A. Vantomme

发表

(Invited) Exploring the ALD Al2O3/In0.53Ga0.47As and Al2O3/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

H. Bender, N. Waldron, M. Caymax, 2010 .

Lithium Diffusion in Copper.

J. Fransaer, A. Vantomme, A. Vlad, 2019, The journal of physical chemistry letters.

Specular and off-specular Synchrotron Mossbauer Reflectometry: Applications to thin film magnetism

J. Swerts, O. Leupold, K. Temst, 2002 .

Size-dependent optical properties of colloidal PbS quantum dots.

I. Moreels, A. Vantomme, C. Delerue, 2009, ACS nano.

Size-Dependent Optical Properties of Zinc Blende Cadmium Telluride Quantum Dots

Qiang Zhao, A. Vantomme, Z. Hens, 2012 .

Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer.

J. Fransaer, G. Kothleitner, A. Vantomme, 2012, Physical chemistry chemical physics : PCCP.

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

J. G. Correia, A. Vantomme, M. Kappers, 2021, Advanced Electronic Materials.

Defect accumulation during channeled erbium implantation into GaN

A. Vantomme, B. Pipeleers, S. Hogg, 2005 .

Implantation angle dependence of ion irradiation damage in GaN

K. Nordlund, A. Vantomme, J. Nord, 2003 .

Zn distribution and location, luminescence measurement after Zn channeled implantation in GaN and RTA annealing

I. Moerman, A. Vantomme, G. Adriaenssens, 2003 .

Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS

I. Moerman, A. Vantomme, Qiang Zhao, 2003 .

Direct evidence for implanted Fe on substitutional Ga sites in GaN

A. Vantomme, G. Langouche, L. G. D. Peralta, 2001 .

Influence of SiGe Thickness on the Co/SiGe/Si Solid State Reaction

H. Bender, K. Maex, R. Donaton, 1999 .

Extreme lowering of the Debye temperature of Sn nanoclusters embedded in thermally grown SiO2 by low-lying vibrational surface modes

A. Vantomme, H. Pattyn, G. Koops, 2004 .

Artificial neural networks for instantaneous analysis of real-time Rutherford backscattering spectra

K. Temst, A. Vantomme, N. Barradas, 2010 .

Spin structure in perpendicularly magnetized Fe-FePt bilayers

K. Temst, B. Laenens, A. Vantomme, 2010 .

PbS/CdS Core/Shell Quantum Dots by Additive, Layer-by-Layer Shell Growth

Qiang Zhao, A. Vantomme, L. Sagar, 2016 .

Off-Specular Synchrotron Mössbauer Reflectometry: A Novel Tool for Studying the Domain Structure in Antiferromagnetic Multilayers

O. Leupold, B. Degroote, A. Vantomme, 2002 .

Passivation of cobalt nanocluster assembled thin films with hydrogen

A. Volodin, C. V. Haesendonck, A. Vantomme, 2012 .

Proposal to the ISOLDE and Neutron Time-of-Flight Committee Emission channeling with short-lived isotopes ( EC-SLI ) of acceptor dopants in nitride semiconductors 10 . 1

K. Temst, A. Vantomme, U. Wahl, 2017 .

Proposal to the ISOLDE and Neutron Time-of-Flight Committee Emission Channeling with Short-Lived Isotopes : lattice location of impurities in semiconductors and oxides 25 . 9 . 2013

K. Temst, J. Araújo, A. Vantomme, 2013 .

Concentration-controlled phase selection of silicide formation during reactive deposition

J. Dekoster, A. Vantomme, G. Langouche, 1999 .

Multidimensional Purcell effect in an ytterbium-doped ring resonator

D. Bouwmeester, J. Bowers, M. Heck, 2016, Nature Photonics.

Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As

K. Temst, R. Campion, J. Araújo, 2015 .

Tailored Ag-Cu-Mg multielemental nanoparticles for wide-spectrum antibacterial coating.

A. Vantomme, R. Brescia, R. Ferrando, 2019, Nanoscale.

Determination of the dominant diffusing species during nickel and palladium germanide formation

C. Detavernier, A. Vantomme, D. Smeets, 2012 .

The role of composition and microstructure in Ni–W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si

C. Detavernier, K. Temst, A. Vantomme, 2017 .

Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films

R. Loo, M. Heyns, K. Temst, 2015 .

Ion beam modification of the Ni-Si solid-phase reaction: The influence of substrate damage and nitrogen impurities introduced by ion implantation

K. Temst, A. Vantomme, L. Pereira, 2020, Journal of Physics D: Applied Physics.

Formation of ultrathin Ni germanides: solid-phase reaction, morphology and texture

C. Detavernier, K. Temst, A. Vantomme, 2017 .

The influence of Pt redistribution on Ni1-xPtxSi growth properties

C. Detavernier, K. Temst, A. Vantomme, 2010 .

Implantation-induced damage in Ge: strain and disorder profiles during defect accumulation and recovery

A. Vantomme, S. Decoster, 2009 .

Lattice location and optical activation of rare earth implanted GaN

A. Vantomme, E. Alves, T. Monteiro, 2003 .

Cooperative Catalysis for Multistep Biomass Conversion with Sn/Al Beta Zeolite

Y. Pontikes, L. Giebeler, S. Oswald, 2015 .

The use of XAFS to determine the nature of interaction of iron and molybdenum metal salts within PS-b-P2VP micelles.

A. Beale, A. Vantomme, A. Hardy, 2013, Physical chemistry chemical physics : PCCP.

Pt redistribution during Ni"Pt… silicide formation

C. Detavernier, A. Vantomme, N. Barradas, 2008 .

Phase formation in intermixed Ni-Ge thin films: influence of Ge content and low-temperature nucleation of hexagonal nickel germanides

C. Detavernier, S. Bals, A. Vantomme, 2014 .

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

C. Detavernier, J. Jordan-Sweet, C. Lavoie, 2016 .

Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - implanted GaN

A. Vantomme, E. Alves, R. Martin, 2003 .

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

B. Holländer, M. Nicolet, A. Vantomme, 1994 .

Damage and strain in epitaxial GexSi1−x films irradiated with Si

Kang L. Wang, M. Nicolet, A. Vantomme, 1993 .

Ion-induced roughening and ripple formation on polycrystalline metallic films

K. Temst, W. Vandervorst, A. Vantomme, 2013 .

Ion-induced pattern formation on indium tin oxide for alignment of liquid crystals

C. Glorieux, K. Temst, W. Vandervorst, 2015 .

Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers

R. Loo, W. Vandervorst, A. Vantomme, 2016 .

High-temperature AlN interlayer for crack-free AlGaN growth on GaN

A. Vantomme, Qian Sun, Shengqiang Zhou, 2008 .

Oxide reduced silicon nanowires

M. Topič, A. Vantomme, J. Bollmann, 2018 .

Optical energies of AlInN epilayers

Kon-Well Wang, A. Vantomme, E. Alves, 2008 .

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

A. Vantomme, E. Alves, R. Martin, 2006 .

Tuning size and coverage of Pd nanoparticles using atomic layer deposition

C. Detavernier, D. Hermida-Merino, A. Vantomme, 2021 .

Surface quality studies of high-Tc superconductors of the Hg-, Tl- and HgxTl1−x-families: RBS and resonant C and O backscattering studies

P. Toulemonde, A. Vantomme, P. Bordet, 2002 .

Annealing behavior and lattice site location of Er implanted InGaN

A. Vantomme, E. Alves, S. Pereira, 2003 .

Irradiation-induced damage in porous low-k materials during low-energy heavy-ion elastic recoil detection analysis

H. Bender, F. Iacopi, T. Sajavaara, 2006 .

Binding of phosphonic acids to CdSe quantum dots : a solution NMR study

Qiang Zhao, A. Vantomme, Z. Hens, 2011 .

Lattice Sites and Stability of Implanted Er in FZ and CZ Si

A. Vantomme, G. Langouche, U. Wahl, 1997 .

Impact of magnetization and hyperfine field distribution on high magnetoelectric coupling strength in BaTiO3-BiFeO3 multilayers.

K. Temst, H. P. Gunnlaugsson, A. Vantomme, 2018, Nanoscale.

Correlation of High Magnetoelectric Coupling with Oxygen Vacancy Superstructure in Epitaxial Multiferroic BaTiO3-BiFeO3 Composite Thin Films

K. Temst, A. Vantomme, M. Grundmann, 2016, Materials.

Step decoration during deposition of Co on Ag(001) by ultralow energy ion beams

B. Degroote, A. Vantomme, G. Langouche, 1999 .

Er-O clustering and its influence on the lattice sites of Er in Si

J. Araújo, A. Vantomme, G. Langouche, 1999 .

The influence of oxygen on the lattice sites of rare earths in silicon

A. Vantomme, G. Langouche, U. Wahl, 1998 .

DIRECT EVIDENCE FOR TETRAHEDRAL INTERSTITIAL ER IN SI

A. Vantomme, G. Langouche, J. Marques, 1997 .

Surface Chemistry of CdTe Quantum Dots Synthesized in Mixtures of Phosphonic Acids and Amines: Formation of a Mixed Ligand Shell

Qiang Zhao, A. Vantomme, Z. Hens, 2013 .

Letter of Intent to the ISOLDE and Neutron Time-of-Flight Committee Characterization of the low-energy

J. P. Ramos, Ľ., M. L., 2017 .

The Surface Chemistry of Colloidal HgSe Nanocrystals, toward Stoichiometric Quantum Dots by Design

Qiang Zhao, A. Vantomme, L. Sagar, 2018, Chemistry of Materials.

Magnesium-Vacancy Optical Centers in Diamond

J. G. Correia, P. Olivero, A. Vantomme, 2022, ACS photonics.

Epitaxial Coherence at Interfaces as Origin of High Magnetoelectric Coupling in Multiferroic BaTiO3–BiFeO3 Superlattices

K. Temst, A. Vantomme, M. Grundmann, 2016 .

Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations

K. Temst, A. Vantomme, M. Grundmann, 2015 .

Less is more. Cation exchange and the chemistry of the nanocrystal surface.

Qiang Zhao, A. Vantomme, L. Sagar, 2014, ACS nano.

Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization

G. Beyer, A. Satta, K. Maex, 2000 .

Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths

A. Vantomme, U. Wahl, E. David-Bosne, 2020 .

Selective removal of N-heterocyclic aromatic contaminants from fuels by lewis acidic metal-organic frameworks.

K. Temst, C. Serre, D. D. De Vos, 2011, Angewandte Chemie.

Hydrogen-induced Ostwald ripening at room temperature in a Pd nanocluster film.

A. Vantomme, M. Di Vece, D. Grandjean, 2008, Physical review letters.

Stable and metastable iron silicide phases on Si(100)

M. Caymax, J. Dekoster, A. Vantomme, 2005 .

Anisotropic diffusion in FePt thin films

B. Laenens, A. Vantomme, M. Leitner, 2012 .

Anisotropic lattice dynamics of FePt L1 0 thin films

K. Temst, B. Laenens, A. Vantomme, 2010 .

Direct evidence of Be as an amphoteric dopant in GaN

A. Vantomme, M. Kappers, U. Wahl, 2022, Physical Review B.

Alternative approach to populate and study the Th229 nuclear clock isomer

V. Manea, S. Cottenier, V. Fedosseev, 2019, Physical Review C.

New approaches for formation of ultra-thin PtSi layers for infrared applications

H. Bender, K. Maex, K. Baert, 1998 .

Enhancement of ALCVD TM TiN growth on Si-O-C and α-SiC:H films by O 2 -based plasma treatments

O. Richard, H. Bender, A. Satta, 2002 .

Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3–CoFe2O4 nanocomposite thin films

K. Temst, A. Volodin, M. Bisht, 2016 .

Electron emission channeling with position-sensitive detectors

S. Cardoso, A. Vantomme, G. Langouche, 1998 .

Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C

A. Vantomme, G. Langouche, J. Marques, 1997 .

Lattice location of implanted Cu in highly doped Si

J. Araújo, A. Vantomme, G. Langouche, 2000 .

Frequency-dependent stimulated and post-stimulated voltage control of magnetism in transition metal nitrides: towards brain-inspired magneto-ionics

J. L. Costa-Krämer, A. Vantomme, J. Meersschaut, 2022, Materials horizons.

Pd as a promoter to reduce Co cluster films at room temperature

A. Vantomme, A. Cabrera, P. Lievens, 2010 .

Defect production in strained p-type Si1−xGex by Er implantation

F. D. Auret, A. Vantomme, M. Mamor, 2011 .

Deep level properties of erbium implanted epitaxially grown SiGe

F. D. Auret, F. Meyer, A. Vantomme, 1999 .

Strain analysis in ultrathin silicide layers in Fe∕CsCl–FeSi57∕Fe sandwiches

S. Cottenier, A. Vantomme, J. Meersschaut, 2004 .

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic Ge x Si 1-x Films Grown on Si (100)

M. Nicolet, Kang L. Wang, A. Vantomme, 1992 .

Strain and orientation in epitaxial CoSi2(111) layers formed by ion implantation

A. Vantomme, G. Langouche, Y. Bruynseraede, 1991 .

Multiferroic BaTiO3–BiFeO3 composite thin films and multilayers: strain engineering and magnetoelectric coupling

K. Temst, A. Volodin, A. Vantomme, 2014 .

Observation of the radiative decay of the ^229Th nuclear clock isomer

C. Merckling, V. Manea, T. Schumm, 2022, Nature.

Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200 nm

K. Temst, R. Spreeuw, A. Vantomme, 2018, Journal of Applied Physics.

Critical size for exchange bias in ferromagnetic-antiferromagnetic particles

C. Afonso, K. Temst, A. Vantomme, 2005 .

LATTICE SITES AND DAMAGE ANNEALING OF IMPLANTED Tm AND Er IN Si

A. Vantomme, G. Langouche, J. Marques, 1997 .

Electron scattering in Au films containing Co clusters

K. Temst, C. V. Haesendonck, W. Bras, 2008 .

Growth of Co ON Ag(100): A Comparison of Ultra Low Energyion Beam Deposition and Thermal Deposition

A. Vantomme, G. Langouche, S. Degroote, 1999 .

Practical limits for detection of ferromagnetism using highly sensitive magnetometry techniques

K. Temst, J. Araújo, A. Vantomme, 2011 .

Diffusion, nucleation and reaction in a three-component system: Fe on Si(111)-‘5×5’–Cu

A. Vantomme, D. Smeets, K. Paredis, 2009 .

Thin film growth using hyperthermal ions: a surface morphology study

B. Degroote, A. Vantomme, H. Pattyn, 2004 .

Hyperfine interaction studies with monolayer depth resolution using ultra-low energy radioactive ion beams

B. Degroote, A. Vantomme, J. Meersschaut, 2002 .

Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry

W. Vandervorst, A. Delabie, A. Vantomme, 2022, Scientific Reports.

RTA-Preparation of β-FeSi 2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates

J. Dekoster, A. Vantomme, G. Langouche, 1995 .

Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si

M. Potter, A. Vantomme, G. Langouche, 1989 .

Calibration of PIXE yields using binary thin films on Si

W. Vandervorst, M. Popovici, A. Vantomme, 2014 .

Thin film growth of semiconducting Mg2Si by codeposition

K. Temst, C. V. Haesendonck, J. Mahan, 1997 .

An Inner-/Outer-Sphere Stabilized Sn Active Site in β-Zeolite: Spectroscopic Evidence and Kinetic Consequences

M. Dusselier, W. Janssens, B. Sels, 2016 .

The Removal of Copper Oxides by Ethyl Alcohol Monitored In Situ by Spectroscopic Ellipsometry

G. Beyer, A. Satta, K. Maex, 2003 .

Light Absorption Coefficient of CsPbBr3 Perovskite Nanocrystals.

Qiang Zhao, A. Vantomme, Z. Hens, 2018, The journal of physical chemistry letters.

Lattice Location of Implanted 147Nd and 147*Pm in GaN Using Emission Channeling

A. Vantomme, U. Wahl, J. Correia, 2003 .

Electric Polarity‐Dependent Modification of the Fe/BaTiO3 Interface

K. Temst, J. Locquet, M. Bisht, 2016 .

The superconducting proximity effect in epitaxial Al/Pb nanocomposites

Hong Wang, K. Temst, S. Bals, 2013 .

Direct observation of preferential heating near grain boundaries in patterned silicide films

K. Maex, A. Volodin, C. V. Haesendonck, 2010 .

Liquid-Phase Adsorption of Sulfur on Germanium: Reaction Mechanism and Atomic Geometry

H. Boyen, K. Temst, B. Beckhoff, 2013 .

Emission channeling experiments from the decay of 149Gd to 149Eu in GaN

A. Vantomme, U. Wahl, J. Correia, 2003 .

Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN

A. Vantomme, R. Moncorgé, J. Doualan, 2003 .

Tuning of the size and the lattice parameter of ion-beam synthesized Pb nanoparticles embedded in Si

K. Temst, S. Bals, W. Bras, 2012 .

Artificial neural networks applied to the analysis of synchrotron nuclear resonant scattering data.

K. Temst, B. Laenens, A. Vantomme, 2010, Journal of synchrotron radiation.

On the formation and structural properties of hexagonal rare earth (Y, Gd, Dy, Er and Yb) disilicide thin films

C. Detavernier, J. Jordan-Sweet, C. Lavoie, 2014 .

Compound phase formation in thin film structures

André Vantomme, James W. Mayer, A. Vantomme, 1999 .

Low temperature ion beam mixing of Co/Si systems

A. Vantomme, G. Langouche, 1992 .

Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi 2 Synthesis

O. Conde, A. Vantomme, H. Kung, 1995 .

Reactive deposition epitaxy of crsi2

M. Nicolet, J. Mahan, A. Vantomme, 1993 .

CO SILICIDE FORMATION ON SIGEC/SI AND SIGE/SI LAYERS

J. Sturm, K. Maex, R. Donaton, 1997 .

On the thermal expansion coefficient of CoSi2 and NiSi2

André Vantomme, Jan D'Haen, J. D’Haen, 2009 .

Heteroepitaxial relationships for CrSi2 thin films on Si(111)

M. Nicolet, J. Mahan, A. Vantomme, 1995 .

Epitaxial ternary RexMo1−xSi2 thin films on Si(100)

M. Nicolet, J. Mahan, A. Vantomme, 1994 .

The Template Technique Applied to Epitaxial Growth of CrSi 2 on Silicon (111)

M. Nicolet, A. Vantomme, Robert G. Long, 1993 .

Impurity-enhanced solid-state amorphization: the Ni–Si thin film reaction altered by nitrogen

C. Detavernier, K. Temst, A. Vantomme, 2019, Journal of Physics D: Applied Physics.

Self-diffusion of iron in L10-ordered FePt thin films

A. Vantomme, J. Meersschaut, R. Rüffer, 2006 .

Epitaxial CoSi2 films on Si(100) by solid‐phase reaction

M. Nicolet, A. Vantomme, N. Theodore, 1994 .

Magnetic Transitions and Magneto-Transport in Epitaxial Pr0.5Sr0.5MnO3 Thin Films

G. Kido, A. Vantomme, R. Vullers, 1996 .

Ternary CoxFe(1−x)Si2 and NixFe(1−x)Si2 formed by ion implantation in silicon

H. Bender, A. Vantomme, S. Jin, 2002 .

Metastable iron silicide phase formation by pulsed laser annealing

O. Richard, H. Bender, A. Vantomme, 2004 .

Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) : nucleation and solid solubility of the monosilicides

C. Detavernier, K. Temst, D. Deduytsche, 2017 .

Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time

C. Detavernier, C. Lavoie, D. Deduytsche, 2008 .

The role of lattice mismatch and kinetics in texture development: Co1−xNixSi2 thin films on Si(100)

C. Detavernier, C. Lavoie, A. Vantomme, 2008 .

Structural characterization of ion‐beam synthesized NiSi2 layers

H. Bender, K. Temst, A. Vantomme, 1995 .

Determination of different orientations in epitaxial silicide layers using X-ray diffraction

A. Vantomme, G. Langouche, Y. Bruynseraede, 1991 .

Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantation

K. Maex, A. Vantomme, G. Langouche, 1990 .

Aligned and twinned orientations in epitaxial cosi2 layers

A. Vantomme, G. Langouche, Y. Bruynseraede, 1990 .

Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)

H. Bender, A. Vantomme, S. Jin, 1999 .

Channeled ion beam synthesis of heteroepitaxial Nd0.32Y0.68Si1.7 layers

A. Vantomme, G. Langouche, H. Pattyn, 1998 .

Epitaxial growth of Gd silicides prepared by channeled ion implantation

H. Bender, A. Vantomme, G. Langouche, 1997 .

The Influence of Implantation-Induced Non-Stoichionetry on the Epitaxial Recrystallization of CoSi 2

A. Vantomme, G. Langouche, M. Ridgway, 1993 .

Comparative study of 57Fe in CoSi2 after direct ion implantation and after ion implantation of a radioactive parent

A. Vantomme, G. Langouche, I. Dézsi, 1990 .

Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and rutherford backscattering spectroscopy

K. Maex, A. Vantomme, G. Langouche, 1989 .

Mössbauer spectroscopy and rutherford backscattering study of Co-Silicide surface layers on Si

A. Vantomme, G. Langouche, I. Dézsi, 1988 .

Simultaneous real-time x-ray diffraction spectroscopy, Rutherford backscattering spectrometry, and sheet resistance measurements to study thin film growth kinetics by Kissinger plots

C. Detavernier, C. Lavoie, D. Deduytsche, 2008 .

Formation of buried CoSi2 layers by ion implantation and their stability at high temperatures

K. Maex, A. Vantomme, G. Langouche, 1989 .

Importance of channeled implantation to the synthesis of erbium silicide layers

A. Vantomme, G. Langouche, H. Pattyn, 1995 .

Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis

A. Vantomme, S. Hogg, Mf Wu, 2002 .

X‐ray‐diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion‐beam synthesis

A. Vantomme, G. Langouche, H. Pattyn, 1996 .

Single and double buried epitaxial metallic layers in Si prepared by ion implantation

A. Vantomme, G. Langouche, Mf Wu, 1992 .

Structural properties of thin silicide layers formed by high-dose metal implantation

A. Vantomme, G. Langouche, Y. Bruynseraede, 1991 .

Orientation and strain of single and double CoSi2 epitaxial layers formed by ion implantation

K. Maex, A. Vantomme, G. Langouche, 1991 .

CoSi 2 formation from Co x Ni 1-x /Ti system

A. Lauwers, K. Maex, A. Vantomme, 2002 .

In situ X-ray Diffraction Study of Ni–Yb Interlayer and Alloy Systems on Si„100

C. Detavernier, J. Jordan-Sweet, C. Lavoie, 2010 .

Epitaxy of cosi2/si(100) - from co/ti/si(100) to reactive deposition epitaxy

J. Dekoster, A. Vantomme, G. Langouche, 1995 .

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

C. Detavernier, K. Temst, W. Vandervorst, 2013 .

In situ study of the formation of silicide phases in amorphous Co-Si mixed layers

C. Detavernier, J. Jordan-Sweet, A. Vantomme, 2010 .

Effect of high temperature deposition on CoSi2 phase formation

C. Detavernier, G. Tendeloo, A. Vantomme, 2013 .

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

H. Bender, J. Sturm, K. Maex, 1996 .

Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation

H. Bender, A. Vantomme, G. Langouche, 1998 .

Characterization of Si(111) crystals implanted with Sb+ ions and annealed by rapid thermal processing

T. Laoui, A. Vantomme, G. Roebben, 2003 .

Coexistence of superconductivity and ferromagnetism in cluster-assembled Sn–Co nanocomposites

K. Temst, A. Vantomme, E. Menéndez, 2015 .

Exchange bias induced by O ion implantation in ferromagnetic thin films

K. Temst, A. Vantomme, E. Menéndez, 2012 .

Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements.

K. Temst, A. Vantomme, E. Menéndez, 2011, The Review of scientific instruments.

Exchange bias by implantation of O ions into Co thin films

K. Temst, C. V. Haesendonck, A. Vantomme, 2010 .

Changing the three-dimensional magnetization exchange coupling of mixed Fe and V nanoclusters with hydrogen

T. Verbiest, A. Vantomme, M. Vece, 2009 .

Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography.

K. Temst, A. Vantomme, E. Menéndez, 2017, Small.

Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices

H. Boyen, K. Temst, B. Beckhoff, 2013 .

50 years of ion channeling in materials science

A. Vantomme, 2016 .

Position-sensitive Si pad detectors for electron emission channeling experiments

P. Weilhammer, F. Schopper, P. Jalocha, 2004 .

Stability and diffusion of Hg implanted YBa2Cu3O6+x

V. Galindo, J. Araújo, A. Vantomme, 1999 .

Stability studies of Hg implanted YBa2Cu3O6+x

V. Galindo, J. Araújo, A. Vantomme, 1999 .

Magnetic properties of single crystalline expanded austenite obtained by plasma nitriding of austenitic stainless steel single crystals.

K. Temst, A. Vantomme, J. Santiso, 2013, ACS applied materials & interfaces.

Formation of buried and surface CoSi2 layers by ion implantation

K. Maex, A. Vantomme, G. Langouche, 1990 .

Lithium Diffusion in Copper: Supporting Information

J. Fransaer, A. Vantomme, A. Vlad, 2019 .

Dynamical properties of ordered Fe-Pt alloys

Paweł T. Jochym, K. Temst, A. Vantomme, 2015, 1501.05550.

Lattice position and thermal stability of diluted As in Ge

Ulrich Wahl, João D.G. Correia, T. M. Mendonça, 2012 .

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

O. Richard, H. Bender, K. Temst, 2016 .

The influence of phonon softening on the superconducting critical temperature of Sn nanostructures

K. Temst, A. Vantomme, E. Alp, 2020, Scientific Reports.

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

K. Temst, T. Conard, J. Locquet, 2014 .

Single Crystalline GeSn On Silicon By Solid Phase Crystallization

J. Locquet, A. Vantomme, J. Seo, 2013 .

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE Facility

K. Temst, J. Araújo, A. Vantomme, 2015 .

Ion channeling study of cavities in silicon formed by He implantation

A. Vantomme, G. Langouche, H. Pattyn, 1997 .

Interpreting Mössbauer spectra reflecting an infinite number of sites: an application to Fe1-xSi synthesized by pulsed laser annealing

S. Cottenier, A. Vantomme, A. Falepin, 2006 .

Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films

T. Sajavaara, W. Vandervorst, A. Vantomme, 2008 .

Adsorption of O2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure

C. Merckling, K. Temst, S. Sioncke, 2012 .

Self-Affine Surface Roughness of Chemically and Thermally Cleaned Ge(100) Surfaces

K. Temst, B. Beckhoff, S. Sioncke, 2011 .

Towards Passivation of Ge(100) Surfaces by Sulfur Adsorption from a (NH4)2S Solution: A Combined NEXAFS, STM and LEED Study

Marc Meuris, Philipp Hönicke, André Vantomme, 2011 .

Depth resolution optimization for low-energy ERDA

T. Sajavaara, W. Vandervorst, A. Vantomme, 2007 .

A generalized fitting tool for analysis of two-dimensional channeling patterns

A. Vantomme, U. Wahl, E. David-Bosne, 2020 .

Recent Emission Channeling Studies in Wide Band Gap Semiconductors

A. Vantomme, E. Alves, J. Soares, 2004 .

Multipurpose setup for low-temperature conversion electron Mössbauer spectroscopy.

K. Temst, H. P. Gunnlaugsson, A. Vantomme, 2017, The Review of scientific instruments.

Silicon and transition metal-silicides implanted with57Fe

A. Vantomme, G. Langouche, I. Dézsi, 1990 .

Growth mechanism and optical properties of semiconducting Mg 2 Si thin films

André Vantomme, John E. Mahan, Guido Langouche, 1999 .

Ultrathin Fe layers on Ag (100) surface

B. Degroote, A. Vantomme, I. Dézsi, 2007 .

On the preferential location of Co in

L. Dobrzyński, A. Vantomme, G. Langouche, 1996 .

Mössbauer spectroscopy on bent Si crystals

A. Vantomme, G. Langouche, S. Degroote, 1996 .

Annealing effect on the optical properties and interdiffusion of MgO/Zr/MgO multilayered selective solar absorber coatings

M. Maaza, K. Kaviyarasu, A. Vantomme, 2015 .

The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111)-√3 x √3-Au

A. Vantomme, D. Smeets, K. Paredis, 2009, Nanoscale research letters.

Fe-silicide nanostructures on Si(111)-3×3-Ag

A. Vantomme, K. Paredis, K. Vanormelingen, 2005 .

The influence of surface steps on the formation of Ag-induced reconstructions on Si(111)

A. Vantomme, K. Paredis, K. Vanormelingen, 2005 .

Sn nanoclusters formed in thermally grown SiO2 studied by Mössbauer spectroscopy

A. Vantomme, H. Pattyn, G. Koops, 2001 .

Interplay between structural and magnetic properties of L10-FePt(001) thin films directly grown on MgO(001)

K. Temst, B. Laenens, A. Vantomme, 2009 .

Lattice site location and annealing behavior of implanted Ca and Sr in GaN

J. Araújo, A. Vantomme, W. Lojkowski, 2006 .

Emission channeling studies of Pr in GaN

J. Araújo, A. Vantomme, G. Langouche, 2000 .

Mesoporous Oxide-Diluted Magnetic Semiconductors Prepared by Co Implantation in Nanocast 3D-Ordered In2O3–y Materials

K. Temst, A. Vantomme, E. Pellicer, 2013 .

Tuning the ferromagnetic-antiferromagnetic interfaces of granular Co-CoO exchange bias systems by annealing

K. Temst, A. Vantomme, E. Menéndez, 2014 .

Electric Field‐Induced Oxidation of Ferromagnetic/Ferroelectric Interfaces

K. Temst, J. Locquet, M. Bisht, 2013 .

Observation of wetting-like phase transitions in a surface-enhanced type-I superconductor

K. Temst, A. Vantomme, P. Sahoo, 2007 .

Spin dynamics in the spacer of an interlayer-coupled Fe/Fe0.57Si0.43/Fe trilayer probed with nuclear resonant scattering of synchrotron radiation

B. Laenens, A. Vantomme, J. Meersschaut, 2008 .

Magnetic characterization of oblique angle deposited Co/CoO on gold nanoparticles

H. Boyen, K. Temst, A. Vantomme, 2019, Journal of Magnetism and Magnetic Materials.

Experimental observation of electron-phonon coupling enhancement in Sn nanowires caused by phonon confinement effects

A. Alatas, K. Temst, L. Piraux, 2019, Physical Review B.

Structure of Ag/Fe superlattices probed at different length scales

K. Temst, E. Kunnen, A. Vantomme, 2000 .

Dependence of damage and strain on the temperature of Si irradiation in epitaxial Ge0.10Si0.90 films on Si(100)

Donald Y. C. Lie, André Vantomme, Kang L. Wang, 1995 .

Epitaxial growth of (100)-oriented SmN directly on (100)Si substrates

K. Temst, A. Vantomme, E. Anton, 2021, Physical Review Materials.

Interlayer coupling across semimetallic iron monosilicide

A. Vantomme, J. Meersschaut, M. Rots, 2005 .

Structural characterization of metastable FeSi films and of {Fe}/{FeSi} multilayers

J. Dekoster, A. Vantomme, G. Langouche, 1998 .

Epitaxial growth of and silicide formation in Fe/FeSi multilayers

A. Vantomme, G. Langouche, S. Degroote, 1997 .

Time-of-flight telescope for heavy-ion RBS

T. Sajavaara, W. Vandervorst, A. Vantomme, 2007 .

Spacious and mechanically flexible mesoporous silica thin film composed of an open network of interlinked nanoslabs

C. Detavernier, K. Temst, K. Vanstreels, 2011 .

Site location of Co in beta-FeSi2

André Vantomme, Stefan Degroote, A. Vantomme, 2005 .

The van der Waals epitaxial growth of GaSe on Si(111)

M. Eddrief, M. Nicolet, J. Mahan, 1997 .

Dependence of the sticking coefficient of sputtered atoms on the target–substrate distance

A. Vantomme, D. Depla, S. Mahieu, 2008 .

Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001).

I. Moerman, A. Vantomme, G. Langouche, 2001 .

The impact of the density and type of reactive sites on the characteristics of the atomic layer deposited WNxCy films

O. Richard, K. Maex, T. Sajavaara, 2006 .

Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond.

M. Nesladek, A. Vantomme, U. Wahl, 2020, Physical review letters.

Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition

C. Detavernier, S. Bals, G. Portale, 2017, Nature Communications.

Influence of magnetocrystalline anisotropy on the magnetization reversal mechanism in exchange bias Co/CoO bilayers

K. Temst, A. Vantomme, E. Menéndez, 2012 .

Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

K. Temst, Yujia Zeng, A. Vantomme, 2016, Journal of physics. Condensed matter : an Institute of Physics journal.

Rotatable anisotropy driven training effects in exchange biased Co/CoO films

K. Temst, A. Vantomme, E. Menéndez, 2014 .

Fluence dependence of ion implantation-induced exchange bias in face centered cubic Co thin films

K. Temst, A. Vantomme, E. Menéndez, 2011 .

Influence of strain on the anti-ferromagnetic ordering in epitaxial Cr(001) films on MgO

K. Temst, S. Mangin, E. Kunnen, 2002 .

Lattice dynamics in Sn nanoislands and cluster-assembled films

K. Temst, A. Vantomme, J. Seo, 2017 .

Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer

K. Temst, M. Bisht, A. Vantomme, 2015 .

Mössbauer studies of complex materials: Energy versus time domain

K. Temst, B. Laenens, A. Vantomme, 2009 .

Improving the magnetic properties of Co-CoO systems by designed oxygen implantation profiles.

K. Temst, A. Vantomme, M. Wójcik, 2013, ACS applied materials & interfaces.

Tailoring the magnetic anisotropy, magnetization reversal, and anisotropic magnetoresistance of Ni films by ion sputtering

K. Temst, A. Volodin, A. Vantomme, 2015 .

Manipulating the asymmetry of magnetization reversal in epitaxial CoO/Co films

K. Temst, Yujia Zeng, A. Vantomme, 2014 .

The influence of interface roughness on the magnetic properties of exchange biased CoO/Fe thin films

K. Temst, A. Vantomme, R. Steitz, 2010 .

A Mössbauer study of Co cluster nucleation in Ag

A. Vantomme, Gu-ling Zhang, H. Pattyn, 1996 .

The influence of a Cu buffer layer on the self-assembly of iron silicide nanostructures on Si(111)

A. Vantomme, K. Paredis, K. Vanormelingen, 2008 .

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

I. Moerman, A. Vantomme, G. Langouche, 1999 .

Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

G. Beyer, A. Satta, K. Maex, 2002 .

Suppression of rare-earth implantation-induced damage in GaN

I. Moerman, M. Swart, A. Vantomme, 2001 .

Magnetotransport in epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5MnO3

A. Vantomme, V. Moshchalkov, J. Vanacken, 1997 .

Heat-induced nanocluster formation in codeposited Ag1−xCox thin films: Nuclear magnetic resonance study

J. Dekoster, A. Vantomme, M. Wójcik, 2004 .

Structural and Magnetic Ordering of Chromium in Ag / Cr Multilayers

S. Demuynck, B. Swinnen, S. Cottenier, 1998 .

Relaxor ferroelectricity and magnetoelectric coupling in ZnO-Co nanocomposite thin films: beyond multiferroic composites.

K. Temst, K. Temst, J. Locquet, 2014, ACS applied materials & interfaces.

Influence of the irradiation temperature on the surface structure and physical/chemical properties of Ar ion-irradiated bulk metallic glasses

K. Temst, A. Vantomme, E. Pellicer, 2014 .

Initial growth mechanism of atomic layer deposited TiN

A. Satta, K. Maex, A. Vantomme, 2004 .

High-precision determination of lattice constants and structural characterization of InN thin films

A. Vantomme, Shengqiang Zhou, Huali Yang, 2006 .

Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium

A. Franquet, M. Caymax, M. Heyns, 2011 .

Iron silicide nanostructure formation on Au induced superstructures on Si(111)

A. Vantomme, D. Smeets, K. Paredis, 2009, Nanotechnology.

Defects induced in GaN by europium implantation

P. Ruterana, A. Vantomme, M. Mamor, 2004 .

Oxidation and Sulfidation of Germanium Surfaces: A Comparative Atomic Level Study of Different Passivation Schemes

C. Merckling, K. Temst, B. Beckhoff, 2012 .

Experimental and theoretical study of Ge surface passivation

G. Pourtois, B. Kaczer, M. Caymax, 2007 .

Investigations of the Surface Chemical Composition and Atomic Structure of ex-situ Sulfur Passivated Ge(100)

K. Temst, B. Beckhoff, S. Sioncke, 2009 .

H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface

G. Pourtois, M. Caymax, M. Heyns, 2007 .

Formation of ultra-thin PtSi layers with a 2-step silicidation process

H. Bender, K. Maex, R. Donaton, 1997, European Workshop Materials for Advanced Metallization,.

Hyperthermal effects on nucleation and growth during low-energy ion deposition

B. Degroote, A. Vantomme, H. Pattyn, 2002 .

Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO

K. Temst, J. Araújo, A. Vantomme, 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN

K. Temst, J. Araújo, A. Vantomme, 2013 .

Dose-dependent precipitate evolution arising during implantation of Er into Si

O. Richard, H. Bender, M. Swart, 2005 .

The influence of the deposition energy on thin film formation: Co on Si(111)

B. Degroote, A. Vantomme, K. Vanormelingen, 2003 .

Electrical characterization of defects in heavy-ion implanted n-type Ge

F. D. Auret, A. Vantomme, D. Smeets, 2007 .

Electrical characterization of defects introduced in n-type Ge during indium implantation

F. D. Auret, A. Vantomme, S. Decoster, 2006 .

Dislocation density and tetragonal distortion of a GaN epilayer on Si (1 1 1): A comparative RBS/C and TEM study

H. Bender, W. Vandervorst, A. Vantomme, 2014 .

Elastic strain in InGaN and AlGaN layers

I. Moerman, A. Vantomme, G. Langouche, 2000 .

Optical and structural properties of Eu-implanted InxAl1−xN

A. Vantomme, E. Alves, R. Martin, 2009 .

Surface Chemistry of CuInS2 Colloidal Nanocrystals, Tight Binding of L-Type Ligands

Qiang Zhao, A. Vantomme, Z. Hens, 2014 .

Identification of the prime optical center in GaN:Eu3+

M. Boćkowski, A. Vantomme, E. Alves, 2010 .

Sequential multiple-step europium ion implantation and annealing of GaN

M. Boćkowski, A. Vantomme, E. Alves, 2014 .

Precise lattice location of substitutional and interstitial Mg in AlN

A. Gottberg, Ulrich Wahl, João D.G. Correia, 2013 .

Evidence of tetragonal distortion as the origin of the ferromagnetic ground state in γ − Fe nanoparticles

Ulrich Wahl, André Vantomme, Haraldur Pall Gunnlaugsson, 2017 .

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

A. Vantomme, S. Ruffenach, U. Wahl, 2013 .

Lift-off protocols for thin films for use in EXAFS experiments.

K. Temst, A. Vantomme, Z. Hussain, 2013, Journal of synchrotron radiation.

Minority anion substitution by Ni in ZnO

K. Temst, A. Vantomme, S. Decoster, 2013 .

Muonic x-ray spectroscopy on implanted targets

A. Vantomme, B. Caerts, R. Pohl, 2023, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

A Case Study of ALD Encapsulation of Quantum Dots: Embedding Supported CdSe/CdS/ZnS Quantum Dots in a ZnO Matrix

C. Detavernier, K. Ludwig, A. Vantomme, 2016 .

Channeling of low energy heavy ions: Er in Si

M. Swart, A. Vantomme, B. Pipeleers, 2002 .

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

André Vantomme, Sara Bals, Christophe Detavernier, 2018 .

Mössbauer spectroscopy investigation of body centered cubic Co in Co/Fe superlattices prepared with MBE

A. Vantomme, G. Langouche, S. Degroote, 1995 .

In situ study of the α -Sn to β -Sn phase transition in low-dimensional systems: Phonon behavior and thermodynamic properties

K. Temst, M. Bisht, A. Vantomme, 2019, Physical Review B.

On the growth kinetics of Ni(Pt) silicide thin films

C. Detavernier, K. Temst, A. Vantomme, 2013 .

Electrical characterization of rare-earth implanted GaN

F. D. Auret, A. Vantomme, P. V. Rensburg, 2009 .

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

R. Loo, M. Caymax, B. Vincent, 2011 .

Mechanisms of arsenic segregation to the Ni2Si/SiO2 interface during Ni2Si formation

J. Kittl, A. Lauwers, K. Maex, 2005 .

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

K. Maex, T. Janssens, K.G. Anil, 2006, IEEE Electron Device Letters.

Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies

T. Schram, A. Veloso, J. Kittl, 2004 .

The magnetic structure of exchange coupled FePt/FePt3 thin films

K. Temst, B. Laenens, A. Vantomme, 2013 .

Formation of epitaxial CoSi2 on Si(100): Role of the annealing ambient

André Vantomme, David B. Fraser, M. Nicolet, 1993 .

In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

C. Detavernier, K. Temst, A. Vantomme, 2012 .

Sn diffusion during Ni germanide growth on Ge1–xSnx

C. Detavernier, K. Temst, A. Vantomme, 2011 .

Ge1−xSnx stressors for strained-Ge CMOS

Roger Loo, Akira Sakai, Yosuke Shimura, 2011 .

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Yosuke Shimura, Matty Caymax, Shigeaki Zaima, 2011 .

Facile and Generalized Preparation of Hierarchically Mesoporous−Macroporous Binary Metal Oxide Materials

B. Su, A. Vantomme, T. Ren, 2004 .

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Wilfried Vandervorst, Marc Heyns, Roger Loo, 2013 .

Lattice sites and damage annealing of Er in low-dose implanted GaAs

A. Vantomme, G. Langouche, U. Wahl, 1999 .

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

F. D. Auret, A. Vantomme, V. Moshchalkov, 2003 .

Lattice location of implanted Ag in Si

A. Vantomme, U. Wahl, J. Correia, 2002 .

DEPTH-SELECTIVE INVESTIGATION OF FE-SILICIDES FORMED AFTER MOLECULAR-BEAM EPITAXY, USING CONVERSION ELECTRON MOSSBAUER SPECTROMETRY

J. Dekoster, A. Vantomme, G. Langouche, 1994 .

Study of concentration variations in the metastable [CsCl]Fe1-xSi phase

S. Cottenier, A. Vantomme, A. Falepin, 2002 .

Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing

O. Richard, S. Cottenier, A. Vantomme, 2003 .

Cubic metastable FeSi1-x epitaxially grown on Si and MgO substrates

J. Dekoster, A. Vantomme, G. Langouche, 1995 .

Study of Phase Formations in ε-FeSi Layers by Pulsed Laser Annealing

A. Vantomme, G. Langouche, C. Comrie, 2001 .

Damage and strain in epitaxial Ge0.10Si0.90 after Si implantation from 40 to 150°C

M. Nicolet, A. Vantomme, F. Eisen, 1993 .

The dependence of the optical energies on InGaN composition

B. Gil, A. Vantomme, R. Martin, 2001 .

Growth of epitaxial CoSi2 on Si(100) using Si(100)/Ti/Co bilayers

M. Nicolet, A. Vantomme, G. Bai, 1993 .

Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer

D. Smeets, A. Vantomme, M. Xu, 2009 .

Tuning quantum corrections and magnetoresistance in ZnO nanowires by ion implantation.

K. Temst, J. Locquet, A. Vantomme, 2012, Nano letters.

Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

A. Vantomme, G. Langouche, Guoyi Zhang, 1999 .

Study of reorientation processes in L10-ordered FePt thin films

B. Laenens, A. Vantomme, D. Smeets, 2010, Intermetallics.

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Hui Yang, Baoshun Zhang, A. Vantomme, 2002 .

COMPREHENSIVE RUTHERFORD BACKSCATTERING AND CHANNELING STUDY OF ION-BEAM-SYNTHESIZED ERSI1.7 LAYERS

H. Bender, A. Vantomme, G. Langouche, 1996 .

A Comparative Study of Te- and Ge-Based OHMIC Contacts on GaAs

M. V. Hove, A. Vantomme, R. Silverans, 1988 .

Acid-Base Mediated Ligand Exchange on Near-Infrared Absorbing, Indium-Based III-V Colloidal Quantum Dots.

C. Detavernier, Qiang Zhao, A. Vantomme, 2021, Journal of the American Chemical Society.

Lattice location of implanted Cu in Si

A. Vantomme, G. Langouche, U. Wahl, 1999 .

Local nuclear orientation of125I in tin and graphite using defect induced electric field gradients

A. Vantomme, G. Langouche, O. Hajjaji, 1990 .

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As

K. Temst, R. Campion, J. Araújo, 2019, Physical Review B.

Diluted manganese on the bond-centered site in germanium

Ulrich Wahl, João D.G. Correia, S. Decoster, 2010 .

Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized 57Mn+ Ion Beam at Isolde

M. Fanciulli, A. Vantomme, G. Weyer, 1997 .

Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution

K. Temst, A. Vantomme, S. Decoster, 2014 .

Carrier density variation in films of Nd0.5Sr0.5MnO3

A. Vantomme, I. Gordon, V. Moshchalkov, 1998 .

Probing interacting two-level systems with rare-earth ions

D. Bouwmeester, J. Bowers, M. Heck, 2018, Physical Review B.

Investigation of iridium as a gate electrode for deep sub-micron CMOS technology

T. Schram, K. Maex, A. Vantomme, 2003 .

Probing the dynamical properties of the metastable bcc Fe x Co 1-x phase

Paweł T. Jochym, B. Laenens, A. Vantomme, 2009 .

A simplified collisional model of sputtering in the linear cascade regime

J. Mahan, A. Vantomme, 1997 .

Fe-silicide nanostructures on Si(111)-root 3X root 3-Ag

André Vantomme, Kristof Paredis, A. Vantomme, 2005 .

Ensemble RBS: probing the compositional profile of 3D microscale structures

W. Vandervorst, A. Vantomme, J. Meersschaut, 2022, Surfaces and Interfaces.

Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry

W. Vandervorst, A. Delabie, A. Vantomme, 2023, Nuclear Instruments and Methods in Physics Reseach B.

Influence of finite size effects on exchange anisotropy in oxidized Co nanocluster assembled films

K. Temst, J. Verbeeck, G. Tendeloo, 2006 .

Controlled Phase Formation by Using a Diffusion Barrier - The Fe-Si REACTION

J. Dekoster, A. Vantomme, G. Langouche, 1999 .

Structural study of YSi1.7 layers formed by channeled ion beam synthesis

A. Vantomme, G. Langouche, H. Pattyn, 1998 .

Ion beam synthesis of heteroepitaxial erbium silicide layers

H. Bender, A. Vantomme, G. Langouche, 1996 .

Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy

J. Locquet, A. Vantomme, W. Jevasuwan, 2015 .

Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations.

K. Temst, A. Vantomme, M. Kappers, 2017, Physical review letters.

Site location of Co in β-FeSi2

A. Vantomme, S. Degroote, I. Dézsi, 2005 .

Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices

K. Temst, H. P. Gunnlaugsson, A. Vantomme, 2017 .

PROPOSAL to the ISOLDE and Neutron Time-of-Flight Committee Interaction and Dynamics of add-atoms with 2-Dimensional Structures ( PAC studies of mono-and low-number of stacking layers ) IDA 2 DS-Collaboration 24 September 2013

J. G. Correia, K. Temst, Y. Kadi, 2013 .

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

C. Detavernier, J. Jordan-Sweet, C. Lavoie, 2010 .

Paramagnetism and antiferromagnetic interactions in Cr-doped GaN

K. Temst, A. Vantomme, T. Som, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

Magnetic Anisotropy of Epitaxially Grown Fe/Mn/Co Trilayers

K. Temst, A. Vantomme, S. Couet, 2013, IEEE Transactions on Magnetics.

Diffusion-induced step decoration of Co on Ag(001)

B. Degroote, A. Vantomme, G. Langouche, 2000 .

Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions

H. Bender, A. Vantomme, G. Langouche, 2000 .

Different strain relaxation mechanisms in strained Si/Si1−xGex/Si heterostructures by high dose B+ and BF2+ doping

Shi-Li Zhang, A. Vantomme, Changchun Chen, 2002 .

Mössbauer spectroscopy study of epitaxial and buried CoSi layers

A. Vantomme, G. Langouche, I. Dézsi, 1989 .

Lattice location study of ion implanted Sn and Sn-related defects in Ge

Ulrich Wahl, João D.G. Correia, S. Decoster, 2010 .

Quantitative characterization of the surface morphology using a height difference correlation function

B. Degroote, A. Vantomme, K. Vanormelingen, 2006 .

The magnetic structure of epitaxial Cr films on MgO

K. Temst, S. Mangin, E. Kunnen, 2000 .

Anisotropic magnetism and spin-dependent transport in Co nanoparticle embedded ZnO thin films

K. Temst, Yujia Zeng, Yang Zhang, 2013 .

Interplay between magnetocrystalline anisotropy and exchange bias in epitaxial CoO/Co films

K. Temst, Yujia Zeng, A. Vantomme, 2016, Journal of physics. Condensed matter : an Institute of Physics journal.