R. Langer

发表

Bandlike and localized states of extended defects in n-type In0.53Ga0.47As

N. Collaert, C. Merckling, M. Heyns, 2018, Journal of Applied Physics.

Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width

K. Barla, A. Thean, N. Collaert, 2015 .

How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

Niamh Waldron, Robert Langer, Andreas Schulze, 2018, Semiconductor Science and Technology.

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

A. Hikavyy, E. Rosseel, B. Douhard, 2019, physica status solidi (a).

First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs

A. Hikavyy, K. Wostyn, H. Bender, 2018, IEEE Transactions on Electron Devices.

Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

L. Witters, N. Waldron, D. Mocuta, 2017, IEEE Transactions on Electron Devices.

Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

N. Collaert, N. Waldron, M. Heyns, 2019, Journal of Physics: Conference Series.

Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1−xAs buffers on GaAs

Robert Langer, Matty Caymax, Bernardette Kunert, 2016 .

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

N. Collaert, N. Waldron, B. Parvais, 2021, Materials.

Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

A. Hikavyy, E. Rosseel, B. Douhard, 2019, ECS Journal of Solid State Science and Technology.

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Gaudenzio Meneghesso, C. Gaquiere, Sylvain Delage, 2008 .

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

O. Richard, J. Van Campenhout, D. van Thourhout, 2020, Crystals.

A GaAsSb/InP HBT circuit technology

A. Konczykowska, R. Langer, C. Maneux, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

A GaAsSb/InP HBT ci

Route de Nozay, A. Konczykowska, R. Langer, 2005 .

Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

A. Hikavyy, R. Loo, L. Witters, 2019, Japanese Journal of Applied Physics.

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

D. Pavlidis, B. Damilano, R. Langer, 2003 .

GaN Layers Grown by MOCVD on Composite SiC Substrate

R. Langer, B. Pécz, M. Poisson, 2008 .

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

G. Meneghesso, E. Zanoni, V. Hoel, 2007, 2007 IEEE International Electron Devices Meeting.

GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes

A. Thean, N. Collaert, J. Mitard, 2016, IEEE Electron Device Letters.

Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

R. Langer, M. Poisson, J. Domagala, 2008 .

High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

A. Hikavyy, A. De Keersgieter, G. Mannaert, 2019, 2019 Symposium on VLSI Technology.

First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs

A. Hikavyy, K. Wostyn, H. Bender, 2018, 2018 IEEE Symposium on VLSI Technology.

Group IV Epi processing, evolution in CMOS from 90 to 10nm node

Robert Langer, Roger Loo, Wei Wang, 2014 .

Enhancing the defect contrast in ECCI through angular filtering of BSEs.

R. Loo, M. Caymax, W. Vandervorst, 2019, Ultramicroscopy.

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

S. Decoutere, D. Wellekens, R. Langer, 2022, Applied Physics Letters.

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

V. Hoel, A. Soltani, R. Langer, 2010 .

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering.

D. Thourhout, J. Campenhout, Y. Mols, 2022, Optics express.

Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

A. Thean, N. Collaert, J. Mitard, 2016 .

Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes

A. Thean, N. Collaert, J. Mitard, 2016, IEEE Transactions on Electron Devices.

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

W. Guo, Y. Mols, R. Langer, 2017 .

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Bin Tian, Robert Langer, Kathy Barla, 2016 .

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures

B. Douhard, O. Richard, D. Mocuta, 2018 .

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Study of electrically active defects in epitaxial layers on silicon

A. Hikavyy, K. Barla, R. Loo, 2016, 2016 China Semiconductor Technology International Conference (CSTIC).

Nano-ridge laser monolithically grown on (001) Si

D. Thourhout, J. Campenhout, Y. Mols, 2019, Future Directions in Silicon Photonics.

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

K. V. Kodandarama, G. Mannaert, N. Collaert, 2022, ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

M. Ingels, B. Parvais, L. Witters, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

(Invited) Integration of III/V Hetero-Structures By Selective Area Growth on Si for Nano- and Optoelectronics

Robert Langer, Kathy Barla, Bernardette Kunert, 2016 .

(Invited) Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts

A. Hikavyy, R. Loo, P. Favia, 2021, ECS Transactions.

Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

L. Witters, D. Mocuta, N. Collaert, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates

N. Collaert, N. Waldron, Y. Mols, 2021 .

Time-resolved photoluminescence characterization of InGaAs/GaAs nano-ridges monolithically grown on 300 mm Si substrates

J. Van Campenhout, D. van Thourhout, N. Gerhardt, 2020 .

Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations.

M. Caymax, W. Vandervorst, Han Han, 2019, Ultramicroscopy.