J. Lin
发表
D-H Kim,
J. A. del Alamo,
D. Antoniadis,
2013,
2013 IEEE International Electron Devices Meeting.
J. D. del Alamo,
A. Vardi,
J. Lin,
2017,
IEEE Transactions on Semiconductor Manufacturing.
D. Antoniadis,
J. D. del Alamo,
J. Lin,
2016,
IEEE Transactions on Electron Devices.
Sub-30 nm InAs Quantum-Well MOSFETs with self-aligned metal contacts and Sub-1 nm EOT HfO2 insulator
D. A. Antoniadis,
J. A. del Alamo,
D. Antoniadis,
2012,
2012 International Electron Devices Meeting.
D. Pettengill,
S. S. Laderman,
Theodore I. Kamins,
1994
.
Y. Fukuzumi,
K. Eguchi,
K. Hieda,
1999,
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
P. Kirsch,
K. Tateiwa,
R. Jammy,
2010,
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.