V. D'costa

发表

Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation

Y. Yeo, E. Kong, S. Subramanian, 2014, IEEE Transactions on Electron Devices.

Abrupt SiGe-to-Si interface: influence of chemical vapor deposition processes and characterization by different metrology techniques

V. D'costa, J. Tolle, D. Kohen, 2018, Semiconductor Science and Technology.

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

T. K. Chan, Y. Yeo, Lanxiang Wang, 2014 .

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Near-bandgap optical properties of pseudomorphic GeSn alloys grown by molecular beam epitaxy

Y. Yeo, V. D'costa, Wei Wang, 2016 .

Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides

V. D'costa, P. Crozier, J. Tolle, 2005 .

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics.

V. D'costa, A. Chizmeshya, J. Tolle, 2009, Dalton transactions.

Raman scattering in Ge1−ySny alloys

John Tolle, John Kouvetakis, Christian D. Poweleit, 2007 .

In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Wei Wang, Yee-Chia Yeo, Eng Soon Tok, 2016 .

Synthesis, Stability Range, and Fundamental Properties of Si—Ge—Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

V. D'costa, A. Chizmeshya, J. Tolle, 2010 .

Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Y. Yeo, S. Subramanian, V. D'costa, 2014 .

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Jin Fan, Martin Mandl, Shun Lien Chuang, 2011 .

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

Y. Yeo, Qian Zhou, V. D'costa, 2016 .

Compositional dependence of Raman frequencies in ternary Ge 1-x-y Si x Sn y alloys

C. Poweleit, V. D'costa, J. Tolle, 2007 .

Ge1−ySny∕Si(100) composite substrates for growth of InxGa1−xAs and GaAs1−xSbx alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2007 .

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

V. D'costa, Yan Fang, A. Chizmeshya, 2008, Journal of the American Chemical Society.

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

V. D'costa, A. Chizmeshya, J. Tolle, 2006 .

Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

Stefan Zollner, John Kouvetakis, Jose Menendez, 2006 .

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

V. D'costa, J. Tolle, Y. Fang, 2009, Physical review letters.

Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys

Y. Yeo, Qian Zhou, V. D'costa, 2014 .

Transferability of optical bowing parameters between binary and ternary group-IV alloys

S. Zollner, V. D'costa, J. Tolle, 2006 .

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Y. Yeo, V. D'costa, S. Yoon, 2015 .

Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Y. Yeo, V. D'costa, 2015 .

Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Y. Yeo, V. D'costa, Qian Zhou, 2014 .

Infrared dielectric function of p -type Ge 0.98 Sn 0.02 alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy

V. D'costa, A. Chizmeshya, J. Tolle, 2005 .