P. Werner

M. A. Putyato, Yu. G. Musikhin, A. Suvorova, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

A. Suvorova, P. Werner, N. Bert, 2000 .

ENHANCED PRECIPITATION OF EXCESS AS ON ANTIMONY DELTA LAYERS IN LOW-TEMPERATURE-GROWN GAAS

A. Suvorova, P. Werner, N. Bert, 1999 .

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, P. Werner, N. Bert, 1998 .

LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

Yu. G. Musikhin, A. Suvorova, P. Werner, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

M. A. Putyato, Yu. G. Musikhin, P. Werner, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

N. Ledentsov, Z. Alferov, U. Gösele, 1995 .

Oxide layer dissolution in Si/SiOx/Si wafer bonded structures

U. Gösele, P. Werner, E. Pippel, 2009 .

Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

N. K. Polyakov, N. Ledentsov, V. Ustinov, 2000 .

TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers

U. Gösele, P. Werner, N. Zakharov, 2005 .

Fabrication of High-Quality InSb Nanowire Arrays by Chemical Beam Epitaxy

P. Werner, V. Schmidt, J. V. Wittemann, 2011 .

Near-ideal InAs QDs on GaAs substrates for 1.3–1.5m laser applications

A. R. Kovsh, Y. Shernyakov, A. Zhukov, 2004 .

Growth Phenomena of Quantum Dot Structures in the Ingaas System Investigated by Tem Techniques

P. Werner, 1999 .

MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots

S. Mikhrin, N. Ledentsov, Y. Shernyakov, 1999 .

Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

V. Ustinov, P. Werner, D. Bimberg, 1997 .

High resolution x-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

V. Ustinov, P. Werner, D. Bimberg, 1997 .

Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

V. Ustinov, P. Werner, D. Bimberg, 1997 .

Intrinsic stability of magnetic anti-skyrmions in the tetragonal inverse Heusler compound Mn1.4Pt0.9Pd0.1Sn

C. Felser, P. Werner, S. Parkin, 2019, Nature Communications.

Crystallization Behaviour of Amorphous Si 0.5 Ge 0.5 Films Observed by Positron Annihilation

P. Werner, W. Beyer, F. Edelman, 1999 .

Crystallization of a-Si1−xGex: decomposition and modulated structure formation features

S. Iyer, P. Werner, J. Heydenreich, 1995 .

Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100)

V. Ustinov, P. Werner, V. Dubrovskii, 2004 .

Precise control of size and density of self-assembled Ge dot on Si(1 0 0) by carbon-induced strain-engineering

U. Gösele, P. Werner, Y. Wakayama, 2003 .

Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films

G. Eisenstein, P. Werner, V. Mikhelashvili, 2004 .

Defects in GaAs bulk crystals and multi-layers caused by In diffusion

H. Sohn, Z. Liliental-Weber, E. Weber, 1993 .

SUPERCONDUCTIVITY IN INDIUM DIFFUSED GaAs

H. Sohn, E. Weber, P. Werner, 1992 .

Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection"

John E. Bowers, Arthur C. Gossard, Dieter Bimberg, 1996 .

Structure of CdZnTe films on glass

Y. Nemirovsky, S. Stolyarova, P. Werner, 2008 .

Thermoelectric signatures of the electron-phonon fluid in PtSn4

C. Felser, Yan Sun, P. Werner, 2018, 1802.09468.

Characterization of semi-insulating InP: Cu

E. Weber, P. Werner, R. Leon, 1992, Proceedings of the 7th Conference on Semi-insulating III-V Materials,.

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

D. N. Lobanov, Z. F. Krasilnik, P. Werner, 2012 .

Effects of Ad-atom Diffusivity Throughout Sb-Mediated Formation of Ge/Si Nanoislands

A. Suvorova, P. Werner, A. Tonkikh, 2012 .

Inas Nanostructures in a Silicon Matrix: Growth and Properties

N. K. Polyakov, N. Ledentsov, V. Ustinov, 1999 .

Growth and Properties of Silicon Nanowires for Low-Dimensional Devices

P. Werner, 2007 .

v Accelerated Online Publication LASERS, OPTICS, AND OPTOELECTRONICS 2971 Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures

N. Ledentsov, W. Barnes, L. Lanco, 2004 .

Antiferromagnetic structure and electronic properties of BaCr2As2 and BaCrFeAs2

G. Fecher, C. Felser, P. Werner, 2017, 1701.03127.

A charge-density-wave topological semimetal

C. Felser, Yan Sun, Yulin Chen, 2021 .

Superconductivity in Weyl semimetal candidate MoTe2

C. Felser, Yan Sun, Binghai Yan, 2015, Nature Communications.

Superconductivity in Weyl Semimetal Candidate MoTe

C. Felser, Yan Sun, Binghai Yan, 2016 .

Producing ZnFe2O4 thin films from ZnO/FeO multilayers

F. Golmar, P. Werner, W. Hergert, 2017 .

Defect Structure of ZnSe Crystals Investigated by Electron Microscopy

P. Werner, E. Mizera, M. Sundberg, 1984, September 16, 1984.

New high pressure rare earth tantalates RExTa2O5+1.5x (RE=La, Eu, Yb)

P. Werner, N. Zakharov, E. Nikishina, 2013 .

Structural Studies of Calcium Tungsten Bronzes, CaxWO3, Formed at High Pressure

P. Werner, N. Zakharov, V. Filonenko, 2000 .

Stress-mediated formation of nanocrystalline calcitic microlens arrays

M. Burghammer, P. Fratzl, P. Werner, 2015 .

A hydrated crystalline calcium carbonate phase: Calcium carbonate hemihydrate

S. Weiner, J. Mahamid, P. Fratzl, 2019, Science.

Misfit accommodation mechanisms at moving reaction fronts during topotaxial spinel-forming thin-film solid-state reactions : a high-resolution transmission electron microscopy study of five spinels of different misfits

P. Werner, H. Sieber, D. Hess, 1997 .

Structure, Morphology, and Misfit Accommodation Mechanism of MgIn2O4 Films Grown on MgO(001) Substrates by Solid State Reaction

D. Hesse, R. Hillebrand, P. Werner, 1994 .

Eshelby Twist as a Possible Source of Lattice Rotation in a Perfectly Ordered Protein/Silica Structure Grown by a Simple Organism.

P. Fratzl, P. Werner, E. Zolotoyabko, 2015, Small.

Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

R. Mokso, H. Blumtritt, P. Werner, 2012, IEEE Journal of Photovoltaics.

Crystallization of amorphous hydrogenated Si1−xGex films

M. Reiche, P. Werner, W. Beyer, 1995 .

HREM investigations of the NiSi2/Si{111} interfaces bounding A-type NiSi2 islands on Si(111)†

D. Hesse, R. Hillebrand, P. Werner, 1989 .

Tunable Magnetic Antiskyrmion Size and Helical Period from Nanometers to Micrometers in a D2d Heusler Compound

C. Felser, P. Werner, S. Parkin, 2020, Advanced materials.

Observation of Magnetic Antiskyrmions in the Low Magnetization Ferrimagnet Mn2Rh0.95Ir0.05Sn

C. Felser, P. Werner, S. Parkin, 2019, Nano letters.

Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films

Benedikt Ernst, C. Felser, P. Werner, 2019, Physical Review Materials.

Weyl Semimetals as Hydrogen Evolution Catalysts

Claudia Felser, Binghai Yan, Marcus Schmidt, 2017, Advanced materials.

Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the noncollinear antiferromagnet Mn3Ir

C. Felser, C. Back, P. Werner, 2019, Applied Physics Letters.

Localization and Characterization of Ferritin in Demospongiae: A Possible Role on Spiculogenesis

P. Werner, S. Wiese, M. Nawaz Tahir, 2014, Marine drugs.

Extremely high conductivity observed in the triple point topological metal MoP

Sarah J. Watzman, C. Felser, Yan Sun, 2017, Nature Communications.

Noncollinear antiferromagnetic Mn3Sn films

C. Felser, P. Werner, S. Parkin, 2018 .

Pressure-induced superconductivity and topological quantum phase transitions in a quasi-one-dimensional topological insulator: Bi4I4

C. Felser, Binghai Yan, Yanjun Qi, 2018, npj Quantum Materials.

A Charge-Density-Wave Weyl Semimetal

C. Felser, Yan Sun, Yulin Chen, 2019, 1909.04037.

Extremely high conductivity observed in the unconventional triple point fermion material MoP

C. Felser, Yan Sun, Binghai Yan, 2017 .

Local stresses induced by nanoscale As-Sb clusters in GaAs matrix

A. Claverie, A. Suvorova, P. Werner, 2002 .

Enhanced As-Sb intermixing of GaSb monolayer superlattices in low- temperature grown GaAs

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2001 .

Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

E. Haller, A. Larsen, J. L. Hansen, 2008 .

Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix

Peter Werner, A. Suvorova, P. Werner, 2014 .

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

A. Claverie, P. Werner, N. Bert, 2007 .

In–Ga intermixing in low-temperature grown GaAs delta doped with In

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 1999 .

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold

P. Werner, V. Aristov, J. Heydenreich, 1987 .

Structural transition of Ge dots induced by submonolayer carbon on Ge wetting layer

U. Gösele, P. Werner, Y. Wakayama, 2000 .

Effect of submonolayer carbon on nanoscale Ge dot growth on Si(001) substrates

P. Werner, Y. Wakayama, L. Sokolov, 2001 .

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy.

Bodo Fuhrmann, Peter Werner, Ulrich Gösele, 2005, Nano letters.

Model for the Mass Transport during Metal-Assisted Chemical Etching with Contiguous Metal Films As Catalysts

Hartmut S. Leipner, Nadine Geyer, Bodo Fuhrmann, 2012 .

Formation of Semiconductor Quantum Dots in the Subcritical Thickness Range

Yu. G. Musikhin, V. Ustinov, P. Werner, 2007 .

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

N. K. Polyakov, Yu. G. Musikhin, V. Ustinov, 2004 .

Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide

U. Gösele, R. Scholz, P. Werner, 2000 .

Sulfur diffusion and the interstitial contribution to arsenic self‐diffusion in GaAs

U. Gösele, P. Werner, T. Tan, 1995 .

Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion

U. Gösele, P. Werner, H. Leipner, 1999 .

Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

O. Breitenstein, U. Gösele, P. Werner, 1997 .

On the formation of Si nanowires by molecular beam epitaxy

U. Gösele, P. Werner, N. Zakharov, 2006, International Journal of Materials Research.

On the formation of Si nanowires by molecular beam epitaxy

U. Gösele, P. Werner, N. Zakharov, 2006 .

Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs

M. A. Putyato, A. Claverie, P. Werner, 2002, 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..

Si-CdSSe core/shell nanowires with continuously tunable light emission.

U. Gösele, M. Zacharias, P. Werner, 2008, Nano letters.

Copper diffusion in dislocation-rich gallium arsenide

P. Werner, F. Syrowatka, J. Schreiber, 1999 .

Study of As self-diffusion in GaAs using sulfur as a tracer

U. Gösele, P. Werner, R. Scholz, 2001 .

Ex post manipulation of barriers in InGaAs tunnel injection devices

J. Tomm, P. Werner, B. Fuhrmann, 2015 .

Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination

U. Gösele, P. Werner, W. Skorupa, 2001 .

Characterization of Structural Changes Associated with Doping Silicon Nanowires by Ion Implantation

R. Scholz, P. Werner, P. Kanungo, 2011 .

Reply to “Comment on ‘Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon’ ” [Appl. Phys. Lett. 77, 151 (2000)]

U. Gösele, P. Werner, W. Skorupa, 2000 .

Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system

V. Ustinov, P. Werner, V. Dubrovskii, 2003 .

Self-assembled Ge dots: Growth, characterization, ordering, and applications

Gerhard Abstreiter, C. Engel, Aa Anton Darhuber, 1998 .

Carbon diffusion in silicon

U. Gösele, H. Gossmann, D. Jacobson, 1998 .

Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

Nikolai N. Ledentsov, Vitaly A. Shchukin, Sergei V. Zaitsev, 1996 .

The Structure of Spinel/Oxide Reaction Fronts During Spinel-Forming Solid State Reactions

S. Senz, D. Hesse, P. Werner, 1994 .

The Interface Structure during Solid State Reactions and Its Influence on Reaction Kinetics and Reaction Mechanism

D. Hesse, P. Werner, 1996 .

Pressure-driven metal-insulator transition in hematite from dynamical mean-field theory.

V. Anisimov, P. Werner, J. Kuneš, 2008, Physical review letters.

CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1998 .

Influence of nanoscale order–disorder transitions on the magnetic properties of Heusler compounds for spintronics

G. Fecher, C. Felser, J. Fischer, 2017 .

Adaptive modulation in the Ni2Mn1.4In0.6 magnetic shape-memory Heusler alloy

C. Felser, V. Petříček, P. Werner, 2016, Physical Review B.

Adaptive modulation in the Ni 2 Mn 1 . 4 In 0 . 6 magnetic shape-memory Heusler alloy

C. Felser, V. Petříček, P. Werner, 2018 .

Epitaxy of carbon-rich silicon with MBE

U. Gösele, P. Werner, G. Gerth, 2002 .

Electron Microscopy of As Supersaturated Silicon

S. Solmi, P. Werner, A. Armigliato, 1986 .

Transient carrier transfer in tunnel injection structures

G. E. Cirlin, Jens W. Tomm, U. Gösele, 2008 .

QD lasers: physics and applications

Matthias Kuntz, Friedhelm Hopfer, P. Werner, 2005, SPIE/OSA/IEEE Asia Communications and Photonics.

Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

V. Ustinov, V. Shalygin, L. E. Vorob’ev, 2005 .

Optical properties of InAs quantum dots in a Si matrix

I. P. Soshnikov, N. Ledentsov, A. Zhukov, 1999 .

High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

Mikhail V. Maximov, A. R. Kovsh, D. Bimberg, 1998 .

Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots

A. Sofronov, P. Werner, D. Firsov, 2015 .

Sb-modified growth of stacked Ge/Si(100) quantum dots

P. Werner, E. Pippel, N. Zakharov, 2011 .

Ge/Si(100) quantum dots grown via a thin Sb layer

P. Werner, V. Talalaev, A. Tonkikh, 2010 .

Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

J. Tomm, P. Werner, L. Asryan, 2012, Semiconductors.

Electric Field Control of Phase Transition and Tunable Resistive Switching in SrFeO2.5.

F. Pan, C. Song, M. Fayaz, 2019, ACS applied materials & interfaces.

Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters

A. R. Kovsh, N. N. Ledentsov, V. A. Haisler, 2007, SPIE OPTO.

Heteroepitaxial growth of GaSb nanotrees with an ultra-low reflectivity in a broad spectral range.

Chenglin Yan, Keya Zhou, Volker Schmidt, 2012, Nano letters.

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition

Nikolai N. Ledentsov, Mikhail V. Maximov, Igor L. Krestnikov, 1997 .

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

P. Werner, S. Kalem, Ö. Arthursson, 2013, 1512.07994.

Optical response of Si/Ge superlattices with embedded Ge dots

P. Werner, S. Kalem, O. Arthursson, 2012, 2012 Photonics Global Conference (PGC).

Extremely high conductivity observed in the triple point topological metal MoP

C. Felser, Yan Sun, Binghai Yan, 2017, Nature Communications.

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

P. Werner, R. Krause-Rehberg, A. Berger, 2015, Nanotechnology.

In fl uence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

P. Werner, R. Krause-Rehberg, A. Berger, 2015 .

Ag-mediated charge transport during metal-assisted chemical etching of silicon nanowires.

P. Werner, B. Fuhrmann, N. Geyer, 2013, ACS applied materials & interfaces.

Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.

Zhipeng Huang, M. Reiche, U. Gösele, 2009, Nano letters.

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

H. Blumtritt, P. Werner, B. Senkovskiy, 2015, Scientific Reports.

Interface structure and Schottky barrier height of buried CoSi2/Si(001) layers

P. Werner, W. Jäger, A. Schüppen, 1993 .

Three‐Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

U. Gösele, P. Werner, P. Kanungo, 2010, Advanced materials.

Chapter 10 – Miniband-related 1.4–1.8 μm Luminescence of Ge/Si Quantum Dot Superlattices

G. E. Cirlin, T. Elsaesser, J. Tomm, 2008 .

G. E. Cirlin, T. Elsaesser, J. Tomm, 2006, Nanoscale Research Letters.

The contribution of vacancies to carbon out-diffusion in silicon

U. Gösele, R. Scholz, P. Werner, 1999 .

Black silicon with high density and high aspect ratio nanowhiskers

P. Werner, M. Hagberg, V. Talalaev, 2011, Nanotechnology.

Lattice imaging study of in-depth disordering of Si-implanted GaAs

P. Werner, H. Bartsch, G. Vitali, 1988 .

Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

P. Werner, J. Schilling, N. Zakharov, 2015 .

Aperiodic SiSn/Si multilayers for thermoelectric applications

P. Werner, N. Zakharov, H. Leipner, 2014 .

Metallic impurity gettering to defects remaining in the RP/2 region of MeV-ion implanted and annealed silicon

P. Werner, W. Skorupa, G. Brauer, 2000 .

Evidence for interstitial-type defects in the Rp/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure

M. Behar, P. Werner, P. Fichtner, 2000 .

Ripening of self-organized InAs quantum dots

P. Werner, D. Bimberg, R. Heitz, 2004 .

Self-Diffusion as A Limiting Factor of a-SiGe Crystallization

P. Zaumseil, P. Werner, W. Beyer, 1997 .

Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy

U. Gösele, N. D. Zakharov, P. Werner, 2009, Microelectron. J..

The SERS and TERS effects obtained by gold droplets on top of Si nanowires.

J. Michler, P. Werner, A. Milenin, 2007, Nano letters.

Gold-enhanced oxidation of silicon nanowires

U. Gösele, P. Werner, G. Gerth, 2007 .

Si/Ge nanostructures for optoelectronics applications

V. Ustinov, P. Werner, N. Ledentsov, 2004 .

Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

M. Reiche, U. Gösele, H. Blumtritt, 2010 .

A charge-density-wave topological semimetal

C. Felser, Yan Sun, Yang Zhang, 2021, Nature Physics.

Photoluminescence of self-assembled Ge islands grown on Si by MBE at low temperatures

V. A. Kurbatov, T. N. Zavaritskaya, N. N. Sibeldin, 2003 .

Correlation of ordering formation and surface structure in (GaIn)P using modulated MOVPE

P. Werner, Jiechao Jiang, W. Stolz, 1997 .

Recombination at Lomer Dislocations in Multicrystalline Silicon for Solar Cells

Otwin Breitenstein, Peter Werner, Jan Bauer, 2016, IEEE Journal of Photovoltaics.

Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

D. Bimberg, Marius Grundmann, Juergen Christen, 1997 .

Crystal lattice defects in MBE grown Si layers highly doped with Er

P. Werner, V. Vdovin, D. Denisov, 2008 .

THE EFFECT OF CARBON/SELF-INTERSTITIAL CLUSTERS ON CARBON DIFFUSION IN SILICON MODELED BY KINETIC MONTE CARLO SIMULATIONS

H. Gossmann, M. Jaraíz, G. Gilmer, 2000 .

Diffusion Engineering by Carbon in Silicon

P. Werner, U. Goesele, R. Scholz, 2000 .

Point Defects, Diffusion and Gettering in Silicon

U. Gösele, P. Werner, T. Tan, 1997 .

Investigation of CxSi defects in C implanted silicon by transmission electron microscopy

P. Werner, W. Skorupa, S. Eichler, 1997 .

Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

O. Brandt, M. Ramsteiner, P. Werner, 2018, Nano Research.

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

A. Gruverman, D. J. Kim, M. Alexe, 2012 .

Structure and morphology of the reaction fronts during the formation of MgAl2O4 thin films by solid state reaction between R-cut sapphire substrates and MgO films

S. Senz, D. Hesse, P. Werner, 1995 .

Computer simulation of high resolution electron microscopy images of small precipitates in P‐supersaturated silicon

R. Hillebrand, P. Werner, A. Armigliato, 1985 .

High resolution electron microscopy observations of precipitates in p-supersaturated silicon

P. Werner, A. Armigliato, 1984 .

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

Nikolai N. Ledentsov, Friedhelm Hopfer, Alex Mutig, 2006, Workshop on Optical Components for Broadband Communication.

Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

P. Werner, N. Zakharov, V. Talalaev, 2003 .

Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

V. Rangel-Kuoppa, P. Werner, W. Jantsch, 2013, Science and technology of advanced materials.

Infrared photoluminescence from Si/Ge nanowire grown Si wafers

P. Werner, V. Talalaev, S. Kalem, 2012, 2012 Photonics Global Conference (PGC).

Room temperature electroluminescence from multilayer GeSi heterostructures

P. Werner, V. Talalaev, G. Cirlin, 2006 .

The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots

P. Werner, V. Dubrovskii, V. Talalaev, 2006 .

Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots

V. Ustinov, P. Werner, V. Dubrovskii, 2005 .

1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

D. Bimberg, Roman Sellin, T. Kettler, 2004 .

Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

D. Bimberg, Roman Sellin, T. Kettler, 2003 .

Carrier profiling of individual Si nanowires by scanning spreading resistance microscopy.

U. Gösele, P. Werner, P. Kanungo, 2010, Nano letters.

Dislocation Structures in Si:C Films : Generating "Plateau-Like" Surface Defects ?

M. Werner, P. Werner, G. Gerth, 2000 .

Measurement of the bending strength of vapor-liquid-solid grown silicon nanowires.

Christophe Ballif, Samuel Hoffmann, Ivo Utke, 2006, Nano letters.

The effect of stress and kinetic reaction barriers on the reactive growth of nanometer-sized epitaxial NiSi/sub 2/ islands on Si(111)

D. Hesse, P. Werner, R. Mattheis, 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).

Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

J. Tomm, P. Werner, L. Asryan, 2012 .

Sb mediated formation of Ge/Si quantum dots: Growth and properties

P. Werner, B. Fuhrmann, N. Zakharov, 2012 .

Lateral photoconductivity in structures with Ge/Si quantum dots

G. Schmidt, V. Shalygin, A. Sofronov, 2013 .

Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair

P. N. Racec, J. Tomm, P. Werner, 2014 .

V. Rangel-Kuoppa, P. Werner, W. Jantsch, 2013 .

Tunnel injection emitter structures with barriers comprising nanobridges

J. Tomm, P. Werner, N. Zakharov, 2011 .

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

T. Elsaesser, J. Tomm, U. Gösele, 2010 .

Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field

G. E. Cirlin, V. Ustinov, J. Tomm, 2006 .

Electron and hole deep levels related to Sb-mediated Ge quantum dots embedded in n-type Si, studied by deep level transient spectroscopy

V. Rangel-Kuoppa, P. Werner, W. Jantsch, 2013 .

ELECTRON ESCAPE FROM INAS QUANTUM DOTS

Dieter Bimberg, Marius Grundmann, Oliver Stier, 1999 .

Effect of growth conditions on InAs nanoislands formation on Si(100) surface

N. K. Polyakov, N. Ledentsov, Z. Alferov, 1999 .

Identification of Small Defects in Silicon

P. Werner, M. Pasemann, 1979 .

Study of multilayer structures with InAs nanoobjects in a silicon matrix

N. K. Polyakov, P. Werner, N. Ledentsov, 2000 .

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

Quantum dot insertions in VCSELs from 840 to 1300 nm: growth, characterization, and device performance

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, 2009, OPTO.

Decomposition and modulated structure formation during amorphous Si1 − xGex crystallization

P. Werner, J. Heydenreich, F. Edelman, 1995 .

Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS2/Si(111) interface

D. Hesse, P. Werner, J. Heydenreich, 1993 .

Point defect configurations of supersaturated Au atoms inside Si nanowires.

Dhananjay Kumar, Sang Ho Oh, Peter Werner, 2008, Nano letters.

Stoichiometry Control in Molecular Beam Deposited Nanocrystalline SnO 2 and TiO 2 Thin Films

P. Werner, H. Hahn, F. Edelman, 1999 .

Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

U. Gösele, P. Werner, N. Zakharov, 2006 .

New mode of vapor-liquid-solid nanowire growth.

N. V. Sibirev, P. Werner, V. Dubrovskii, 2011, Nano letters.

Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

N. V. Sibirev, V. Ustinov, P. Werner, 2005 .

Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth.

A. Menzel, M. Zacharias, Firat Güder, 2015, Nanoscale.

InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1995 .

Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

O. Breitenstein, J. Bauer, P. Werner, 2008 .

Spontaneous Ordering in Thin Polycrystalline Cd1–xZnxTe Films during Annealing

Y. Nemirovsky, S. Stolyarova, P. Werner, 2002 .

Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

O. Breitenstein, J. Bauer, U. Gösele, 2007 .

Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

J. Klem, J. Tsao, Z. Liliental-Weber, 1993 .

Structure of UMo4O14 oxide

R. Hillebrand, P. Werner, E. Pippel, 2012 .

Spectroscopy of exciton states of InAs quantum molecules

N. K. Polyakov, V. Ustinov, J. Tomm, 2004 .

Control of structure, size and density of Ge dot on Si (1 0 0) through multistep procedure

U. Gösele, P. Werner, Y. Wakayama, 2001 .

The generation of an optimised SiGe superlattice: growth, structure and optical properties

P. Werner, N. Zakharov, V. Talalaev, 2018 .

Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

V. Rangel-Kuoppa, P. Werner, C. Eisenschmidt, 2016, Nanotechnology.

Transient spectroscopy of InAs quantum dot molecules

J. Tomm, P. Werner, N. Zakharov, 2004 .

G. E. Cirlin, J. Tomm, A. Sokolov, 2007 .

Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate

M. Maksimov, Yu. G. Musikhin, A. Zhukov, 2004 .

Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

P. Werner, F. Dultsev, T. Gavrilova, 2008, Nanotechnology.

Ordering of nanostructures in a Si/Ge0.3Si0.7/Ge system during molecular beam epitaxy

P. Werner, G. Cirlin, L. Sokolov, 2002 .

Structure of PECVD Si:H films for solar cell applications

B. Rech, P. Werner, T. Roschek, 2003 .

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

D. Hoehl, P. Werner, J. Heydenreich, 1986 .

Self‐organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

D. Bimberg, Marius Grundmann, Alois Krost, 1996 .

Direct imaging of structural changes induced by ionic liquid gating leading to engineered three-dimensional meso-structures

P. Werner, S. Parkin, Tianping Ma, 2018, Nature Communications.

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 1999 .

Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Diffuse x-ray scattering from InGaAs/GaAs quantum dots

P. Werner, D. Bimberg, M. Hanke, 2003 .

Temperature dependent luminescence from quantum dot arrays: phonon‐assisted line broadening versus carrier escape‐induced narrowing

G. E. Cirlin, J. Tomm, P. Werner, 2010 .

Growth and properties of self‐catalyzed (In,Mn)As nanowires

P. Werner, A. Savin, G. Cirlin, 2016 .

Formation of coherent superdots using metal‐organic chemical vapor deposition

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 1996 .

Acceptor deactivation in individual silicon nanowires: From thick to ultrathin

P. Werner, W. Skorupa, X. Ou, 2011 .

Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.

N. Ledentsov, V. Ustinov, N. Cherkashin, 2001 .

Stability and transport properties of microcrystalline Si1−xGex films

H. Osten, P. Zaumseil, P. Werner, 1999 .

Publisher Correction: A charge-density-wave topological semimetal

C. Felser, Yan Sun, Yulin Chen, 2021 .

Gold-enhanced oxidation of MBE-grown silicon nanowires

U. Gösele, N. D. Zakharov, Peter Werner, 2008 .

Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment

P. Werner, V. Talalaev, S. Kalem, 2013, 1512.07995.

Quantum Dot Growth in the Si-Ge-C System Through Multi-Step Procedure

P. Werner, Y. Wakayama, L. Sokolov, 2000 .

Nanocrystalline SiGe films: structure and properties

P. Werner, F. Edelman, Y. Komem, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

V. Shalygin, A. Sofronov, P. Werner, 2012 .

Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates

J. Klem, J. Tsao, Z. Liliental-Weber, 1992 .

Lateral photoconductivity in structures with Ge/Si quantum dots

G. Schmidt, V. Shalygin, A. Sofronov, 2013, Semiconductors (Woodbury, N.Y.).

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

Egorov, Zhukov, Alferov, 1996, Physical review. B, Condensed matter.

Fivefold Multiply-Twinned Crystallites in Vapour-Deposited Amorphous Thin Films of Germanium Studied by HREM

P. Werner, H. Hofmeister, T. Junghanns, 1992 .

Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices

M. Zacharias, P. Werner, N. Zakharov, 2015 .

Silicon nanocrystals in SiNx/SiO2 hetero-superlattices: The loss of size control after thermal annealing

M. Zacharias, P. Werner, L. López-Conesa, 2014 .

Weyl Semimetals as Hydrogen Evolution Catalysts

C. Felser, Yan Sun, Binghai Yan, 2017, Advanced materials.

Metal‐Assisted Chemical Etching of Silicon

Nadine Geyer, Ulrich Goesele, Zhipeng Huang, 2011 .

Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching

P. Werner, B. Fuhrmann, N. Geyer, 2012 .