Wei-I Lee

发表

Reliability study of high-κ La2O3/HfO2 and HfO2/La2O3 stacking layers on n-In0.53Ga0.47As metal–oxide–semiconductor capacitor

B. Majlis, C. Dee, Yueh-Chin Lin, 2016 .

Electrooptical properties of GaNAs/GaAs multiple quantum well structures

Shih-Chang Lee, Wei-I Lee, Jia-Ren Lee, 2003 .

A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy

C. Chu, Wei-I Lee, Yin-Hao Wu, 2013 .

Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy

Wei-I Lee, Yin-Hao Wu, Yen-Hsien Yeh, 2011 .

Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy

Wei-I Lee, Yin-Hao Wu, J. Tsay, 2010 .

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

Shih-Chang Lee, Wei-I Lee, Jia-Ren Lee, 2005 .

Phosphorus vacancy as a deep level in AlInP layers

Shih-Chang Lee, Wei-I Lee, W. Sung, 2000 .

Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask

Wei-I Lee, Y. Chou, Changgang Huang, 2019, The Journal of Physical Chemistry C.

Majority- and minority-carrier traps in Te-doped AlInP

Wei-I Lee, W. Sung, Yun-Lin Wu, 1999 .

Triangular Extended Microtunnels in GaN Prepared by Selective Crystallographic Wet Chemical Etching

Wei-I Lee, J. Tsay, T. Chi, 2008 .

Extended microtunnels in GaN prepared by wet chemical etch

Shih-Chang Lee, Wei-I Lee, C. P. Lee, 2006 .

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Wei-I Lee, Yin-Hao Wu, J. Tsay, 2010 .

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, 2014 .

Study of free-standing GaN substrates prepared by hydride vapor phase epitaxy technology

Wei-I Lee, C. Kuo, Tsung-Yu Chen, 2003, Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701).

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

B. Majlis, C. Dee, Yueh-Chin Lin, 2016, Journal of Electronic Materials.

EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

T. C. Huang, Wei-I Lee, J. Guo, 1995 .

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

C. Chu, Wei-I Lee, Yin-Hao Wu, 2015 .

Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures

E. Chang, C. Chu, Wei-I Lee, 2016 .

Preparation of extended microtunnels in GaN by wet chemical etching

Wei-I Lee, H. Huang, Hung-Yu Zeng, 2007 .

Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

T. Wen, J. Sheu, Wei-I Lee, 2002 .

Electrically active nanoantenna array enabled by varying the molecular orientation of an interfaced liquid crystal

Kuo‐Ping Chen, Wei-I Lee, Y. Hsiao, 2016 .

Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Wei-I Lee, Yin-Hao Wu, Yen-Hsien Yeh, 2011 .

Hydrogen etching on the surface of GaN for producing patterned structures

Wei-I Lee, Yin-Hao Wu, Yen-Hsien Yeh, 2011 .

Temperature‐dependent transport properties of n+ GaAs/low‐temperature GaAs/n+ GaAs structures grown by molecular beam epitaxy

A. Chin, Wei-I Lee, Jenn‐Fang Chen, 1996 .

Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Wei-I Lee, L. Hsieh, J. Huang, 1998 .

Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy

Wei-I Lee, J. Huang, Z. Su, 1998 .

Nonlithographic Random Masking and Regrowth of GaN Microhillocks to Improve Light-Emitting Diode Efficiency

Shih-Chang Lee, Wei-I Lee, Chi-Ling Lee, 2005 .

Microscopic evidence for the dissociation of water molecules on cleaved GaN(11[combining macron]00).

J. Kuo, Wei-I Lee, Shi‐yu Wu, 2018, Physical chemistry chemical physics : PCCP.

MBE growth and structural and magnetic properties of (In1−yAly)1−xMnxAs-diluted magnetic semiconductors

Wei-I Lee, X. J. Guo, H. Ku, 2006 .

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chun-Yen Chang, S. Sze, Wei-I Lee, 1994 .

The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

Wei-I Lee, Cheng-Da Tsai, I. Lo, 2014 .

Chiral Optical Tamm States: Temporal Coupled-Mode Theory

Wei-I Lee, V. Zyryanov, V. Arkhipkin, 2017, 1703.00310.

Formation of nitride laser cavities with cleaved facets on transferred laser diodes on GaAs substrates

Wei-I Lee, Wenqian Yu, Chih-Ling Lee, 2008 .

Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition

Wei-I Lee, Yen-Teng Ho, M. Liang, 2008 .

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

Wei-I Lee, Y. Chou, Yi-Chieh Chou, 2017, Scientific Reports.

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

Wei-I Lee, Y. Chou, Yi-Chieh Chou, 2017, Scientific Reports.

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

Yu-Lin Hsiao, Wei-I Lee, Edward Yi Chang, 2011 .

Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

H. Kuo, Wei-I Lee, C. Chiu, 2015 .

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Burhanuddin Yeop Majlis, Chang Fu Dee, Seong Ling Yap, 2016, Journal of Electronic Materials.

Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

L. Tu, H. Kuo, Wei-I Lee, 2009 .

The effect of the flipped classroom approach to OpenCourseWare instruction on students' self-regulation

Jerry Chih-Yuan Sun, Wei-I Lee, Yu-Ting Wu, 2017, Br. J. Educ. Technol..

Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well

Shih-Chang Lee, Wei-I Lee, Tzu-Chi Wen, 2001, SPIE OPTO.

Free-standing a-plane GaN substrates grown by HVPE

Yin-Hao Wu, Yen-Hsien Yeh, Kuei-Ming Chen, 2012, OPTO.

Using Planarized p-GaN Layer to Reduce Electrostatic Discharged Damage in Nitride-Based Light-Emitting Diode

Wei-I Lee, Chih-Ling Lee, 2007 .

Degradation phenomena of multilayer ZnO–glass varistors studied by deep level transient spectroscopy

T. Tseng, Wei-I Lee, Yin-Pin Wang, 1996 .