S. Kaneki

发表

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Tamotsu Hashizume, T. Hashizume, Zenji Yatabe, 2016 .

Interface characterization of Al2O3/m-plane GaN structure

T. Hashizume, S. Kaneki, 2021 .

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

Atsushi Yamamoto, Tamotsu Hashizume, Sung Wng Kim, 2017, Advanced science.

Effects of postmetallization annealing on interface properties of Al2O3/GaN structures

T. Hashizume, Y. Ando, S. Kaneki, 2018, Applied Physics Express.

Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3

N. Hara, T. Hashizume, N. Okamoto, 2017 .

Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

T. Hashizume, Y. Ando, S. Kaneki, 2019, Applied Physics Express.

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Jan Kuzmik, Tamotsu Hashizume, Zenji Yatabe, 2017 .

Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process

N. Hara, T. Hashizume, N. Okamoto, 2020, Semiconductor Science and Technology.

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

S. Kaneki, H. Fujikura, Taichiro Konno, 2024, Applied Physics Letters.

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

T. Konno, S. Kaneki, S. Ichikawa, 2024, Applied Physics Letters.