K. Lew

发表

Diameter‐Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes

Joan M. Redwing, Suzanne E. Mohney, Kok-Keong Lew, 2005 .

Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers

K. Lew, R. Myers-Ward, C. Eddy, 2010 .

On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

J. Butler, T. Feygelson, K. Hobart, 2010 .

Measuring the specific contact resistance of contacts to semiconductor nanowires

Theresa S. Mayer, Joan M. Redwing, Suzanne E. Mohney, 2005 .

Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

T. Mayer, K. Lew, S. Mohney, 2007, 2007 International Semiconductor Device Research Symposium.

Bicrystalline Silicon Nanowires

Joan M. Redwing, Kok-Keong Lew, A. H. Carim, 2001 .

Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor

K. Lew, R. Myers-Ward, C. Eddy, 2007 .

Raman Scattering from Si1-xGex Alloy Nanowires

P. Eklund, K. Lew, E. Dickey, 2008 .

Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates

Joan M. Redwing, Kok-Keong Lew, K. Lew, 2003 .

Effect of growth conditions on the composition and structure of Si_1−xGe_x nanowires grown by vapor–liquid–solid growth

K. Lew, J. Redwing, E. Dickey, 2006 .

Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires

Elizabeth C. Dickey, Joan M. Redwing, Ling Pan, 2003 .

4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm

Xiaobin Xin, Kok-Keong Lew, J.H. Zhao, 2008, IEEE Transactions on Electron Devices.

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2008 .

4 H-SiC Single Photon Avalanche Diode for 280 nm UV Applications

Jian H. Zhao, P. Alexandrov, X. Xin, 2007 .

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

M. Ancona, K. Hobart, K. Lew, 2011, IEEE Transactions on Electron Devices.

Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2009 .

High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl

R. M. Ward, Jie Zhang, D. Sheridan, 2008 .

Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth

K. Lew, J. Redwing, Xiaotian Zhang, 2007, Microscopy and Microanalysis.

Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices

T. Mayer, K. Lew, S. Mohney, 2006, 2006 64th Device Research Conference.

Top-gated field effect devices using oxidized silicon nanowires

T. Mayer, K. Lew, J. Redwing, 2005, 63rd Device Research Conference Digest, 2005. DRC '05..

Stranski-Krastanow growth of germanium on silicon nanowires.

K. Lew, J. Redwing, E. Dickey, 2005, Nano letters.

Recombination processes controlling the carrier lifetime in n-4H-SiC epilayers with low Z1/2 concentrations

P. Klein, K. Lew, R. Myers-Ward, 2010 .

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.

K. Lew, J. Redwing, E. Dickey, 2007, Nano letters.

Bottom-up assembly of large-area nanowire resonator arrays.

Theresa S. Mayer, Joan M. Redwing, Thomas J. Morrow, 2008, Nature nanotechnology.

X-ray diffraction study of crystal plane distortion in silicon carbide substrates

K. Lew, C. Eddy, D. Gaskill, 2006 .

Silicon nanowire array photelectrochemical cells.

Kok-Keong Lew, Adrian P Goodey, Thomas E Mallouk, 2007, Journal of the American Chemical Society.

Oxidation of silicon nanowires

Suzanne E. Mohney, Daniel Shir, K. Lew, 2006 .

Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Structural and electrical properties of trimethylboron-doped silicon nanowires

Elizabeth C. Dickey, Theresa S. Mayer, Joan M. Redwing, 2004 .

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

J. Freitas, P. Klein, K. Lew, 2010 .

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

M. Skowronski, K. Lew, R. Myers-Ward, 2008 .

Effect of diborane on the microstructure of boron-doped silicon nanowires

Elizabeth C. Dickey, Joan M. Redwing, Ling Pan, 2005 .

Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8

Liang Wang, K. Lew, R. Myers-Ward, 2009 .

Oxidation of silicon nanowires for top-gated field effect transistors

Sarah M. Eichfeld, Theresa S. Mayer, Joan M. Redwing, 2008 .

Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires.

K. Lew, J. Redwing, E. Dickey, 2008, Nano letters.

Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires.

Ling Pan, Kok-Keong Lew, T. Mayer, 2005, Nano letters.

Template-directed vapor–liquid–solid growth of silicon nanowires

Joan M. Redwing, Benjamin R. Martin, Kok-Keong Lew, 2002 .

Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates

Liang Wang, P. Klein, K. Lew, 2010 .

Etch rates for Si-face 4H-SiC using H2 and a C3H8 partial pressure

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires

Elizabeth C. Dickey, Joan M. Redwing, Ling Pan, 2003 .

Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging

K. Lew, R. Myers-Ward, C. Eddy, 2008 .

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

P. Klein, K. Lew, R. Myers-Ward, 2008 .

Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires

K. Lew, S. Mohney, J. Redwing, 2003 .

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

P. Klein, K. Lew, R. Myers-Ward, 2010 .

H2 etching and epitaxial growth on 4H-SiC boule domes

K. Lew, R. Myers-Ward, C. Eddy, 2007, 2007 International Semiconductor Device Research Symposium.

Silicon nanowire array photelectrochemical cells.

T. Mallouk, A. Goodey, K. Lew, 2007, Journal of the American Chemical Society.