H. Maher

发表

High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications

N. Wichmann, S. Bollaert, M. Ridaoui, 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

J. B. Webb, Haipeng Tang, H. Maher, 2000 .

Wet etching and its application to the fabrication and characterization of AlGaN/GaN HFETs

J. B. Webb, H. Maher, C. Bolognesi, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs

N. Bourzgui, K. Kalna, A. Soltani, 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

N. Bourzgui, K. Kalna, A. Soltani, 2017 .

Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

G. A. Koné, H. Maher, C. Maneux, 2012, 2012 International Conference on Indium Phosphide and Related Materials.

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Y. Cordier, C. Sonneville, A. Soltani, 2021, Energies.

Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

A. Soltani, H. Maher, G. Pavlidis, 2019, IEEE Transactions on Electron Devices.

Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution

A. Soltani, H. Maher, A. Cutivet, 2018, physica status solidi (a).

Resistive Nickel Temperature Sensor Integrated Into Short-Gate Length AlGaN/GaN HEMT Dedicated to RF Applications

H. Maher, A. Cutivet, J. De Jaeger, 2018, IEEE Electron Device Letters.

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

A. Soltani, A. Jaouad, H. Maher, 2021, Micromachines.

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

V. Aimez, A. Jaouad, H. Maher, 2014, IEEE Electron Device Letters.

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Y. Cordier, D. Planson, C. Sonneville, 2022, AIP Advances.

Doping optimizations for InGaAs/InP composite channel HEMTs

H. Maher, A. Falcou, J. Decobert, 1998 .

Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor

H. Maher, N. Cavassilas, J. Decobert, 2000 .

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Y. Cordier, A. Soltani, A. Jaouad, 2021, Semiconductor Science and Technology.

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2020 .

Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer

A. Soltani, A. Jaouad, H. Maher, 2017 .

Temperature Characterization of NDR in AlGaN/GaN HFETs

H. Maher, C. Bolognesi, E. Piner, 2001, 31st European Solid-State Device Research Conference.

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Y. Cordier, H. Maher, N. Malbert, 2021, Microelectronics Reliability.

Development of technological building blocks for the monolithic integration of ammonia‐MBE‐grown GaN‐HEMTs with silicon CMOS

V. Aimez, Y. Cordier, S. Chenot, 2016 .

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN‐HEMTs with CMOS

V. Aimez, Y. Cordier, H. Maher, 2015 .

Design Method of PCB Inductors for High-Frequency GaN Converters

A. Videt, N. Idir, H. Maher, 2021, IEEE Transactions on Power Electronics.

Thermal performance assessment in AlGaN/GaN structures by microsensor integration

V. Aimez, A. Jaouad, H. Maher, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

Haipeng Tang, J. Bardwell, H. Maher, 2000 .

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

V. Hoel, H. Maher, F. Lecourt, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

MONOLITHIC INTEGRATION OF RF MEMS SWITCH AND GAAS-MMIC PROCESS FOR RF SENSING APPLICATIONS

H. Maher, B. Grandchamp, P. Frijlink, 2012 .

Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices

N. Bourzgui, A. Soltani, A. Jaouad, 2022, Applied Physics Letters.

Sensors based on AlGaN/GaN HEMT for fast H2 and O2 detection and measurement at high temperature

N. Bourzgui, A. Ougazzaden, A. Soltani, 2019, 2019 IEEE SENSORS.

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

J. Brault, Y. Cordier, S. Chenot, 2021, Solid-State Electronics.

Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance

A. Soltani, H. Maher, A. Cutivet, 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

V. Hoel, H. Maher, A. Cutivet, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

A Manufacturable True E-Mode MHEMT with High Static and Dynamic Performances

H. Maher, M. Renvoise, P. Frijlink, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

A TRUE E-MODE MHEMT WITH HIGH STATIC AND DYNAMIC PERFORMANCES

H. Maher, P. Frijlink, P. Baudet, 2006 .

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

A. Soltani, H. Maher, A. Cutivet, 2018, physica status solidi (a).

Using flexible ferrite sheet to design PCB inductor for 1MHz GaN converter taking into account thermal issues

A. Videt, N. Idir, H. Maher, 2019, 2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS).

A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching

A. Soltani, A. Jaouad, H. Maher, 2018 .

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Micro and Nanostructures.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Microelectron. J..

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Y. Cordier, D. Planson, C. Sonneville, 2023, Crystals.

Excess gate leakage at low voltage in InP-based HEMTs

H. Maher, N. Cavassilas, A. Scavennec, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

H. Maher, P. Frijlink, S. Bouzid-Driad, 2013, IEEE Electron Device Letters.

Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl/sub 4/ plasma (ICP)

H. Maher, J. Decobert, J. Etrillard, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

H. Maher, J. Etrillard, Y. Nissim, 1999 .

Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

A. Soltani, H. Maher, M. Darnon, 2023, Journal of Vacuum Science & Technology A.

Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis

H. Maher, J. Tartarin, B. Franc, 2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC).

Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

V. Hoel, H. Maher, J. De Jaeger, 2012, 2012 7th European Microwave Integrated Circuit Conference.

0.2-$\mu{\rm m}$ InP/GaAsSb DHBT Power Performance With 10 ${\rm mW}/\mu{\rm m}^{2}$ and 25% PAE at 94 GHz

Marc Rocchi, Etienne Okada, Damien Ducatteau, 2014, IEEE Electron Device Letters.

Gallium Nitride Semiconductors in Power Electronics for Electric Vehicles: Advantages and Challenges

Joao P. Trovao, Maxime R. Dubois, Adrien Letellier, 2015, 2015 IEEE Vehicle Power and Propulsion Conference (VPPC).

A 200-GHz True E-Mode Low-Noise MHEMT

G. Dambrine, S. Lepilliet, H. Maher, 2007, IEEE Transactions on Electron Devices.

IMAGINE project: a low cost, high performance, monolithic passive mm-wave imager front-end

E. Limiti, H. Maher, V. Vassilev, 2012, Optics/Photonics in Security and Defence.

Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

H. Maher, G. Post, J. Courant, 2001 .

AlN grown by CBE for power device applications

H. Maher, R. Arès, B. Bouzazi, 2020, AIP Advances.

Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications

Maxime R. Dubois, Adrien Letellier, João Pedro F. Trovão, 2018, IEEE Transactions on Power Electronics.