Gwang-Sik Kim

发表

Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Seung-Hwan Kim, Gwang-Sik Kim, S. Kim, 2018, Applied Surface Science.

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multi-Level Optic-Neural Synapse.

Krishna C. Saraswat, Jiyoung Kim, Hyun-Yong Yu, 2019, ACS nano.

Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior.

Jin-Hong Park, Gwang-Sik Kim, Hyun‐Yong Yu, 2019, ACS applied materials & interfaces.

Analytical study of polymer deposition distribution for two-dimensional trench sidewall in low-k fluorocarbon plasma etching process

Gwang-Sik Kim, S. Kim, Hyun‐Yong Yu, 2018 .

Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Krishna C. Saraswat, Changhwan Shin, Byung Jin Cho, 2015, IEEE Electron Device Letters.

Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors

B. Cho, Gwang-Sik Kim, Hyun‐Yong Yu, 2019, Applied Physics Letters.

Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack.

C. Shin, B. Cho, J. Shim, 2016, ACS applied materials & interfaces.

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

K. Saraswat, C. Shin, Jin-Hong Park, 2014, IEEE Electron Device Letters.

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States.

Seung-Hwan Kim, Gwang-Sik Kim, Hyun‐Yong Yu, 2018, ACS nano.

Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs

Seung-Hwan Kim, Gwang-Sik Kim, Hyun‐Yong Yu, 2018, IEEE Transactions on Electron Devices.

Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal–Interlayer–Semiconductor Source/Drain

C. Shin, Hyunjae Lee, B. Cho, 2016, IEEE Transactions on Electron Devices.

Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

R. Choi, Jin-Hong Park, C. Choi, 2016, IEEE Electron Device Letters.

Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium.

C. Shin, B. Cho, J. Shim, 2017, ACS Applied Materials and Interfaces.

Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure.

Seung-Hwan Kim, Gwang-Sik Kim, Hyun‐Yong Yu, 2019, ACS applied materials & interfaces.

Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure

C. Shin, B. Cho, Jin-Hong Park, 2016, IEEE Electron Device Letters.

Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

Seung-Hwan Kim, Gwang-Sik Kim, Hyun‐Yong Yu, 2018, IEEE Electron Device Letters.

The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction.

R. Choi, C. Choi, Seung-Hwan Kim, 2016, ACS applied materials & interfaces.

The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances

K. Saraswat, C. Shin, B. Cho, 2014, IEEE Electron Device Letters.

Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Seung-Hwan Kim, Gwang-Sik Kim, Hyun‐Yong Yu, 2021, Advanced science.

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

C. Shin, B. Cho, Gwang-Sik Kim, 2016, IEEE Electron Device Letters.

Fermi-Level Unpinning Using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

C. Shin, Jin-Hong Park, C. Choi, 2015, IEEE Electron Device Letters.

Analytical Study of Interfacial Layer Doping Effect on Contact Resistivity in Metal-Interfacial Layer-Ge Structure

K. Saraswat, C. Shin, Jin-Hong Park, 2014, IEEE Electron Device Letters.