A. Fayyaz

发表

Short-circuit failure mechanism of SiC power MOSFETs

V. d'Alessandro, A. Irace, G. Breglio, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs

A. Irace, G. Breglio, L. Maresca, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

An Efficient Simulation Methodology to Quantify the Impact of Parameter Fluctuations on the Electrothermal Behavior of Multichip SiC Power Modules

V. d’Alessandro, A. Irace, A. Castellazzi, 2019, Materials Science Forum.

Analysis of Device and Circuit Parameters Variability in SiC MOSFETs-Based Multichip Power Module

V. d'Alessandro, A. Irace, G. Breglio, 2018, 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe).

Transient robustness testing of silicon carbide (SiC) power MOSFETs

Li Yang, Alberto Castellazzi, Asad Fayyaz, 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

Static and dynamic TSEPs of SiC and GaN transistors

A. Castellazzi, A. Fayyaz, Siwei Zhu, 2018 .

FREQUENCY OF LEFT ATRIAL THROMBUS DETECTED BY TRANSESOPHAGEAL ECHOCARDIOGRAPHY IN PATIENTS OF TIGHT MITRAL STENOSIS HAVING NEGATIVE TRANS-THORACIC ECHOCARDIOGRAPHY AT GULAB DEVI CARDIAC COMPLEX

A. Fayyaz, A. Hanif, M. W. Iqbal, 2014 .

Fayyaz, Asad and Romano, Gianpaolo and Urresti, Jesus and Riccio, Michele and Castellazzi, Alberto and Irace, Andrea and Wright, Nick (2017) A comprehensive study on the avalanche breakdown robustness of silicon

A. Irace, A. Castellazzi, M. Riccio, 2017 .

Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

F. Richardeau, A. Castellazzi, A. Fayyaz, 2019, 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).

FREQUENCY OF LEFT VENTRICULAR THROMBUS AFTER ANTERIOR WALL ST-SEGMENT ELEVATION ACUTE MYOCARDIAL INFARCTION

A. Fayyaz, A. Hanif, M. W. Iqbal, 2014 .

Short-circuit robustness of SiC Power MOSFETs: Experimental analysis

Li Yang, Andrea Irace, Alberto Castellazzi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

Luca Maresca, Andrea Irace, Giovanni Breglio, 2016, IEEE Journal of Emerging and Selected Topics in Power Electronics.

Body diode reliability investigation of SiC power MOSFETs

Alberto Castellazzi, Asad Fayyaz, G. Romano, 2016, Microelectron. Reliab..

SiC power MOSFETs performance, robustness and technology maturity

Andrea Irace, Li Yang, Alberto Castellazzi, 2016, Microelectron. Reliab..

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

Andrea Irace, Li Yang, Alberto Castellazzi, 2014, Microelectron. Reliab..

Performance and robustness characterisation of SiC power MOSFETs

Asad Fayyaz, A. Fayyaz, 2018 .

SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization

F. Richardeau, A. Castellazzi, A. Fayyaz, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Transient out-of-SOA robustness of SiC power MOSFETs

Andrea Irace, Alberto Castellazzi, Michele Riccio, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Avalanche ruggedness of parallel SiC power MOSFETs

Andrea Irace, Alberto Castellazzi, Michele Riccio, 2018, Microelectron. Reliab..

Characterization of high-voltage SiC MOSFETs under UIS avalanche stress

Alberto Castellazzi, Asad Fayyaz, Li Yang, 2014 .

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Dominique Planson, Alberto Castellazzi, Oriol Avino-Salvado, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Andrea Irace, Alberto Castellazzi, Michele Riccio, 2017 .

SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).

SiC MOSFETs

A. Irace, A. Castellazzi, G. Breglio, 2020, Modern Power Electronic Devices: Physics, applications, and reliability.

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs

A. Irace, M. Riccio, A. Castellazzi, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs

Luca Maresca, Andrea Irace, Giovanni Breglio, 2019, IEEE Journal of Emerging and Selected Topics in Power Electronics.

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Alberto Castellazzi, Asad Fayyaz, A. Castellazzi, 2015, Microelectron. Reliab..

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode

A. Irace, F. Richardeau, A. Castellazzi, 2020, Microelectronics Reliability.

Performance and robustness testing of SiC power devices

Alberto Castellazzi, Asad Fayyaz, A. Castellazzi, 2012 .

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Dominique Planson, Hervé Morel, Alberto Castellazzi, 2018, Microelectron. Reliab..