P. Ong

发表

Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

Naoto Horiguchi, Geert Hellings, Niamh Waldron, 2012 .

Replacement fin processing for III–V on Si: From FinFets to nanowires

Niamh Waldron, Nadine Collaert, Farid Sebaai, 2016 .

Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersions

S. Babu, P. Ong, L. Leunissen, 2012 .

Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

Shankar Kumar Selvaraja, Wim Bogaerts, Peter De Heyn, 2014, OFC 2014.

Integration of III-V on Si for High-Mobility CMOS

N. Horiguchi, A. Thean, C. Merckling, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

CMP processing of high mobility channel materials: Alternatives to Si

P. Ong, L. Teugels, 2016 .

Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2

S. Babu, P. Ong, L. Leunissen, 2011 .

The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source Doping

N. Horiguchi, T. Chiarella, Y. Kikuchi, 2017, IEEE Transactions on Electron Devices.

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

S. Babu, P. Ong, L. Leunissen, 2013 .

Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

Gang Wang, Wilfried Vandervorst, Marc Heyns, 2010 .

Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm node technology

J. Gill, M. Shinosky, T. Ema, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces

S. Babu, P. Ong, L. Leunissen, 2013 .

Chemical Mechanical Polishing of InP

S. Babu, P. Ong, L. Leunissen, 2012 .

CMP on SiGe materials — Linking chemical and physical properties to design low defect and selective slurries

Kevin Huang, P. Ong, L. Teugels, 2014, Proceedings of International Conference on Planarization/CMP Technology 2014.

Integrated electro-chemical mechanical planarization (Ecmp) for future generation device technology

L. Economikos, S. Tsai, Y. Moon, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

Advanced 300-mm waferscale patterning for silicon photonics devices with record low loss and phase errors

Shankar Kumar Selvaraja, Wim Bogaerts, Joris Van Campenhout, 2012 .

Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70–85% Ge

R. Loo, P. Ong, P. Storck, 2011 .

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Nadine Collaert, Farid Sebaai, 2014, IEEE Electron Device Letters.

Optimized Post-CMP and Pre-Epi Cleans to Enable Smooth and High Quality Epitaxial Strained Ge Growth on SiGe Strain Relaxed Buffers

R. Loo, P. Ong, L. Souriau, 2012 .

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Tackling CMP challenges related to the integration of III-V materials for <10nm node applications

Niamh Waldron, Patrick Ong, Lieve Teugels, 2015 .

Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid

S. Babu, P. Ong, L. Teugels, 2014 .