E. Kong

发表

Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation

Y. Yeo, E. Kong, S. Subramanian, 2014, IEEE Transactions on Electron Devices.

Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs

Ivana, Y. Yeo, Qian Zhou, 2012, 2011 International Semiconductor Device Research Symposium (ISDRS).

Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing

Ivana, Y. Yeo, Qian Zhou, 2013 .

Fabrication and Negative Bias Temperature Instability (NBTI) Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate

Y. Yeo, W. Wang, B. Liu, 2013 .

Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs

A. Thean, W. Schwarzenbach, B. Nguyen, 2019, IEEE Transactions on Electron Devices.

Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

Y. Yeo, B. Liu, G. Samudra, 2011, IEEE Transactions on Electron Devices.

GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,int of 900 µS/µm, and High-Field µeff of 275 cm2/V•s

C. S. Tan, Shengqiang Xu, Yi-Chiau Huang, 2018, 2018 IEEE Symposium on VLSI Technology.

Hybrid Design Using Metal–Oxide– Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications

C. Heng, X. Gong, E. Kong, 2021, IEEE Transactions on Electron Devices.

Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As

Y. Yeo, E. Kong, Xingui Zhang, 2012 .

P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs

Y. Yeo, E. Kong, S. Subramanian, 2014, IEEE Transactions on Electron Devices.

Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width.

G. Liang, Shengqiang Xu, X. Gong, 2021, Nano letters.

Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution

E. Kong, S. Masudy‐Panah, R. Katal, 2020 .

Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

Y. Yeo, B. Nguyen, B. Liu, 2013, IEEE Transactions on Electron Devices.

Extraction of Polarization-Dependent Damping Constant for Dynamic Evaluation of Ferroelectric Films and Devices

Yang Li, Xiao Gong, Kaizhen Han, 2018, IEEE Electron Device Letters.

Junctionless Π-gate transistor with indium gallium arsenide channel

Y. Yeo, E. Kong, Zhu Zhu, 2013 .

Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs

B. Liu, Y. Yeo, G. Han, 2012 .

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

Y. Yeo, W. Wang, B. Liu, 2013, IEEE Transactions on Electron Devices.

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Kain Lu Low, Y. Yeo, C. Chia, 2013 .

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Y. Yeo, B. Liu, P. Guo, 2014, IEEE Transactions on Electron Devices.

Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs

Y. Yeo, B. Liu, P. Guo, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).