R. Hill

发表

Fully self-aligned process for fabricating 100nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, I. Thayne, S. Thoms, 2009 .

Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays

Kei May Lau, Alexey Vert, Richard J. W. Hill, 2014 .

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

A. Asenov, I. Thayne, S. Thoms, 2007, IEEE Electron Device Letters.

More Moore or More than Moore

P. Kirsch, W. Loh, C. Kang, 2012 .

Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

A. Asenov, I. Thayne, K. Kalna, 2008, IEEE Electron Device Letters.

High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. D. del Alamo, 2013, IEEE Electron Device Letters.

High-Speed E-Mode InAs QW MOSFETs With Al 2 O 3 Insulator for Future RF Applications

P. Kirsch, Daehyun Kim, J. Alamo, 2013 .

Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow

P. Kirsch, W. Loh, P. Majhi, 2010, 2010 International Electron Devices Meeting.

Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs

G. Bersuker, P. D. Kirsch, K. Matthews, 2013, IEEE Transactions on Device and Materials Reliability.

InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax

D. Veksler, P. Kirsch, J. D. del Alamo, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Simulation of implant free III-V MOSFETs for high performance low power Nano-CMOS applications

A. Asenov, I. Thayne, K. Kalna, 2007 .

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

R. Hill, H. Harris, E. Piner, 2014 .

High Mobility III-V MOSFETs For RF and Digital Applications

A. Asenov, P. Fejes, X. Li, 2007, 2007 IEEE International Electron Devices Meeting.

Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices

A. R. Long, J. Wilson, I. Thayne, 2006 .

50nm gate-length hydrogen terminated diamond field effect transistors characterization and inspection of operation

R. Hill, D. Moran, H. McLelland, 2011 .

EFTEM and EELS SI: tools for investigating the effects of etching processes for III-V MOSFET devices

I. Thayne, R. Hill, P. Longo, 2008 .

VLSI processed InGaAs on Si MOSFETs with thermally stable, self-aligned Ni-InGaAs contacts achieving: Enhanced drive current and pathway towards a unified contact module

S. Deora, K. Matthews, P. Kirsch, 2013, 2013 IEEE International Electron Devices Meeting.

III–V gate stack interface improvement to enable high mobility 11nm node CMOS

Y. T. Chen, J. Woicik, G. Bersuker, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Deep sub-micron and self-aligned flatband III–V MOSFETs

A. Asenov, X. Li, M. Holland, 2009, 2009 Device Research Conference.

A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III–V Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8

M. Holland, I. Thayne, Xu Li, 2012 .

Enhancement mode n-MOSFET with high-κ dielectric on GaAs substrate

X. Li, I. Thayne, S. Thoms, 2007, 2007 65th Annual Device Research Conference.

Sub-10nm junction in InGaAs with sulfur mono-layer doping

P. Kirsch, W. Loh, R. Jammy, 2013, International Symposium on VLSI Technology, Systems, and Applications.

CMOS Scaling with III-V Channels for Improved Performance and Low Power

P. Kirsch, W. Loh, Jungwoo Oh, 2011 .

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Aras Norvilas, Joshua Herman, Alexey Vert, 2015 .

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Gennadi Bersuker, Richard J. W. Hill, Rinus T. P. Lee, 2013, IEEE Transactions on Electron Devices.

Backside and edge cleaning of III–V on Si wafers for contamination free manufacturing

T. Orzali, V. Kaushik, R. Hill, 2015, 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays

K. Lau, R. Hill, Qiang Li, 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

Advanced techniques for achieving ultra-shallow junctions in future CMOS devices

W. Loh, P. Majhi, R. Jammy, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

Iain G. Thayne, E. Boyd, Helen McLelland, 2004 .

A low damage Si3N4 sidewall spacer process for self-aligned sub-100nm III-V MOSFETs

C. Wilkinson, I. Thayne, Xu Li, 2008 .

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

D. Veksler, V. Tokranov, M. Yakimov, 2014 .

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Satyavolu S. Papa Rao, T. Orzali, R. Hill, 2015 .

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

P. D. Kirsch, K. Matthews, D.-H Kim, 2013, 2013 IEEE International Electron Devices Meeting.

Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

K. Saraswat, A. Nainani, P. Majhi, 2010 .

In0.7Ga0.3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of ∼60 mV/dec

Richard J. W. Hill, Hyuk-Min Kwon, Dae-Hyun Kim, 2014 .