Han Zhao

发表

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

Jack C. Lee, J. Yum, Han Zhao, 2009 .

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Jack C. Lee, J. Yum, Han Zhao, 2010 .

III–V MOSFETs with ALD High‐k Gate Dielectrics

Jack C. Lee, Han Zhao, 2012 .

A study of electrical and material characteristics of III-V MOSFETs and TFETs with high-[kappa] gate dielectrics

Han Zhao, 2010 .

Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2011 .

Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

Jack C. Lee, J. Yum, Han Zhao, 2009 .

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Jack C. Lee, I. Ok, J. Yum, 2009 .

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Jack C. Lee, Han Zhao, M. Hanna, 2012 .

Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics

Jack C. Lee, Manhong Zhang, I. Ok, 2007 .

Self-aligned In 0.53 Ga 0.47 As MOSFETs with atomic layer deposited Al 2 O 3 , ZrO 2 , and stacked Al 2 O 3 /ZrO 2 gate dielectrics

Jack C. Lee, Han Zhao, 2009 .

Self-aligned In0.53Ga0.47As MOSFETs with atomic layer deposited Al2O3, ZrO2, and stacked Al2O3/ZrO2 gate dielectrics

Jack C. Lee, Han Zhao, 2009, 2009 IEEE International Conference on IC Design and Technology.

Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

Jack C. Lee, G. Bersuker, D. Veksler, 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

In0.53Ga0.47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics

Jack C. Lee, J. Yum, Han Zhao, 2009 .

Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2011 .

Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2010 .

Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In0.7Ga0.3As MOSFETs

Jack C. Lee, S. Banerjee, Han Zhao, 2010, 68th Device Research Conference.

Effects of Fluorine Incorporation on the Electrical Properties of Atomic-Layer-Deposited Al2O3 Gate Dielectric on InP Substrate

Jack C. Lee, J. Yum, Han Zhao, 2010 .

Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics

Jack C. Lee, J. Yum, Han Zhao, 2009 .

Avalanche injection model for the lock‐on effect in III‐V power photoconductive switches

Martin A. Gundersen, P. Hadizad, J. H. Hur, 1993 .

InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2011 .

Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser

Han Zhao, J. Koh, Sung‐Jin Kim, 2021, Electronic Materials Letters.

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Jack C. Lee, Manhong Zhang, P. Majhi, 2008 .

Improved Electrical Properties of HfO2-Based Gate Dielectrics on InP Substrate Using Al2O3/HfO2 and SF6 Plasma Treatment

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2011 .

Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric

Jack C. Lee, S. Banerjee, I. Ok, 2008 .

Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs

G. Bersuker, D. Veksler, G. Verzellesi, 2012, IEEE Transactions on Electron Devices.

Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

Jack C. Lee, J. Yum, Han Zhao, 2009 .

$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

Y. Chen, Han Zhao, F. Zhou, 2010, IEEE Electron Device Letters.

Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

Han Zhao, Yen‐Ting Chen, Yanzhen Wang, 2012, IEEE Electron Device Letters.

Investigation of Surface Channel InGaAs MOSFETs with Al2O3 and ZrO2 ALD Gate Dielectric

Jack C. Lee, Han Zhao, Yen‐Ting Chen, 2010 .

Self-aligned n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization

Jack C. Lee, Manhong Zhang, I. Ok, 2009 .

Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Jack C. Lee, Manhong Zhang, P. Majhi, 2008 .

Sub-50-nm $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ MOSFETs With Various Barrier Layer Materials

Han Zhao, Yen‐Ting Chen, F. Zhou, 2012, IEEE Electron Device Letters.

Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer

Jack C. Lee, Manhong Zhang, I. Ok, 2007 .

Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

Jack C. Lee, Manhong Zhang, Jungwoo Oh, 2008 .