C. Bougerol

发表

Fe and Co Nanowires and Nanotubes Synthesized by Template Electrodeposition A HRTEM and EELS Study

J. Verbeeck, O. Lebedev, G. Tendeloo, 2003 .

GaN/AlGaN intersubband optoelectronic devices

F. Julien, P. Crozat, A. Vardi, 2009 .

Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

J. Eymery, X. Dai, M. Tchernycheva, 2016, ACS applied materials & interfaces.

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

C. Bougerol, B. Haas, J. Rouviere, 2015 .

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

H. Renevier, C. Bougerol, B. Daudin, 2009, Nanotechnology.

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

H. Renevier, C. Bougerol, C. Leclere, 2011 .

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

H. Renevier, C. Bougerol, B. Daudin, 2011 .

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

H. Renevier, C. Bougerol, C. Leclere, 2012 .

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

C. Bougerol, E. Robin, B. Haas, 2020, Nanotechnology.

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

J. Eymery, M. Tchernycheva, C. Bougerol, 2018, ACS Photonics.

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

F. Julien, J. Eymery, X. Dai, 2015, Nano letters.

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

F. Julien, A. Vardi, E. Monroy, 2008 .

Bulachite, [Al6(AsO4)3(OH)9(H2O)4]⋅2H2O from Cap Garonne, France: Crystal structure and formation from a higher hydrate

C. Bougerol, H. Brand, P. Bordet, 2020, Mineralogical Magazine.

The structural properties of GaN insertions in GaN/AlN nanocolumn heterostructures

Y. Niquet, C. Bougerol, B. Daudin, 2009, Nanotechnology.

Elastic strain relaxation in GaN/AlN nanowire superlattice

V. Favre-Nicolin, H. Renevier, Y. Niquet, 2010 .

Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

R. LaPierre, C. Bougerol, J. Leymarie, 2020 .

Si doping of vapor-liquid-solid GaAs nanowires: n-type or p-type?

P. Hoggan, R. LaPierre, C. Bougerol, 2019, Nano letters.

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

C. Bougerol, V. Dubrovskii, C. Robert-Goumet, 2018, The Journal of Physical Chemistry C.

Improvement of the critical temperature of NbTiN films on III-nitride substrates

V. Zwiller, E. Monroy, C. Bougerol, 2018, Superconductor Science and Technology.

Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Y. Cordier, F. Medjdoub, C. Bougerol, 2022, Journal of Applied Physics.

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

E. Monroy, C. Bougerol, E. Bellet-Amalric, 2013 .

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes.

J. Eymery, J. Carlin, N. Grandjean, 2017, Nano letters.

Advanced semiconductor characterization with aberration corrected electron microscopes

J. Zuo, C. Bougerol, P. Bayle-Guillemaud, 2013 .

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

J. Eymery, C. Bougerol, A. Dussaigne, 2013, Nanoscale Research Letters.

Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides

J. Carlin, N. Grandjean, C. Bougerol, 2018, Japanese Journal of Applied Physics.

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

E. Monroy, C. Bougerol, J. Lähnemann, 2017, 1903.09375.

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

E. Monroy, C. Bougerol, M. Beeler, 2014 .

Growth of m-plane GaN quantum wires and quantum dots on m-plane 6H-SiC

J. Renard, C. Bougerol, B. Gayral, 2007 .

A high-temperature single-photon source from nanowire quantum dots.

C. Bougerol, K. Kheng, T. Aichele, 2008, Nano letters (Print).

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers.

E. Monroy, S. Purcell, C. Bougerol, 2021, Optics express.

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

E. Monroy, S. Purcell, C. Bougerol, 2019, Nanotechnology.

Galeaclolusite, [Al6(AsO4)3(OH)9(H2O)4]⋅8H2O, a new bulachite-related mineral from Cap Garonne, France

C. Bougerol, H. Brand, C. MacRae, 2020, Mineralogical Magazine.

∙ 8 H 2 O , a new bulachite-related mineral from Cap Garonne , France

C. Bougerol, C. MacRae, F. Shanks, 2020 .

Nordgauite, MnAl2(PO4)2(F,OH)2·5H2O, a new mineral from the Hagendorf-Süd pegmatite, Bavaria, Germany: description and crystal structure

C. Bougerol, A. Pring, S. Mills, 2011, Mineralogical Magazine.

Dual‐Color Emission from Monolithic m ‐Plane Core–Shell InGaN/GaN Quantum Wells

J. Eymery, M. Tchernycheva, C. Bougerol, 2021 .

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

M. Orenstein, E. Monroy, C. Bougerol, 2019, Journal of Applied Physics.

GaN/AlGaN Photovoltaic Quantum Well Infrared Photodetector at 2.3 μm

M. Orenstein, E. Monroy, C. Bougerol, 2018, 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

H. Amano, C. Bougerol, V. Dubrovskii, 2018, Nanotechnology.

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

C. Bougerol, V. Dubrovskii, J. Leymarie, 2018, Nanotechnology.

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

C. Bougerol, V. Dubrovskii, P. Ferret, 2020, Nano Futures.

Selective growth of ordered hexagonal InN nanorods

T. Taliercio, T. Cornelius, C. Bougerol, 2019, CrystEngComm.

High-quality NbN nanofilms on a GaN/AlN heterostructure

Val Zwiller, Jean-Michel Gérard, Eva Monroy, 2014 .

Subnanosecond spectral diffusion measurement using photon correlation

C. Bougerol, L. Besombes, K. Kheng, 2010, 1207.0676.

Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures

H. Renevier, Y. Niquet, C. Bougerol, 2012 .

Cu2ZnSn(S1−xSex)4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process

A. Brioude, C. Bougerol, E. Robin, 2014 .

CdSe quantum dot formation: alternative paths to relaxation of a strained CdSe layer and influence of the capping conditions

C. Bougerol, G. van Tendeloo, E. Bellet-Amalric, 2007, Nanotechnology.

UV-emission from GaN wires with m-plane core-shell GaN/AlGaN multiple quantum wells.

J. Eymery, E. Monroy, C. Bougerol, 2020, ACS applied materials & interfaces.

Electrical and optical properties of heavily Ge-doped AlGaN

E. Monroy, C. Bougerol, E. Robin, 2018, Journal of Physics D: Applied Physics.

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Y. Cordier, F. Medjdoub, C. Bougerol, 2019, Micromachines.

Strain relaxation in short-period polar GaN/AlN superlattices

E. Monroy, P. Ruterana, C. Bougerol, 2009 .

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

J. Eymery, M. Tchernycheva, C. Bougerol, 2011, Nano letters.

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

C. Bougerol, B. Gayral, A. Dussaigne, 2016 .

Growth mechanism of catalyst‐free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy

H. Renevier, C. Bougerol, B. Daudin, 2010 .

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

Xin Zhang, P. Jouneau, C. Bougerol, 2016, Nanotechnology.

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

C. Bougerol, V. Dubrovskii, G. Monier, 2017, Nanotechnology.

PbMnO2.75—a high-pressure phase having a new type of crystallographic shear structure derived from perovskite

C. Bougerol, I. Grey, M. Gorius, 2002 .

Measuring two dimensional strain state of AlN quantum dots in GaN nanowires by nanobeam electron diffraction

C. Bougerol, J. Rouviere, B. Daudin, 2011 .

Anisotropic strain relaxation in a-plane GaN quantum dots

H. Renevier, C. Humphreys, C. Bougerol, 2007 .

Structure of LaCuO2.66: an oxidized delafossite compound containing hole-doped kagome planes of Cu2+ cations

C. Bougerol, P. Bordet, C. Darie, 2003 .

Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

E. Monroy, P. Jouneau, C. Bougerol, 2016, Nanoscale Research Letters.

Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

J. Zuo, P. Jouneau, C. Bougerol, 2016, Journal of microscopy.

Paramagnetic shift in thermally annealed CdxZn1−xSe quantum dots

L. Worschech, A. Forchel, C. Bougerol, 2012 .

The structural properties of GaN/AlN core–shell nanocolumn heterostructures

H. Renevier, Y. Niquet, C. Bougerol, 2010, Nanotechnology.

Molecular beam epitaxy growth and optical properties of AlN nanowires

H. Renevier, C. Bougerol, B. Daudin, 2010 .

Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy

Y. Niquet, C. Bougerol, B. Daudin, 2010 .

Anisotropic strain state of the [11¯00] GaN quantum dots and quantum wires

H. Renevier, C. Bougerol, B. Daudin, 2008 .

Negative magnetopolarization in thermally annealed self-assembled quantum dots

L. Worschech, A. Forchel, S. Mahapatra, 2008 .

Self-assembly of CdSe∕ZnSe(001) quantum dot structures mediated by a tellurium cap layer

S. Mahapatra, C. Bougerol, K. Brunner, 2007 .

Optical characterization of thermally annealed self-assembled ZnCdSe quantum dots

L. Worschech, A. Forchel, G. Schmidt, 2007 .

Morphology of CdSe/ZnSe quantum dots grown by MBE

C. Bougerol, G. V. Tendeloo, B. Gilles, 2006 .

Growth and properties of defect‐free ZnSe nanowires and nanoneedles

C. Bougerol, F. Donatini, K. Kheng, 2009 .

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220 K

C. Bougerol, J. Bocquel, K. Kheng, 2008, 0809.2946.

Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

P. Jouneau, C. Bougerol, P. Vennégués, 2019, Nanotechnology.

Negative differential resistance in monolayer WTe2 tunneling transistors

M. Eickhoff, X. Liu, E. Monroy, 2015, Nanotechnology.

Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale.

E. Monroy, C. Bougerol, E. Robin, 2020, ACS applied materials & interfaces.

Growth of II–VI ZnSe/CdSe nanowires for quantum dot luminescence

C. Bougerol, S. Bounouar, K. Kheng, 2013 .

Quantum transport in GaN/AlN double-barrier heterostructure nanowires.

E. Monroy, C. Bougerol, G. Katsaros, 2010, Nano letters.

Inserting one single Mn ion into a quantum dot

Y. Léger, C. Bougerol, L. Besombes, 2006 .

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

C. Bougerol, G. Monier, E. Gil, 2012, Nanotechnology.

Tuning the magnetic properties of ZnCdSe/ZnSe quantum dots by thermal annealing

L. Worschech, A. Forchel, S. Mahapatra, 2006 .

Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy

E. Monroy, C. Bougerol, E. Bellet-Amalric, 2017 .

PITTONGITE, A NEW TUNGSTATE WITH A MIXED-LAYER, PYROCHLORE – HEXAGONAL TUNGSTEN BRONZE STRUCTURE, FROM VICTORIA, AUSTRALIA

C. Bougerol, A. Pring, S. Mills, 2007 .

New germanates RCrGeO5 (R=Nd–Er, Y): Synthesis, structure, and properties

G. Tendeloo, C. Bougerol, E. Antipov, 2008 .

Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

J. Eymery, P. Parbrook, C. Bougerol, 2020 .

Optical properties of single ZnTe nanowires grown at low temperature

C. Bougerol, G. Nogues, F. Donatini, 2013, 1306.2858.

Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

P. Hoggan, C. Bougerol, J. Leymarie, 2019, Applied Surface Science.

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

C. Bougerol, H. Mariette, R. Songmuang, 2012, 1206.4274.

High spatial resolution correlated investigation of Zn segregation to stacking faults in ZnTe/CdSe nanostructures

P. Jouneau, C. Bougerol, D. Blavette, 2018 .

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

B. Deveaud, N. Grandjean, C. Bougerol, 2017 .

Synthesis and structure investigation of the Pb3V(PO4)3 eulytite

C. Bougerol, E. Antipov, J. Hadermann, 2005 .

Chemical twinning of the pyrochlore structure in the system Bi2O3–Fe2O3–Nb2O5

C. Bougerol, W. Mumme, R. Roth, 2007 .

Unit-cell intergrowth of pyrochlore and hexagonal tungsten bronze structures in secondary tungsten minerals

C. Bougerol, S. Mills, I. Grey, 2006 .

Ordering of Pd(2+) and Pd(4+) in the mixed-valent palladate KPd(2)O(3).

C. Bougerol, E. Antipov, N. R. Khasanova, 2010, Inorganic Chemistry.

Coulsellite, CaNa3AlMg3F14, a rhombohedral pyrochlore with 1:3 ordering in both A and B sites, from the Cleveland Mine, Tasmania, Australia

C. Bougerol, A. Pring, I. Grey, 2010 .

Ordering of Pd2+ and Pd4+ in the Mixed‐Valent Palladate KPd2O3.

G. Tendeloo, C. Bougerol, E. Antipov, 2010 .

Overdoped cuprates with high-temperature superconducting transitions

C. Bougerol, M. Karppinen, T. Geballe, 2012, 1207.4239.

Insertion of CdSe quantum dots in ZnSe nanowires: Correlation of structural and chemical characterization with photoluminescence

C. Bougerol, S. Bounouar, K. Kheng, 2011 .

Strain assisted inter-diffusion in GaN/AlN quantum dots

H. Renevier, C. Bougerol, B. Gayral, 2013 .

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

P. Jouneau, C. Bougerol, A. Dussaigne, 2020, Journal of Applied Physics.

Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures

C. Bougerol, H. Mariette, R. André, 2009 .

Type‐II excitons in ZnTe/ZnSe quantum dots

Rita Najjar, Serge Tatarenko, Henri Mariette, 2009 .

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

X. J. Chen, J. Eymery, C. Bougerol, 2011 .

Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

M. Eickhoff, E. Monroy, C. Bougerol, 2016 .

Ge doping of GaN beyond the Mott transition

M. Eickhoff, E. Monroy, C. Bougerol, 2016, 1604.00231.

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

C. Bougerol, E. Monroy, E. Monroy, 2015, 1504.04989.

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

C. Bougerol, B. Gayral, F. Donatini, 2020, Nanotechnology.

Optical properties of m-plane GaN quantum dots and quantum wires

J. Renard, C. Bougerol, B. Gayral, 2008 .

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Eva Monroy, Edith Bellet-Amalric, Catherine Bougerol, 2014 .

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Maria Tchernycheva, S. Sakr, Eva Monroy, 2009 .

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

C. Bougerol, L. Besombes, K. Kheng, 2011, 1105.0774.

Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.

J. Renard, C. Bougerol, B. Gayral, 2008, Nano letters.

CdSe/ZnSe heteroepitaxy: Aspects of growth and self organization of nanostructures

L. Worschech, A. Forchel, W. Ossau, 2007 .

Type-II ZnTe/ZnSe quantum dots and quantum wells

C. Bougerol, L. Besombes, H. Mariette, 2009 .

Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots

C. Bougerol, E. Alves, T. Monteiro, 2010 .

Growth mechanism and properties of InGaN insertions in GaN nanowires

C. Bougerol, F. Glas, B. Gayral, 2012, Nanotechnology.

Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

C. Bougerol, B. Gayral, A. Grenier, 2011, Nanotechnology.

Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

E. Monroy, S. Purcell, C. Bougerol, 2020, Nanotechnology.

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Christelle Varenne, François Réveret, Dominique Castelluci, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

Xing Dai, Maria Tchernycheva, Christophe Durand, 2016, ACS photonics.

Ultrafast room temperature single-photon source from nanowire-quantum dots.

C. Bougerol, S. Bounouar, K. Kheng, 2012, Nano letters.

Nanowire Quantum Dots

C. Bougerol, K. Kheng, T. Aichele, 2011 .

Single photons from single CdSe quantum dot embedded in ZnSe nanowire

C. Bougerol, K. Kheng, T. Aichele, 2010 .

CdSe quantum dot in a ZnSe nanowire as an efficient source of single photons

C. Bougerol, K. Kheng, T. Aichele, 2009 .

A CdSe quantum dot in a ZnSe nanowire as an efficient high-temperature single-photon source

Le Si Dang, Jean-Philippe Poizat, Serge Tatarenko, 2009, OPTO.

CdSe quantum dot formation induced by amorphous Se

G. Tendeloo, C. Bougerol, T. Aichele, 2007 .

Structural and optical properties of CdSe quantum dots induced by amorphous Se

G. Tendeloo, C. Bougerol, T. Aichele, 2007 .

Elastic and surface energies: Two key parameters for CdSe quantum dot formation

C. Bougerol, T. Aichele, R. André, 2006 .

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.

C. Bougerol, M. Foldyna, F. Bayle, 2015, ACS applied materials & interfaces.

Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer

E. Monroy, Y. Désières, C. Bougerol, 2021 .

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

C. Bougerol, E. Monroy, C. Durand, 2014, 1602.07227.

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

J. Eymery, P. Jouneau, J. Carlin, 2014 .

Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

P. Jouneau, C. Bougerol, J. Rouviere, 2015 .

Bright CdSe quantum dot inserted in single ZnSe nanowires

A. Tribu, G. Sallen, T. Aichele, 2009, Microelectron. J..

Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

C. Bougerol, H. Okuno, S. Pouget, 2019, Nanotechnology.

Dopant radial inhomogeneity in Mg-doped GaN nanowires

P. Jouneau, C. Bougerol, E. Robin, 2018, Nanotechnology.

Lattice polarity and capping of GaN dots studied by Z-contrast imaging

C. Bougerol, J. Coraux, J. Rouviere, 2008 .

Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

J. Eymery, E. Monroy, C. Bougerol, 2014 .

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Eva Monroy, Christophe Durand, Luca Redaelli, 2016 .

Role of underlayer for efficient core-shell InGaN QWs grown on m-plane GaN wire sidewalls.

J. Eymery, C. Bougerol, E. Robin, 2020, ACS applied materials & interfaces.

Long catalyst-free InAs nanowires grown on silicon by HVPE

R. LaPierre, C. Bougerol, V. Dubrovskii, 2021, CrystEngComm.

Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures

E. Monroy, C. Bougerol, F. Donatini, 2016, Nanotechnology.

Development of AlGaN/GaN heterostructures for e-beam pumped UV lasers

Eva Monroy, Le Si Dang, Stephen T. Purcell, 2021, OPTO.

AlGaN/GaN heterostructures with asymmetric graded-index separate confinement heterostructure for electron-beam pumped UV lasers

E. Monroy, S. Purcell, C. Bougerol, 2021, 2101.01954.

Defect-free ZnSe nanowire and nanoneedle nanostructures

C. Bougerol, K. Kheng, T. Aichele, 2008, 0805.1818.

Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio

Xin Zhang, P. Jouneau, C. Bougerol, 2016 .

Optical spectroscopy of cubic GaN in nanowires

J. Renard, C. Bougerol, B. Gayral, 2010 .

Structural and optical properties of Alx Ga1–xN nanowires

H. Renevier, C. Bougerol, B. Gayral, 2013 .

Growth, structural and optical properties of AlGaN nanowires in the whole composition range

H. Renevier, C. Bougerol, B. Gayral, 2013, Nanotechnology.

Insertion of CdSe quantum dots in ZnSe nanowires: MBE growth and microstructure analysis

C. Bougerol, S. Bounouar, K. Kheng, 2011, 1207.7135.

Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

C. Bougerol, P. Vennégués, H. Mariette, 2007 .

Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes

J. Eymery, M. Tchernycheva, M. Foldyna, 2017 .

Towards vertical coupling of CdTe/ZnTe quantum dots formed by a high temperature tellurium induced process

C. Bougerol, P. Wojnar, L. Besombes, 2011 .

Control of single spins in individual magnetic quantum dots

Y. Léger, C. Bougerol, L. Besombes, 2006 .

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Paul Crozat, Raffaele Colombelli, Laurent Vivien, 2008 .

Strain effects in GaN/AlN short‐period superlattices for intersubband optoelectronics

E. Monroy, C. Bougerol, P. Kandaswamy, 2009 .

Optical Properties of Manganese-Doped Individual CdTe Quantum Dots

Y. Léger, C. Bougerol, L. Besombes, 2005 .

Exciton dynamics of a single quantum dot embedded in a nanowire

C. Bougerol, L. Besombes, K. Kheng, 2009 .

M-plane AlGaN digital alloy for microwire UV-B LEDs

J. Eymery, C. Bougerol, C. Durand, 2023, Applied Physics Letters.

Toward Crack-Free Core–Shell GaN/AlGaN Quantum Wells

C. Bougerol, B. Gayral, C. Durand, 2021, Crystal Growth & Design.

UV emission from MOVPE nanowire LEDs

J. Eymery, C. Bougerol, C. Durand, 2023, OPTO.

InGaN/GaN multiple‐quantum well heterostructures for solar cells grown by MOVPE: case studies

J. Eymery, E. Monroy, C. Bougerol, 2013 .

Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum wells.

E. Monroy, S. Hermelin, S. Purcell, 2021, Optics express.

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

F. Julien, J. Eymery, X. Dai, 2015, Nano letters.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

J. Eymery, M. Tchernycheva, C. Bougerol, 2011, Nano letters.

InGaN/GaN nanowire flexible light emitting diodes and photodetectors

J. Eymery, X. Dai, M. Tchernycheva, 2017, International Conference on Transparent Optical Networks.

Ultrafast room temperature single-photon source from nanowire-quantum dots.

C. Bougerol, K. Kheng, M. D. Hertog, 2012, Nano letters.