R. Iida

发表

Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2011 .

Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

N. Taoka, M. Takenaka, S. Takagi, 2013, IEEE transactions on device and materials reliability.

High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

N. Taoka, M. Takenaka, S. Takagi, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation

S. Takagi, M. Takenaka, T. Hoshii, 2011, 2011 International Electron Devices Meeting.

Nanosecond pulse laser scribing using Bessel beam for single shot removal of transparent conductive oxide thin film

Duc Hong Doan, R. Iida, K. Fushinobu, 2017 .

Laser-Microwave Double-Resonance Spectroscopy of Laser-Cooled ^9Be^+ Ions in a Weak Magnetic Field for Studying Unstable Be Isotopes

R. Iida, K. Okada, M. Wada, 1998 .

ALD Al2O3 activated direct wafer bonding for III–V CMOS photonics platform

M. Takenaka, S. Takagi, Y. Nakano, 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.

AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Mechanism of nanosecond laser drilling process of 4H-SiC for through substrate vias

Duc Hong Doan, R. Iida, K. Fushinobu, 2017, Applied Physics A.

Mechanism of TCO thin film removal process using near-infrared ns pulse laser: Plasma shielding effect on irradiation direction

R. Iida, K. Fushinobu, Byunggi Kim, 2016 .

Mechanism of nanosecond laser drilling process of 4H-SiC for through substrate vias

Duc Hong Doan, R. Iida, K. Fushinobu, 2017 .

DFT-NEGF Study of Electron Transfer Property in Graphene Nanoribbon Double Barrier System

R. Iida, M. Tomiya, S. Sakamoto, 2022, Journal of Physics: Conference Series.

Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors

N. Taoka, M. Takenaka, S. Takagi, 2016 .

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Osamu Ichikawa, 2013 .

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

S. Takagi, M. Takenaka, M. Yokoyama, 2010, 2010 International Electron Devices Meeting.

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Mitsuru Takenaka, Shinichi Takagi, Tetsuji Yasuda, 2013, IEEE Transactions on Nanotechnology.

Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

Mitsuru Takenaka, Shinichi Takagi, Ryo Iida, 2011 .

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

N. Taoka, M. Takenaka, S. Takagi, 2011, IEEE Electron Device Letters.

Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

N. Taoka, M. Takenaka, S. Takagi, 2011 .

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

N. Taoka, M. Takenaka, S. Takagi, 2011 .