发表

GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide

N. B. Smirnov, S. S. Malakhov, S. Pearton, 2010 .

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, Y. Makarov, S. Pearton, 2014 .

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Joan M. Redwing, S. J. Pearton, K. P. Lee, 2001 .

Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy

Andrei Osinsky, Stephen J. Pearton, A. V. Govorkov, 2007 .

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers

Stephen J. Pearton, N. B. Smirnov, A. V. Govorkov, 2000 .

Spatial distribution of electrical properties in GaN p-i-n rectifiers

A. P. Zhang, J. Chyi, T. Nee, 2000 .

Proton implantation effects on electrical and recombination properties of undoped ZnO

V. A. Dravin, S. Pearton, K. Ip, 2003 .

Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

S. Pearton, J. Zavada, A. Polyakov, 2007 .

Effects of Sc2 O 3 Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors

N. B. Smirnov, F. Ren, S. Pearton, 2004 .

Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures

S. Pearton, A. Polyakov, A. Govorkov, 2004 .

Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors

N. B. Smirnov, F. Ren, S. Pearton, 2003 .

GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

N. B. Smirnov, A. I. Babanin, A. Polyakov, 2000 .

GaN 20-mm diameter ingots grown from melt-solution by seeded technique

N. B. Smirnov, A. I. Babanin, A. Polyakov, 1999 .

The properties of heavily compensated high resistivity GaSb crystals

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Ion implantation effects in GaSb

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

A. Milnes, A. Polyakov, A. Govorkov, 1994 .

Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb

S. Pearton, A. Milnes, A. Polyakov, 1994 .

Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices

S. Pearton, A. Osinsky, P. Chow, 2001 .

Effects of hydrogen plasma treatment on electrical properties of p-AlGaN

F. Ren, K. Baik, S. Pearton, 2004 .

Defects and localized states in MBE-grown GaAs1−x N x solid solutions prepared by molecular-beam epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 2003 .

Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Electronic properties and deep traps in electron-irradiated n-GaN

N. B. Smirnov, V. S. Ermakov, A. Polyakov, 2012 .

10 MeV electrons irradiation effects in variously doped n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Neutron transmutation doping effects in GaN

N. B. Smirnov, S. Pearton, A. Polyakov, 2010 .

Electron Irradiation Effects in GaN ∕ InGaN Multiple Quantum Well Structures

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2008 .

Electron irradiation of AlGaN /GaN and AlN /GaN heterojunctions

N. B. Smirnov, S. Pearton, A. Osinsky, 2008 .

Fast neutron irradiation effects in n-GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Neutron irradiation effects in AlGaN/GaN heterojunctions

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2006 .

Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2006 .

Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Stephen J. Pearton, A. V. Govorkov, A. V. Markov, 2005 .

Neutron irradiation effects in p‐GaN

N. B. Smirnov, S. Pearton, A. Osinsky, 2006 .

Deep centers in AlGaN-based light emitting diode structures

N. B. Smirnov, A. Polyakov, A. Govorkov, 1999 .

Effects of proton implantation on electrical and recombination properties of n-GaN

N. B. Smirnov, N. M. Shmidt, A. Polyakov, 2000 .

Electrical and optical properties of GaN films implanted with Mn and Co

J. Kim, F. Ren, S. Pearton, 2002 .

Changes in electrical and optical properties of p-AlGaN due to proton implantation

K. Baik, S. Pearton, J. Zavada, 2004 .

Persistent photoconductivity in AlGaN films Grown by mocvd

N. B. Smirnov, A. Polyakov, A. Govorkov, 1998 .

DEEP TRAPS SPECTRA IN UNDOPED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY UNDER VARIOUS CONDITIONS

N. B. Smirnov, Y. Makarov, In‐Hwan Lee, 2014 .

Electronic states in modulation doped p-AlGaN/GaN superlattices

Andrei Osinsky, Stephen J. Pearton, Peter P. Chow, 2001 .

Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices

S. Pearton, A. Osinsky, A. Dabiran, 2007 .

Electrical and optical properties of doped p-type GaN superlattices

S. Pearton, A. Osinsky, A. Dabiran, 2006 .

Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface

N. M. Shmidt, S. Pearton, A. Osinsky, 2003 .

New type of defects related to nonuniform distribution of compensating centers in p-GaN films

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2003 .

Hydrogen plasma passivation effects on properties of p-GaN

F. Ren, K. Baik, S. Pearton, 2003 .

Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

J. Chyi, J. Kim, F. Ren, 2003 .

Deep levels studies of AlGaN/GaN superlattices

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2003 .

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

V. A. Dravin, S. Pearton, A. Osinsky, 2002 .

Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

N. B. Smirnov, N. M. Shmidt, A. Polyakov, 2001 .

Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates

N. B. Smirnov, A. Polyakov, A. Govorkov, 2001 .

Metastable centers in AlGaN/AlN/GaN heterostructures

F. Ren, S. Pearton, W. Lim, 2012 .

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

N. B. Smirnov, Y. S. Cho, In‐Hwan Lee, 2010 .

Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 2009 .

Electrical properties and deep traps spectra of N-polar and Ga-polar AlGaN films grown by molecular beam epitaxy in a wide composition range

N. B. Smirnov, A. Polyakov, A. Govorkov, 2009 .

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy

S. Pearton, A. Osinsky, A. Dabiran, 2007 .

Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates

R. V. Ryzhuk, F. Ren, S. Pearton, 2013 .

Optical properties of GaAs1−x N x alloys grown by molecular beam epitaxy

N. B. Smirnov, J. Zavada, A. Polyakov, 2006 .

Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth

N. B. Smirnov, In‐Hwan Lee, A. Polyakov, 2013 .

Fermi level pinning in heavily neutron-irradiated GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2006 .

Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues

N. B. Smirnov, T. J. Bowles, V. Eremin, 2001 .

Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

S. Pearton, R. Wilson, A. Polyakov, 1995 .

Hydrogen passivation effects in InGaAlP and InGaP

S. Pearton, R. Wilson, A. Polyakov, 1994 .

Doping Efficiency and Deep Traps in MOCVD-Grown InGaAlP as Influenced by Stoichiometry and Hydrogen Passivation

A. Polyakov, A. Govorkov, N. Smirnov, 1994 .

Properties of Mn and Co implanted ZnO crystals

N. V. Pashkova, S. Pearton, D. Norton, 2003 .

Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

S. Pearton, In‐Hwan Lee, A. Dabiran, 2009 .

Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2009 .

Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells

S. Pearton, D. Norton, A. Polyakov, 2010 .

Persistent photoconductivity in MgZnO alloys

S. Pearton, D. Norton, A. Polyakov, 2009 .

Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition

S. Pearton, D. Norton, A. Polyakov, 2008 .

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

H. Amano, A. Polyakov, A. Markov, 2009 .

Properties of Mn- and Co-doped bulk ZnO crystals

S. Pearton, K. Ip, D. Norton, 2005 .

Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

R. M. Frazier, F. Ren, S. Pearton, 2002 .

Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2007 .

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

In‐Hwan Lee, T. Ko, A. Polyakov, 2010 .

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

N. B. Smirnov, K. Baik, In‐Hwan Lee, 2012 .

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

N. B. Smirnov, K. Baik, S. Pearton, 2011 .

Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2008 .

Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

S. Pearton, A. Dabiran, P. Chow, 2010 .

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

S. Pearton, A. Osinsky, A. Dabiran, 2008 .

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

Amir Dabiran, S. J. Pearton, Andrei Osinsky, 2007 .

Electrical and optical properties of Fe-doped semi-insulating GaN templates

S. Pearton, A. Polyakov, A. Govorkov, 2003 .

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

N. B. Smirnov, D. Look, A. Polyakov, 2002 .

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, 1998 .

Deep traps in high resistivity AlGaN films

N. B. Smirnov, A. Polyakov, A. Govorkov, 1998 .

Properties of Si donors and persistent photoconductivity in AlGaN

D. Greve, M. Skowronski, R. Wilson, 1998 .

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

D. Greve, M. Skowronski, R. Wilson, 1997 .

Properties of highly Cr-doped AlN

R. M. Frazier, S. Pearton, G. Thaler, 2004 .

Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

David P. Norton, John M. Zavada, Stephen J. Pearton, 2003 .

Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods

N. B. Smirnov, A. Polyakov, A. Markov, 2002 .

Study of GaAs as a material for solar neutrino detectors

N. B. Smirnov, T. J. Bowles, V. Eremin, 2000 .

Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, Y. Makarov, In‐Hwan Lee, 2014 .

Optical properties and defects in GaAsN and InGaAsN films and quantum well structures

N. B. Smirnov, Arif Khan, A. Polyakov, 2002 .

Lattice vibrational properties of ZnMgO grown by pulsed laser deposition

S. Pearton, D. Norton, A. Polyakov, 2007 .

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

N. B. Smirnov, Y. Makarov, In‐Hwan Lee, 2014 .

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

N. B. Smirnov, A. Polyakov, A. Markov, 2007 .

Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, S. S. Malakhov, S. Pearton, 2008 .

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

Stephen J. Pearton, A. Y. Polyakov, N. B. Smirnov, 2006 .

Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates

S. Pearton, A. Polyakov, A. Markov, 2006 .

Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy

N. B. Smirnov, D. Look, R. Molnar, 2002 .

Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy

N. B. Smirnov, D. Greve, M. Skowronski, 1998 .

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

R. V. Ryzhuk, In‐Hwan Lee, A. Govorkov, 2013 .

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

N. B. Smirnov, Y. Makarov, A. Polyakov, 2014 .

Electrical properties and radiation detector performance of free-standing bulk n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2012 .

Deep electron and hole traps in neutron transmutation doped n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

GaN as a detector of α-particles and neutrons

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, 2011, OPTO.

Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SiC by hydride vapor phase epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 2001 .

Electrical properties of undoped bulk ZnO substrates

Amir Dabiran, David P. Norton, Andrei Osinsky, 2006 .

Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe

David P. Norton, John M. Zavada, Stephen J. Pearton, 2004 .

Atomic hydrogen modification of polycrystalline silicon solar cells characteristics

A. Govorkov, A. Polyakov, A. Pakhomov, 1990 .

Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

N. B. Smirnov, V. S. Ermakov, F. Ren, 2012 .

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

N. B. Smirnov, D. Look, A. Polyakov, 2002 .

Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry

N. B. Smirnov, T. J. Bowles, A. Markov, 2007 .

High-dose Mn and Cr implantation into p-AlGaN films

R. M. Frazier, S. Pearton, G. Thaler, 2004 .

Electrical and optical properties of p-GaN films implanted with transition metal impurities

S. Pearton, A. Polyakov, A. Govorkov, 2004 .

Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction

John M. Zavada, Stephen J. Pearton, A. V. Govorkov, 2003 .

Proton implantation effects on electrical and luminescent properties of p-GaN

John M. Zavada, Stephen J. Pearton, A. V. Govorkov, 2003 .

Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

R. M. Frazier, J. Chyi, F. Ren, 2003 .

Electrical and optical properties of Cr and Fe implanted n-GaN

N. V. Pashkova, S. Pearton, C. Abernathy, 2003 .

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

David W. Greve, Marek Skowronski, A. Y. Polyakov, 1998 .

Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr

R. M. Frazier, G. Thaler, C. Abernathy, 2004 .

Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2009 .

Deep-level studies in GaN layers grown by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2008 .

Schottky Diodes on MOCVD Grown AlGaN Films.

N. B. Smirnov, D. Greve, M. Skowronski, 1998 .

Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers

N. B. Smirnov, F. Ren, S. Pearton, 2000 .

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

F. Ren, S. Pearton, R. Mehandru, 2001 .

Electrical properties and deep levels in bulk solution grown GaAs crystal

N. B. Smirnov, T. J. Bowles, V. Eremin, 2002 .

Band offsets in heterojunctions of InGaAsSb/AlGaAsSb

A. G. Milnes, A. V. Govorkov, A. Milnes, 1995 .

Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers

N. B. Smirnov, F. Ren, S. Pearton, 2000 .

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

N. B. Smirnov, V. N. Sokolov, In‐Hwan Lee, 2014 .

Ultraviolet photodetectors based on GaN and AlxGa1-xN epitaxial layers

N. B. Smirnov, A. V. Govorkov, E. E. Zavarin, 2000, Other Conferences.

Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask

V. B. Mityukhlyaev, N. B. Smirnov, S. S. Malakhov, 2009 .

Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions

Karpov, F. Ren, S. Pearton, 2012 .

Electrical and optical properties of GaCrN films grown by molecular beam epitaxy

R. M. Frazier, S. Pearton, G. Thaler, 2005 .

Properties of Fe-doped semi-insulating GaN structures

Stephen J. Pearton, A. V. Govorkov, S. Pearton, 2004 .

EBIC investigations of defect distribution in ELOG GaN films

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2009 .

EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

N. B. Smirnov, A. Polyakov, A. Govorkov, 2008 .

EBIC and CL studies of ELOG GaN films

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2009 .

Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth

N. B. Smirnov, S. Pearton, Cheul‐Ro Lee, 2008 .

Properties and annealing stability of Fe doped semi-insulating GaN structures

John M. Zavada, Stephen J. Pearton, A. V. Govorkov, 2005 .

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Properties of nanopillar structures prepared by dry etching of undoped GaN grown by maskless epitaxial overgrowth

N. B. Smirnov, V. N. Sokolov, In‐Hwan Lee, 2013 .

Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

N. B. Smirnov, In‐Hwan Lee, A. Polyakov, 2012 .

Neutron doping effects in epitaxially laterally overgrown n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films

H. Amano, A. Polyakov, A. Markov, 2009 .

The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD

A. Milnes, A. Polyakov, A. Govorkov, 1996 .

Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques

A. Polyakov, A. Markov, A. Govorkov, 2004 .

Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE

N. B. Smirnov, D. Greve, M. Skowronski, 1996 .

Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 1999 .

Optical and electrical properties of AlCrN films grown by molecular beam epitaxy

R. M. Frazier, S. Pearton, G. Thaler, 2004 .

Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes

R. M. Frazier, C. R. Abernathy, J. Chyi, 2004 .

Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy

S. Pearton, A. Osinsky, B. Hertog, 2007 .