S. Koh

发表

Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Ivana, Y. Yeo, C. Chia, 2011 .

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Chun-Yen Chang, Xiao Gong, Yee-Chia Yeo, 2011 .

A new self-aligned contact technology for III-V MOSFETs

Chun-Yen Chang, Y. Yeo, G. Luo, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs

Y. Yeo, G. Samudra, K. Sekar, 2009 .

Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

Y. Yeo, B. Liu, G. Samudra, 2011, IEEE Transactions on Electron Devices.

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors

Y. Yeo, G. Samudra, S. Koh, 2010 .

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Y. Yeo, B. Liu, S. Koh, 2013, IEEE Transactions on Electron Devices.

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Yee-Chia Yeo, Y. Yeo, Qian Zhou, 2013, IEEE Transactions on Electron Devices.

Contact Technology for Strained nFinFETs With Silicon–Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation

Y. Yeo, G. Samudra, S. Koh, 2012, IEEE Transactions on Electron Devices.

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Y. Yeo, G. Samudra, T. Henry, 2011 .

Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Y. Yeo, G. Samudra, Qian Zhou, 2011, 2011 International Electron Devices Meeting.

N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Yee-Chia Yeo, K. Sekar, W. Krull, 2008, IEEE Electron Device Letters.

GeTe Liner Stressor Featuring Phase-Change- Induced Volume Contraction for Strain Engineering of Sub-50-nm p-Channel FinFETs: Simulation and Electrical Characterization

Y. Yeo, B. Liu, Yue Yang, 2014, IEEE Transactions on Electron Devices.

A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs

Y. Yeo, B. Liu, S. Koh, 2012, 2012 Symposium on VLSI Technology (VLSIT).