Tae-Woo Kim

发表

A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

D. Antoniadis, J. Alamo, Jianqiang Lin, 2012 .

Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs

Tae-Woo Kim, S. Shin, J. Song, 2011 .

Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

Daehyun Kim, H. Sugiyama, Jung-Hee Lee, 2019, Applied Physics Express.

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

Daehyun Kim, H. Sugiyama, Jung-Hee Lee, 2018, IEEE Electron Device Letters.

L g = 100 nm InAs PHEMTs on InP substrate with record high frequency response

M. Urteaga, Daehyun Kim, B. Brar, 2012 .

Quantum capacitance in scaled down III–V FETs

Daehyun Kim, J. D. del Alamo, Tae-Woo Kim, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance p-HEMTs

Daehyun Kim, Young-woon Kim, Tae-Woo Kim, 2008 .

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}\hbox{/}\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

Daehyun Kim, Young-woon Kim, Tae-Woo Kim, 2008, IEEE Transactions on Electron Devices.

Stepper-based Lg = 0.5 μm In0.52Al0.48As/In0.7Ga0.3As PHEMTs on a 3-inch InP substrate with record product of fT and Lg

Daehyun Kim, J. Park, Jung-Hee Lee, 2018, Solid-State Electronics.

High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. D. del Alamo, 2013, IEEE Electron Device Letters.

High-Speed E-Mode InAs QW MOSFETs With Al 2 O 3 Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. Alamo, 2013 .

60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics

Daehyun Kim, J. D. del Alamo, Tae-Woo Kim, 2010, 2010 International Electron Devices Meeting.

InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

Daehyun Kim, J. Alamo, Tae-Woo Kim, 2011 .

A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs

L. Larcher, G. Bersuker, D. Veksler, 2015 .

Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

Seung Ryul Lee, Daehyun Kim, J. Park, 2017, IEEE Electron Device Letters.

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Daehyun Kim, Tae-Woo Kim, M. Rahman, 2019, Scientific Reports.

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Daehyun Kim, Tae-Woo Kim, Md Mamunur Rahman, 2020, Nanomaterials.

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Tae-Woo Kim, Md Mamunur Rahman, Kitagawa Shin, 2020, Materials.

A unified method to extract the effective mobility in InGaAs metal-insulator-semiconductor field-effect-transistors using scattering-parameters

Daehyun Kim, Tae-Woo Kim, Hyeon-Bhin Jo, 2019 .

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Daehyun Kim, Tae-Woo Kim, M. Rahman, 2019, Micromachines.

Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model

Tae-Woo Kim, S. Chakraborty, 2021, Electronics.

Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique

Daehyun Kim, Hyoungsub Kim, Tae-Woo Kim, 2020 .

A Capless InP/In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As

Tae-Woo Kim, Jong-In Song, S. Jo, 2006 .

Electrical characteristics of buried-Pt Schottky contacts on thin InP/InAlAs heterostructures

Tae-Woo Kim, S. Shin, Jae‐Hyung Jang, 2011 .

Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching

Tae-Woo Kim, S. Shin, Jae‐Hyung Jang, 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

Performance of capless self-aligned gate D- and QE-mode p-HEMTs

Tae-Woo Kim, Jong-In Song, J. Chun, 2008, 2008 International Conference on Microwave and Millimeter Wave Technology.

Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ p-HEMTs

Daehyun Kim, J. Rhee, Tae-Woo Kim, 2007, IEEE Electron Device Letters.

Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

Tae-Woo Kim, Jae‐Hyung Jang, G. Yeom, 2007 .

Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for high electron mobility transistor fabrication

Han-Young Lee, Tae-Woo Kim, Jae‐Hyung Jang, 2007 .

Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of

Daehyun Kim, J. Rhee, Tae-Woo Kim, 2007 .

Suppression of kink phenomenon in ultra-high-speed strained InAs- inserted E-mode HEMTs with a new 0.1 /spl mu/m Y-shaped Pt-buried gate and their impacts on device performance

Daehyun Kim, K. Seo, Tae-Woo Kim, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In 0.53 Ga 0.47 As/Al 2 O 3 /HfO 2 Stack

G. Bersuker, D. Veksler, Tae-Woo Kim, 2014 .

Comprehensive modeling of the extrinsic transconductance for In Ga As/In Al As quantum-well high-electron-mobility transistors

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2022, Solid-State Electronics.

Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2022, Solid-State Electronics.

Instability Assessment of AlGaN/GaN High Electron Mobility Transistors Under High Drain Current Condition

H. Sugiyama, Tae-Woo Kim, T. Tsutsumi, 2022, 2022 Asia-Pacific Microwave Conference (APMC).

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As

Tae-Woo Kim, M. Rahman, M. Rahman, 2021, ACS Applied Electronic Materials.

Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0.53Ga0.47As

Daehyun Kim, Tae-Woo Kim, Jun-Gyu Kim, 2019, Japanese Journal of Applied Physics.

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

M. Urteaga, D. Antoniadis, Daehyun Kim, 2012 .

Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs

Tomas Palacios, Tae-Woo Kim, T. Palacios, 2010, 2010 International Electron Devices Meeting.

Atomic layer etching of InP using a low angle forward reflected Ne neutral beam

Tae-Woo Kim, Jae‐Hyung Jang, G. Yeom, 2006 .

Effect of high-pressure deuterium annealing with high-κ stack onto In0.53Ga0.47As MOS capacitors on 300 mm Si substrate

Daehyun Kim, Tae-Woo Kim, S. Shin, 2018, Japanese Journal of Applied Physics.

A comprehensive investigation of the bias temperature instability associated with charge trapping in In0.7Ga0.3As MOSFETs with various high-κ stacks

Daehyun Kim, Tae-Woo Kim, H. Kwon, 2018, Japanese Journal of Applied Physics.

Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

S. Banerjee, Daehyun Kim, T. Orzali, 2015 .

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

Tae-Woo Kim, A. Bhattacharjee, 2021, Materials.

Microwave Photonic Mixer Utilizing an InGaAs Photoconductor for Radio over Fiber Applications

Jong-In Song, Tae-Woo Kim, Ho-Jin Song, 2007, IEICE Trans. Electron..

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Byoung Hun Lee, Sung-Kyu Kwon, Sun-Ho Oh, 2014, IEEE Transactions on Electron Devices.

Crystalline quality improvement of In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

Tae-Woo Kim, Soo‐Ghang Ihn, Jong-In Song, 2005, International Conference on Indium Phosphide and Related Materials.

Impact of Charge-Trapping Effects on Reliability Instability in AlxGa1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions

Tae-Woo Kim, Walid Amir, Surajit Chakraborty, 2023, Materials.

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2023, IEEE Transactions on Electron Devices.

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

H. Sugiyama, H. Matsuzaki, Tae-Woo Kim, 2021, Scientific reports.

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Tae-Woo Kim, Surajit Chakraborty, 2022, Micromachines.

Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2023, Electronics.

${L}_{{g}} = {87}$

nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and

Daehyun Kim, H. Sugiyama, Jung-Hee Lee, 2018, IEEE Electron Device Letters.

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2021, IEEE Transactions on Electron Devices.

Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications

Tae-Woo Kim, 2019 .

Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs

Daehyun Kim, Tae-Woo Kim, Hyeon-Bhin Jo, 2021, IEEE Journal of the Electron Devices Society.

Impact of in situ atomic layer deposition TiN/high-κ stack onto In0.53Ga0.47As MOSCAPs on 300 mm Si substrate

Daehyun Kim, Tae-Woo Kim, H. Kwon, 2019, Japanese Journal of Applied Physics.

Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate

Dae-Hyun Kim, Walid Amir, Tae-Woo Kim, 2020, IEEE Access.

Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator

Daehyun Kim, Tae-Woo Kim, 2015 .

Hot carrier instability associated with hot carrier injection and charge injection in In0.7Ga0.3As MOSFETs with high-κ stacks

Daehyun Kim, Tae-Woo Kim, H. Kwon, 2019, Japanese Journal of Applied Physics.

Scaling and carrier transport behavior of buried-channel In 0 . 7 Ga 0 . 3 As MOSFETs with Al 2 O 3 insulator

Daehyun Kim, Tae-Woo Kim, 2015 .

L $_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

Daehyun Kim, W. Maszara, C. Hobbs, 2015, IEEE Electron Device Letters.

Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress

Daehyun Kim, Tae-Woo Kim, H. Kwon, 2020 .

Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2

Daehyun Kim, J. Park, Jin Su Kim, 2016 .

Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD

Satyavolu S. Papa Rao, P. Hung, T. Orzali, 2015 .

In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec

Richard J. W. Hill, Hyuk-Min Kwon, Dae-Hyun Kim, 2014 .