M. Sousa

发表

Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy

H. Riel, J. Bruley, C. Breslin, 2018, Nanotechnology.

Three-dimensional monolithic integration of III–V and Si(Ge) FETs for hybrid CMOS and beyond

Lukas Czornomaz, Karthik Balakrishnan, Thomas Morf, 2017 .

First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

P. Hashemi, E. O'Connor, V. Djara, 2017, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography

Martin Spieser, Marilyne Sousa, Heiko Wolf, 2017, ACS nano.

Modeling approaches for band-structure calculation in III-V FET quantum wells

A. Gnudi, G. Baccarani, M. Luisier, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells

A. Gnudi, G. Baccarani, M. Luisier, 2016 .

Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers

F. Horst, B. Offrein, R. Dangel, 2018, IEEE Journal of Selected Topics in Quantum Electronics.

A Hybrid Barium Titanate–Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning

Lukas Czornomaz, Bert J. Offrein, Chiara Marchiori, 2016, Journal of Lightwave Technology.

InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding

K. Moselund, H. Schmid, D. Caimi, 2019, IEEE Journal of Selected Topics in Quantum Electronics.

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

D. Caimi, L. Czornomaz, J. Fompeyrine, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Lukas Czornomaz, Chiara Marchiori, Jean Fompeyrine, 2014 .

Effects of Post Metallization Annealing on InGaAs-on-Insulator MOSFETs on Si

D. Caimi, C. Convertino, M. Sousa, 2019, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications

K. Moselund, D. Caimi, C. Convertino, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

V. Djara, D. Caimi, J. Fompeyrine, 2016 .

Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics

Florian Fallegger, Bert Jan Offrein, Eamon O'Connor, 2016 .

III–V heterostructure-on-insulator for strain studies in n-InGaAs channels

D. Caimi, L. Czornomaz, J. Fompeyrine, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

A strong electro-optically active lead-free ferroelectric integrated on silicon

Alexei Chelnokov, Chiara Marchiori, Jean Fompeyrine, 2013, Nature Communications.

Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics

Patrik Hoffmann, Morgan Trassin, Chiara Marchiori, 2017, Nanotechnology.

Hybrid III-V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths.

K. Moselund, H. Schmid, D. Caimi, 2020, Nano letters.

Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP

M. Sousa, L. Czornomaz, H. Hahn, 2017 .

Semiconductor Epitaxy in Superconducting Templates

H. Riel, H. Schmid, M. Sousa, 2021, Nano letters.

Optical properties of epitaxial SrHfO3 thin films grown on Si

K. Babich, D. Webb, R. Germann, 2007 .

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

A. Kellock, E. O'Connor, F. Eltes, 2018, APL Materials.

(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology

Lukas Czornomaz, Eamon O'Connor, Vladimir Djara, 2015 .

Strain enhancement of the electro-optical response in BaTiO3 films integrated on Si(001)

Kristy J. Kormondy, A. Demkov, F. Eltes, 2018, Physical Review B.

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

P. Niedermann, A. Dommann, H. Känel, 2013 .

Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si

A. Dimoulas, J. Locquet, J. Fompeyrine, 2008 .

Epitaxial germanium-on-insulator grown on (001) Si

A. Dimoulas, C. Rossel, J. Locquet, 2007 .

Waveguide coupled III-V photodiodes monolithically integrated on Si

B. Gotsmann, J. Leuthold, K. Moselund, 2021, Nature Communications.

Development of a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using nanoparticle solutions.

J. Locquet, H. Guillon, C. Bartic, 2016, The Review of scientific instruments.

Learning-based defect recognition for quasi-periodic HRSTEM images.

M. Sousa, T. Neupert, N. Dennler, 2020, Micron.

SrHfO3 as gate dielectric for future CMOS technology

K. Babich, D. Webb, R. Germann, 2007 .

Enhanced uniaxial magnetic anisotropy in Fe31Co69 thin films on GaAs(001)

M. Sousa, G. Salis, S. Alvarado, 2008 .

In-plane monolithic integration of scaled III-V photonic devices

K. Moselund, H. Schmid, M. Sousa, 2020, 2020 European Conference on Optical Communications (ECOC).

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

Lukas Czornomaz, Kirsten Moselund, Heinz Schmid, 2018, Materials.

Scaled III-V optoelectronic devices on silicon

A. Schenk, K. Moselund, H. Schmid, 2020, 2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance

D. Caimi, T. Merkle, C. Convertino, 2018, 2018 IEEE Symposium on VLSI Technology.

Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces

M. Silly, F. Sirotti, S. Abel, 2014 .

Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics

S. Koester, D. Webb, R. Germann, 2006, 2006 64th Device Research Conference.

High-speed III-V nanowire photodetector monolithically integrated on Si

A. Schenk, K. Moselund, M. Rossell, 2020, Nature Communications.

Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates

S. Wirths, K. Moselund, H. Schmid, 2019, IEEE Photonics Technology Letters.

Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance

B. Offrein, S. Abel, D. Caimi, 2015, 2015 European Conference on Optical Communication (ECOC).

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

High mobility III–V channel MOSFETs for post-Si CMOS applications

S. Koester, D. Webb, J. Bucchignano, 2009, 2009 IEEE International Conference on IC Design and Technology.

Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights

F. Puglisi, B. Offrein, M. Sousa, 2022, Neuromorph. Comput. Eng..

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di‐t‐butoxydiacetoxysilane

J. Locquet, H. Guillon, M. Sousa, 2017 .

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI‐LPCVD) for the Deposition of Thin Films

J. Locquet, H. Guillon, M. Sousa, 2017 .

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications

D. Webb, R. Germann, C. Rossel, 2009 .

Spatially resolved thermoelectric effects in operando semiconductor-metal nanowire heterostructures.

B. Gotsmann, M. Sousa, A. Lugstein, 2020, Nanoscale.

Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films

Jean-Pierre Locquet, Chiara Marchiori, Marilyne Sousa, 2015 .

Optical Properties of Amorphous and Crystalline GeTe Nanoparticle Thin Films: A Phase-Change Material for Tunable Photonics

V. Wood, M. Sousa, Olesya Yarema, 2020 .

Learning-based Defect Recognition for Quasi-Periodic Microscope Images

M. Sousa, T. Neupert, N. Dennler, 2020, ArXiv.

Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics

Alexander A. Demkov, Chiara Marchiori, Kristy J. Kormondy, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

Lukas Czornomaz, Florian Fallegger, Alexander A. Demkov, 2015 .

Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si

M D Rossell, C. Rossel, S. Abel, 2013, Nanotechnology.

Electro-optical properties of barium titanate films epitaxially grown on silicon

Alexei Chelnokov, Chiara Marchiori, Jean Fompeyrine, 2012, OPTO.

Thermal stability of the SrTiO3∕(Ba,Sr)O stacks epitaxially grown on Si

J. Locquet, J. Fompeyrine, M. Sousa, 2006 .

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

M. Luisier, B. Offrein, S. Abel, 2020, ACS applied materials & interfaces.

Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface.

H. Riel, B. Gotsmann, M. Sousa, 2014, Nature materials.

Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices

A. Dimoulas, D. Webb, C. Rossel, 2009 .

Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware

F. Puglisi, B. Offrein, M. Sousa, 2022, Advanced Electronic Materials.

Gate Dielectrics for High Mobility Semiconductors

A. Dimoulas, D. Webb, C. Rossel, 2008 .

Field-effect transistors with SrHfO3 as gate oxide

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

Scaling of metal-clad InP nanodisk lasers: optical performance and thermal effects.

K. Moselund, D. Caimi, M. Sousa, 2020, Optics express.

Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

K. Moselund, D. Caimi, M. Sousa, 2021, IEEE Transactions on Electron Devices.

Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy

Kirsten Moselund, Heinz Schmid, Marilyne Sousa, 2018, Photonics Europe.

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

Heike Riel, Stephan Wirths, Heinz Schmid, 2017, 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co1–xSix Semimetal Thin Films

Holt P. Bui, J. Jordan-Sweet, C. Lavoie, 2023, ACS applied electronic materials.

Investigating the molecular mechanisms of in-plane mechanochemistry on cantilever arrays.

Marilyne Sousa, Martin Hegner, H. Lang, 2007, Journal of the American Chemical Society.

GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

T. Topuria, P. Rice, D. Webb, 2011 .

Fingerprinting Electronic Molecular Complexes in Liquid

Heike Riel, Bernd Gotsmann, Marilyne Sousa, 2016, Scientific Reports.

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

D. Webb, C. Rossel, E. Kiewra, 2010 .

High-speed CMOS-compatible III-V on Si membrane photodetectors

J. Faist, J. Leuthold, B. Offrein, 2020, Optics Express.

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

V. Djara, D. Caimi, J. Fompeyrine, 2015 .

Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

V. Djara, D. Caimi, J. Fompeyrine, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

CMOS-Compatible Replacement Metal Gate InGaAs-OI FinFET With $I_{ON}=156~\mu \text{A}/\mu \text{m}$ at $V_{DD}= 0.5$ V and

Lukas Czornomaz, Vladimir Djara, Jean Fompeyrine, 2016, IEEE Electron Device Letters.

Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems

H. Riel, W. Wegscheider, M. Sousa, 2023, Physical Review Materials.

InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance

A. Schenk, F. Eltes, D. Caimi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

InGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS With Record Performance

D. Caimi, C. Convertino, M. Sousa, 2019, IEEE Journal of the Electron Devices Society.

High-performance InGaAs FinFETs with raised source/drain extensions

K. Moselund, D. Caimi, C. Convertino, 2019, Japanese Journal of Applied Physics.

Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities

K. Moselund, H. Schmid, D. Caimi, 2019, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

III-V-on-Si transistor technologies: Performance boosters and integration

Thomas Morf, Heinz Schmid, Kirsten E. Moselund, 2021 .

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

A. Ionescu, K. Moselund, D. Caimi, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications

D. Caimi, C. Convertino, M. Sousa, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates

K. Cheng, D. Caimi, L. Czornomaz, 2013, 2013 IEEE International Electron Devices Meeting.

A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

H. Hahn, P. Palestri, L. Selmi, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts

M. Vinet, H. Hahn, J. Widiez, 2017, 2017 Symposium on VLSI Technology.

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction

David J. Webb, Jean-Pierre Locquet, A. Dimoulas, 2007 .

Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

H. Schmid, V. Georgiev, M. Sousa, 2022, Journal of Crystal Growth.

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon

H. Riel, S. Wirths, K. Moselund, 2017, 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).