C. Tung

K. Pey, C. Tung, D. Ang, 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

DBIE shape and hardness dependence on gate oxide breakdown location in MOSFET channel

K. Pey, W. Lin, C. Tung, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications

S. Balakumar, D. Kwong, Ming-Fu Li, 2006, IEEE Transactions on Electron Devices.

A nanoscale analysis of the leakage current in SiO2 breakdown

G. Lo, Gang Zhang, K. Pey, 2008 .

Schottky-like behavior of progressive breakdown of polycrystalline- silicon/silicon oxynitride gate dielectric stack

K. Pey, C. Tung, V. Lo, 2008 .

Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate

W. K. Choi, D. Chi, D. Antoniadis, 2006 .

A comprehensive model for breakdown mechanism in HfO/sub 2/ high-k gate stacks

G. Groeseneken, K. Pey, S. De Gendt, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics

K. Pey, W. Lin, C. Tung, 2004, IEEE Transactions on Device and Materials Reliability.

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

Ming Zhu, Yee-Chia Yeo, Tsung-Yang Liow, 2008, IEEE Electron Device Letters.

Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

Y. Yeo, N. Balasubramanian, A. Du, 2005 .

Effects of Annealing and Temperature on SGOI Fabrication Using Ge Condensation

S. Balakumar, G. Lo, D. Kwong, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

G. Groeseneken, K. Pey, S. Gendt, 2005 .

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

B. H. Koh, W. K. Choi, W. Chim, 2004 .

Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

S. Balakumar, D. Chi, Rui Li, 2006, 2006 International Workshop on Junction Technology.

Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate

S. Balakumar, G. Lo, D. Kwong, 2006 .

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO2/TaN gate stack

S. J. Wang, S. Balakumar, D. Kwong, 2006 .

Schottky Source/Drain Transistor on Thin SiGe on Insulator Integrated with HfO2/TaN Gate Stack

S. Balakumar, D. Kwong, D. Chi, 2006 .

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

S. Balakumar, N. Singh, G. Lo, 2008, IEEE Electron Device Letters.

Silicon dispersoid nucleation within the aluminum 1.0 wt. % silicon metallization alloy used in very large scale integration

C. Tung, S. Chiu, Cheng Chang, 1990 .

Laser-induced titanium disilicide formation for submicron technologies

A. See, Y. Chong, K. Pey, 2001 .

Pulse electroplating of copper film: a study of process and microstructure.

Zhong Chen, C. C. Wong, K. Tu, 2008, Journal of nanoscience and nanotechnology.

Pyramidal structural defects in erbium silicide thin films

Pooi See Lee, D. Chi, K. Pey, 2005, cond-mat/0510230.

Pulsed laser-induced silicidation on TiN-capped Co/Si bilayers

Pooi See Lee, K. Pey, C. Tung, 2006 .

Confinement and electron-phonon interactions of the E-1 exciton in self-organized Ge quantum dots

M. Li, C. Tung, P. Yu, 1999 .

Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure

Y. Yeo, G. Samudra, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

S. Balakumar, G. Lo, D. Kwong, 2006, 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Scanning tunneling microscopy study of nitrogen incorporated HfO2

K. Pey, C. Tung, D. Ang, 2008 .

Electronic trap characterization of the Sc2O3∕La2O3 high-κ gate stack by scanning tunneling microscopy

H. Iwai, K. Pey, K. Kakushima, 2008 .

Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization

D. R. Frear, King-Ning Tu, P. Elenius, 2000 .

Effects of substrate metallizations on solder/underbump metallization interfacial reactions in flip-chip packages during thermal aging

M. Li, C. Chum, C. Tung, 2003 .

Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry

P. Alkemade, C. Tung, Z. Jiang, 2000 .

Optimization of solder height and shape to improve the thermo-mechanical reliability of wafer-level chip scale packages

C. Tung, D. Shih, Chung-Jung Wu, 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

Generic rules to achieve bump electromigration immortality for 3D IC integration

C. Tung, D. Shih, C. Chen, 2013, 2013 IEEE 63rd Electronic Components and Technology Conference.

A flexible interconnect technology demonstrated on a wafer-level chip scale package

Doug C. H. Yu, C. J. Wu, C. Tung, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Electromigration immortality of purely intermetallic micro -bump for 3D integration

C. Tung, C. Chen, Larry C. Lin, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

New optical properties of Ge self-organized quantum dots

T. Sheng, C. Tung, Y. Zhang, 1998 .

Optical properties of Ge self-organized quantum dots in Si

Ying Zhang, T. Sheng, C. Tung, 1998 .

Comparison of the electromigration behaviors between micro-bumps and C4 solder bumps

C. C. Chiu, Doug C. H. Yu, C. C. Hsieh, 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

Phase change random access memory cell with superlattice-like structure

Tow Chong Chong, X. S. Miao, Rong Zhao, 2006 .

Improvement of Ge self-organized quantum dots by use of Sb surfactant

Y. Zhang, Qizhang Huang, T. Sheng, 1998 .

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

Y. Chong, K. Pey, A. Wee, 2006 .

Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires

G. Lo, Gang Zhang, K. Pey, 2009 .

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm

W. Fan, C. Tung, S. Yoon, 2007 .

High Aspect Ratio Nickel Structures Fabricated by Electrochemical Replication of Hydrofluoric Acid Etched Silicon

Yahong Xie, K. Tu, C. Tung, 2006 .

The effect of anodizing temperature on anodic oxide formed on pure Al thin films

C. Tung, Re-Long Chiu, P. Chang, 1995 .

Electromigration in copper damascene interconnects : reservoir effects and failure analysis

Ahila Krishnamoorthy, Chih-Hang Tung, A. V. Vairagar, 2005 .

The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

W. K. Choi, D. Chi, D. Antoniadis, 2004 .

N-type Schottky barrier source/drain MOSFET using ytterbium silicide

A. Chin, D. Kwong, A. Chin, 2004, IEEE Electron Device Letters.

Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition

Dim-Lee Kwong, N. Balasubramanian, Chih-Hang Tung, 2007 .

The nature of dielectric breakdown

Kin Leong Pey, Chih-Hang Tung, K. Pey, 2008 .

Polarity dependent breakdown of the high-κ/SiOx gate stack : A phenomenological explanation by scanning tunneling microscopy

H. Iwai, K. Pey, K. Kakushima, 2008 .

Bilayer gate dielectric study by scanning tunneling microscopy

Hiroshi Iwai, Cedric Troadec, Kuniyuki Kakushima, 2007 .

Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices

C. Tung, Zexiang Shen, C. Peng, 2003 .

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Albert Chin, D.S.H. Chan, Narayanan Balasubramanian, 2004 .

Silicide Formation from Laser Thermal Processing of Ti'Co Bilayers

Pooi See Lee, Y. Chong, K. Pey, 2004 .

Al2 O 3 Films Formed by Anodic Oxidation of Al‐1 Weight Percent Si‐0.5 Weight Percent Cu Films

C. Tung, Re-Long Chiu, P. Chang, 1995 .

Ultra High Density SoIC with Sub-micron Bond Pitch

M. F. Chen, Douglas C. H. Yu, W. Chiou, 2020, 2020 IEEE 70th Electronic Components and Technology Conference (ECTC).

Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si

W. D. Wang, D. Kwong, D. Chi, 2002 .

Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1−xGex/Si substrate

C. L. Dohrman, E. Fitzgerald, C. Tung, 2009 .

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs

N. Singh, G. Lo, D. Kwong, 2006, 2006 International Electron Devices Meeting.

Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length

G. Lo, Y. Yeo, D. Chi, 2006, 2006 International Electron Devices Meeting.

Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide

W. K. Choi, D. Chi, D. Antoniadis, 2005 .

Highly oriented Ni(Pd)SiGe formation at 400 °C

W. K. Choi, D. Antoniadis, M. Lee, 2005 .

Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications

D.S.H. Chan, N. Balasubramanian, D. Kwong, 2005, IEEE Electron Device Letters.

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

D.S.H. Chan, A. Chin, D. Kwong, 2004, IEEE Electron Device Letters.

Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

W. S. Lau, C. H. Tung, P. W. Qian, 2007, Microelectron. Reliab..

The radial distribution of defects in a percolation path

Kin Leong Pey, Chih-Hang Tung, K. Pey, 2008 .

Epitaxially grown n-ZnO/MgO/TiN/n(+)-Si(111) heterostructured light-emitting diode

X. M. Li, G. Lo, D. Kwong, 2008 .

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Y. Yeo, G. Samudra, N. Balasubramanian, 2007, IEEE Transactions on Electron Devices.

Advanced Monochromatic STEM for NanoElectronics Industry Applications

C. Tung, M. Bosman, C. K. Cheng, 2008 .

Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films

G. Lo, Gang Zhang, Mingbin Yu, 2008, IEEE Electron Device Letters.

The Superiority of N 2O Plasma Annealing over O 2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta 2O 5) Films

Paul K. Chu, W. S. Lau, Taejoon Han, 1998 .

Two Step O 2 /N 2 O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta 2 O 5 Films

T. Chong, P. Chu, C. Tung, 1999 .

Single‐Step Fabrication of Nickel Films with Arrayed Macropores and Nanostructured Skeletons

Yahong Xie, K. Tu, C. Tung, 2006 .

Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

C. L. Dohrman, E. Fitzgerald, C. Tung, 2006 .

Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices

D.S.H. Chan, J.F. Kang, J.D. Chen, 2003, IEEE International Electron Devices Meeting 2003.

Mechanism and prevention of spontaneous tin whisker growth

N. Tamura, K. Tu, C. Tung, 2005 .

ULSI Semiconductor Technology Atlas: Tung/ULSI Semiconductor

Chih-Yuan Lu, C. Tung, G. Sheng, 2005 .

ULSI Semiconductor Technology Atlas

Chih-Yuan Lu, C. Tung, G. Sheng, 2003 .

Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors

Y. Yeo, G. Samudra, N. Balasubramanian, 2007 .

Robust high-quality HfN-HfO/sub 2/ gate stack for advanced MOS device applications

D. Kwong, J. Kang, H. Yu, 2004, IEEE Electron Device Letters.

Cool copper template for the formation of oriented nanocrystalline α-tantalum

A. See, J. Sudijono, C. Tung, 2002 .

SiGe amorphization during Ge condensation in silicon germanium on insulator

Cheng Soon Ong, S. Balakumar, G. Lo, 2006 .

Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method

C. Tung, C. H. Tung, T. T. Sheng, 1997 .

Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi 2 Formation

S. Chua, K. Pey, C. Tung, 1999 .

A Thermally Friendly Bonding Scheme for 3D System Integration

Douglas C. H. Yu, C. Hsieh, C. Tung, 2023, Electronic Components and Technology Conference.

200 mm wafer-scale epitaxial transfer of single crystal Si on glass by anodic bonding of silicon-on-insulator wafers

W. H. Teh, D. Kwong, N. Balasubramanian, 2005 .

Ultra High Density Low Temperature SoIC with Sub-0.5 μm Bond Pitch

Douglas C. H. Yu, Chuei-Tang Wang, S. Tai, 2023, 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC).

The chemistry of gate dielectric breakdown

X. Li, V.L. Lo, K. Pey, 2008, 2008 IEEE International Electron Devices Meeting.

Nanoanalytical Characterization of Breakdown Spots in Ultrathin Gate Dielectrics

K. Pey, C. Tung, R. Ranjan, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern

W.H. Lin, K. Pey, W. Lin, 2002, Digest. International Electron Devices Meeting,.

Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

K. Pey, C. Tung, D. Ang, 2006, IEEE Transactions on Electron Devices.

Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

Kenneth Wu, J. R. Shih, J. Shih, 2009, IEEE International Reliability Physics Symposium.

Multiple Digital Breakdowns and Its Consequence on Ultrathin Gate Dielectrics Reliability Prediction

C.H. Tung, V.L. Lo, K.L. Pey, 2007, 2007 IEEE International Electron Devices Meeting.

Significance of Breakdown Location on Post-Breakdown Transient and MOSFET Degradation

K. Pey, C. Tung, D. Ang, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation

K. Pey, C. Tung, D. Ang, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms

Wai Kin Chim, B. H. Koh, Wee Kiong Choi, 2003 .

Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks

Chih-Hang Tung, E. Miranda, E. Miranda, 2008, IEEE Electron Device Letters.

Strained p-Channel FinFETs With Extended $\Pi$ -Shaped Silicon–Germanium Source and Drain Stressors

Yee-Chia Yeo, Tsung-Yang Liow, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

Yee-Chia Yeo, Tsung-Yang Liow, Chih-Hang Tung, 2006, IEEE Electron Device Letters.

High density 3D integration using CMOS foundry technologies for 28 nm node and beyond

C.H. Chang, T.J. Wu, W.C. Chiou, 2010, 2010 International Electron Devices Meeting.