D. Ko

发表

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Hyoungsub Kim, Y. Kang, H. Kang, 2014, ACS applied materials & interfaces.

Ionic conductivity properties of amorphous Li–La–Zr–O solid electrolyte for thin film batteries

Y. Yoon, D. Ko, Seok-Hee Lee, 2012 .

Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

H. Sohn, M. Cho, D. Ko, 2010 .

Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy

Hyun-Joon Shin, M. Cho, D. Ko, 2004 .

A Study on Oxidation Behavior of Poly-Si1 xGex Films

Y. H. Lee, D. Ko, Cheol‐Woong Yang, 2003 .

Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor

Daehyun Kim, D. Ko, W. Park, 2016 .

Characteristics of Y2O3 films on Si(111) grown by oxygen-ion beam-assisted deposition

Jungmok Seo, In-Whan Lyo, Kwangho Jeong, 2001 .

Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation

D. Ko, Seran Park, H. Jang, 2017 .

Characteristics of ZrO2 Films with Al and Pt Gate Electrodes

J. Ku, S. Nam, D. Ko, 2003 .

Study of ZrO2 thin films for gate oxide applications

J. Ku, S. Nam, Hoo-Jeong Lee, 2001 .

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.

Dong-Ho Kang, Changhwan Shin, Seunghwan Seo, 2019, Nanoscale.

Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

H. Ryu, Myung-Hyun Lee, D. Ko, 2020 .

Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing

N. Lee, K. Chung, H. Chang, 2004 .

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing [rapid communication]

N. Lee, R. Sinclair, H. Chang, 2004 .

Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3

N. Lee, R. Sinclair, H. Chang, 2004 .

Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers

Hoo-Jeong Lee, D. Ko, Sun-Wook Kim, 2019, Journal of Alloys and Compounds.

Strain behavior of epitaxial Si1 − xCx films on silicon substrates during dry oxidation

Hyungdong Lee, D. Ko, J. Yoo, 2013 .

The Effect of Gate Length on Channel Strain of Recessed Source/Drain Si1-xCx

Hoo-Jeong Lee, D. Ko, S. Chopra, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Interfacial characteristics of N-incorporated HfAlO high-k thin films

Yonghwi Kim, Y. K. Kim, Kwangho Jeong, 2004 .

Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

N. Lee, K. Chung, M. Cho, 2006 .

Characteristics of HfO2–Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature

K. Chung, M. Cho, D. Ko, 2005 .

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications

J. H. Park, D. Ko, J. H. Kim, 2019, Journal of Materials Science: Materials in Electronics.

Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film

S. Baik, D. Ko, D. Suh, 2022, Thin Solid Films.

A Study on the Thermal Stabilities of the NiGe and Ni1 − x Ta x Ge Systems

Hyoungsub Kim, B. Lee, D. Ko, 2007 .

Humidity dependence of the tribological behavior of diamond-like carbon films against steel ball

Se Jun Park, Kwang-Ryeol Lee, D. Ko, 2003 .

Biaxial elastic modulus of very thin diamond-like carbon (DLC) films

Kwang-Ryeol Lee, D. Ko, K. Eun, 2001 .

Effects of SiO2 overlayer at initial growth stage of epitaxial Y2O3 film growth

M. Cho, D. Ko, K. Jeong, 2000 .

Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

H. Sohn, K. Chung, M. Cho, 2008 .

Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation

Dong Chan Kim, U. Chung, J. Moon, 2006 .

Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy

D. Ko, I. Lee, Juhee Lee, 2020, Journal of the Korean Physical Society.

Growth of epitaxial γ-Al2O3(111) films using an oxidized Si(111) substrate

K. Chung, D. Ko, Yunah Choi, 2002 .

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

D. Ahn, S. Nam, D. Ko, 2015 .

Control of the interfacial reaction in HfO2 on Si-passivated GaAs

S. W. Cho, Sang Han Park, Hyoungsub Kim, 2013 .

Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate

S. W. Cho, K. Chung, Y. Kang, 2011 .

The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces

K. Chung, M. Cho, D. Ko, 2009 .

Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique

Daehyun Kim, Hyoungsub Kim, Tae-Woo Kim, 2020 .

In-situ dynamic high-resolution transmission electron microscopy: application to Pt/GaAs interfacial reactions

R. Sinclair, D. Ko, 1994 .

Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method

D. Ko, H. Park, D. Shin, 2019, AIP Advances.

Effect of ZrO2 incorporation into high dielectric Gd2O3 film grown on Si(111)

M. Cho, D. Ko, Yonghwi Kim, 2005 .

Physical and electrical characteristics of GexSb100−x films for use as phase-change materials

Jin-Hwan Park, D. Ko, Jwa-Kyung Kim, 2018, Thin Solid Films.

Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

H. Sohn, B. Min, M. Cho, 2008 .

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

K. Chung, Hyunsoo Lee, M. Cho, 2008 .

Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity

Jung Ho Yoo, Dae Hong Ko, Hyunchul Sohn, 2011 .

Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant

So young Kim, D. Ko, So Young Kim, 2022, Materials.

Structural and stoichiometric change in nitrided HfO2 grown on Ge(100) by atomic layer deposition

K. Chung, M. Cho, D. Ko, 2006 .

Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering

J. Ku, Hyoungsub Kim, D. Ko, 2005 .

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

D. Ko, Sun Wook Kim, H. Jang, 2014 .

Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor

Y. Kang, M. Cho, D. Ko, 2012 .

Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

K. Chung, Hyunsoo Lee, M. Cho, 2009 .

Microstructure and mechanical properties of WC–C nanocomposite films

Se Jun Park, Kwang-Ryeol Lee, D. Ko, 2002 .

Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment

Hyoungsub Kim, Y. Kang, Dae-Kyoung Kim, 2013 .

Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si1-xGex

D. Ko, Hyun Woo Lee, D. Byeon, 2020 .

Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2021 .

Achievement of a high channel strain via dry oxidation of recessed source/drain Si1−xGex structures

D. Ko, Sun Wook Kim, Sangmo Koo, 2011 .

Relaxation of misfit strain in silicon-germanium (Si1−xGex) films during dry oxidation

H. Sohn, M. Cho, D. Ko, 2010 .

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

H. Sohn, B. Min, K. Chung, 2010 .

The Microstructure and Chemical State of W-Si-N Layers Formed in W / WN x / Poly Si Systems during Postannealing

K. Lim, B. Min, D. Ko, 2004 .

Interfacial reactions between WNx and poly Si1−xGex films

B. Min, M. Cho, D. Ko, 2003 .

Effect of deposition conditions of poly Si1−xGex films and Ge atoms on the electrical properties of poly Si1−xGex (x=0,0.6)/HfO2 gate stack

S. Nam, B. Min, M. Cho, 2003 .

Properties of Polycrystalline Si 1 - x Ge x Films Grown by Ultrahigh Vacuum CVD Using Si 2 H 6 and GeH 4

Jonghyeon Kim, D. Ko, T. Lee, 2003 .

Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy

D. Ko, W. Park, C. Shin, 2016, Microscopy and Microanalysis.

Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature

M. Cho, D. Ko, K. Jeong, 1999 .

Effect of Boron Dose and Post-thermal Budget on Electrical Properties of MOS-Capacitors with a W / WN x / poly Si1 − x Ge x Gate Stack

B. Min, D. Ko, J. J. Kim, 2004 .

Physical and Electrical Properties of W / WN x / Poly Si1 − x Ge x ( x = 0 , 0.2 , 0.6 ) Gates Stack with Post-thermal Process

K. Lim, B. Min, D. Ko, 2004 .

The electrical characteristics of the MOSCAP structures with W/WNx/poly Si1-xGeX gates stack

Y. H. Lee, D. Ko, I. Yeo, 2001 .

The physical and electrical properties of polycrystalline Si1-xGex as a gate electrode material for ULSI CMOS structures

Hoo-Jeong Lee, D. Ko, I. Yeo, 2000 .

Annealing effects of aluminum silicate films grown on Si(100)

J. Ku, H. C. Kang, M. Cho, 2002 .

Understanding the epitaxial growth of SexTey@Te core-shell nanorods and the generation of periodic defects.

Y. Min, Unyong Jeong, D. Ko, 2010, ACS nano.

Comparison of Strain Characteristics and Contact Resistances of Heavily Phosphorus‐Doped Si Formed by Phosphorus Implantation and In Situ Phosphorus‐Doped Si Epitaxial Growth

Eunjung Ko, D. Ko, Seran Park, 2020, physica status solidi (a).

Defect Generation Mechanism of Epitaxially Grown In Situ Phosphorus‐Doped Silicon on Silicon (111) Substrate

Eunjung Ko, D. Ko, Juhee Lee, 2020, physica status solidi (a).

Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing

Eunjung Ko, Minhyun Lee, D. Ko, 2020, physica status solidi (a).

Stability of Sputtered Hf-Silicate Films in Poly Si/Hf-Silicate Gate Stack Under the Chemical Vapor Deposition of Poly Si and by Annealing

R. Sinclair, D. Ko, S. Kang, 2004 .

Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

D. Ko, S. Kim, H. Oh, 2020, Molecules.

Phase reactions at semiconductor metallization interfaces

R. Sinclair, D. Ko, A. Bhansali, 1990 .

Interfacial Reaction in Poly Si1 − x Ge x / ZrO2 with Ge Content in Poly Si1 − x Ge x Films

B. Min, M. Cho, D. Ko, 2002 .

Synthesis of self-ordered Sb2Te2 films with atomically aligned Te layers and the effect of phonon scattering modulation

Tae Hyeon Kim, M. Cho, D. Ko, 2013 .

Wet oxidation behaviors of polycrystalline Si1−xGex films

Y. H. Lee, D. Ko, I. Yeo, 2001 .

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

D. Ko, Dae-Hong Ko, Nam-geol Lee, 1998 .

The effects of Ta on the formation of Ni-silicide in Ni0.95xTax0.05/Si systems

J. Ku, Si-young Choi, D. Ko, 2004 .

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

Si-young Choi, D. Ko, Eun-Ha Kim, 1999 .

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Eunjung Ko, D. Ko, Seran Park, 2019, physica status solidi (a).

Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Soohaeng Cho, H. Kim, M. Cho, 1999 .

Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layer

K. Chung, D. Ko, M. Jang, 2005 .

YSi2−x formation in the presence of interfacial SiO2 layer

M. Cho, D. Ko, K. Jeong, 2002 .

Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model

D. Ko, Seran Park, H. Park, 2021, Journal of the Korean Physical Society.

Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer

Eunjung Ko, D. Ko, Seran Park, 2020, Applied Physics Express.

Structural characteristics of Y2O3 films grown on oxidized Si(111) surface

M. Cho, D. Ko, K. Jeong, 2001 .

Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition

M. Cho, D. Ko, K. Jeong, 1999 .

Epitaxial Y2O3 film growth on an oxidized Si surface

M. Cho, D. Ko, K. Jeong, 2002 .

Thermal stability of Ni–Pt–Ta alloy silicides on epi-Si1−xCx

H. Sohn, M. Cho, D. Ko, 2008 .

High Thermal Stability of Ni Monosilicide from Ni-Ta Alloy Films on Si(100)

J. Ku, Si-young Choi, D. Ko, 2003 .

Effect of N-type doping and vacancy formation on the thermodynamic, electrical, structural, and bonding properties of Si: X. (X = P, As, and Sb): a theoretical study

D. Ko, Minhyeong Lee, Ki-Seok Lee, 2020, Semiconductor Science and Technology.

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

D. Ko, Minhyeong Lee, Kiseok Lee, 2020, Semiconductor Science and Technology.

Selective chemical wet etching of Si1-xGex versus Si in single-layer and multi-layer with HNO3/HF mixtures

D. Ko, H. Jang, Yongjoon Choi, 2020, Thin Solid Films.

Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film

G. Jeong, D. Ahn, S. Nam, 2014 .

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

D. Ahn, D. Ko, Wu Zhe, 2016 .

Effect of Surface Iron on Gate Oxide Integrity and its Removal from Silicon Surfaces

C. R. Helms, D. Ko, B. Triplett, 1993 .

Reactions at Semiconductor Metal Interfaces

R. Sinclair, D. Ko, T. Konno, 1994 .

Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

D. Ko, J. H. Kim, Joon-Min Park, 2018 .

Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100)

Kwangho Jeong, Chung-Nam Whang, Hyejin Choi, 2002 .

Formation of a Ge-rich layer during the oxidation of strained Si1−xGex

B. Min, M. Cho, D. Ko, 2006 .

Quasicrystalline phase-change memory

M. Cho, D. Ko, Hyeong-Chai Jeong, 2020, Scientific Reports.

Characteristics of phase transition and separation in a In–Ge–Sb–Te system

M. Cho, D. Ko, M. Jang, 2012 .

Nondestructive depth profile measurement of a Co/Ti bilayer using refracted x-ray fluorescence

T. Roberts, K. Gray, R. Chang, 1995 .

Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

S. W. Kim, H. Ryu, D. Ko, 2015 .

Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement

Dae-Kyoung Kim, Min-Seo Baik, M. Cho, 2020 .

Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition

Je-Hun Lee, Kwangho Jeong, Chung-Nam Whang, 2002 .

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (1 0 0) by X-ray photoelectron spectroscopy

Sungtae Kim, D. Ko, Minhyeong Lee, 2018, Applied Surface Science.

Tribological behavior of nano-undulated surface of diamond-like carbon films

Se Jun Park, Kwang-Ryeol Lee, D. Ko, 2005 .

Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Sang In Lee, U. Chung, D. Ko, 1997 .

NF3/NH3 Dry Cleaning Mechanism Inspired by Chemical and Physical Surface Modification of Si, SiO2, and Si3N4

Sung Yong Kang, D. Ko, H. Oh, 2014 .

Super-conformal TiN thin film deposition by carrier pulse purge atomic layer deposition system: chamber design optimization with computational fluid dynamics

D. Ko, D. Suh, H. Park, 2023, Thin Solid Films.

The Dielectric Characteristics and Thermal Stability of Hf-Silicate Films with Different Si Contents

Hyoungsub Kim, M. Cho, D. Ko, 2007 .

Growth Kinetics of Atomic Layer Deposited Hf Silicate-Like Films using Hf [ N ( CH3 ) ( C2H5 ) ] 4 and SiH [ N ( CH3 ) 2 ] 3 Precursors via an H2O Oxidant

K. Chung, D. Ko, U. Hwang, 2007 .

Hf-Aluminate Films With and Without an Interfacial Layer during Growth and Postannealing Structural and Electrical Characteristics

K. Chung, H. Chang, M. Cho, 2005 .

Amorphous phase formation and initial interfacial reactions in the platinum/GaAs system

R. Sinclair, D. Ko, 1992 .

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Minhyun Lee, D. Ko, Seran Park, 2020, Japanese Journal of Applied Physics.

Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films

Eunjung Ko, D. Ko, Minhyeong Lee, 2017 .

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Hyoungsub Kim, Eunjung Ko, D. Ko, 2016 .

High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers

Chang Zoo Kim, Daehyun Kim, K. Seo, 2020 .

Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

K. Chung, M. Cho, D. Ko, 2010 .

Suppression of phase separation in Hf-silicate films using NH3 annealing treatment

K. Chung, C. Yim, M. Cho, 2006 .

Thermal stability of epitaxial Pt films on Y2O3 in a metal-oxide–Si structure

Y. K. Kim, R. Sinclair, M. Cho, 2003 .

Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents

Hyoungsub Kim, D. Ko, Dong Won Lee, 2007 .

Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal

K. Chung, M. Cho, D. Ko, 2006 .

Chemical structure of ultrathin SiO2 film with nitrogen incorporated by remote nitrogen plasma

N. Lee, M. Cho, D. Ko, 2002 .

Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films

Eunjung Ko, D. Ko, Minhyeong Lee, 2019, ACS Applied Electronic Materials.

Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy.

M. Cho, D. Ko, K. Jeong, 2009, Journal of the American Chemical Society.

Investigation of oxide layer removal mechanism using reactive gases

D. Ko, Jin-Goo Park, H. Oh, 2015 .

Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates.

Y. K. Kim, M. Cho, D. Ko, 2009, The Journal of chemical physics.

Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition

H. Sohn, D. Ko, Kyumin Lee, 2015 .

A Study on the Formation Processes and Microstructures of Ni Germanosilicide Films on Si1 − x Ge x ( x = 0.1 and 0.2 )

Hyoungsub Kim, D. Ko, Jisun Kim, 2006 .

Characterization of residual strain in epitaxial Ge layers grown in sub-100nm width SiO2 trench arrays

B. Min, D. Ko, H. Jang, 2015 .

RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

H. Sohn, R. Sinclair, D. Ko, 2014 .

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

H. Sohn, D. Ko, Youngjae Kim, 2013 .

Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

H. Sohn, D. Ko, Youngjae Kim, 2013 .

Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN

K. Jeong, M. Cho, D. Ko, 2015, Scientific Reports.

Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

H. Sohn, M. Cho, D. Ko, 2009 .

Determination of elastic modulus and Poisson's ratio of diamond-like carbon films

Kwang-Ryeol Lee, D. Ko, Sung-Jin Cho, 1999 .

Measurement of elastic modulus and Poisson's ratio of diamond-like carbon films

Kwang-Ryeol Lee, D. Ko, Sung-Jin Cho, 1998 .

A Method for Independent Measurement of Elastic Modulus and Poisson's Ratio of Diamond-Like Carbon Films

Kwang-Ryeol Lee, D. Ko, Sung-Jin Cho, 1997 .

Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD

S. Baik, D. Ko, D. Byeon, 2021, Coatings.

Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C

D. Ko, S. Baik, D. Byeon, 2021, Journal of the Korean Physical Society.

Epitaxy of Si1−xCx via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

D. Ko, H. Jang, Sangmo Koo, 2017 .

Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition

P. McIntyre, J. Ku, N. Lee, 2004 .

Analysis of anisotropic in-plane strain behavior in condensed Si1−xGex fin epitaxial layer using X-ray reciprocal space mapping

D. Ko, H. Jang, Byongju Kim, 2019, Japanese Journal of Applied Physics.

Formation of a Ge-rich Si1−xGex (x > 0.9) fin epitaxial layer condensed by dry oxidation

D. Ko, H. Jang, Byongju Kim, 2017 .

A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

J. Ku, S. Nam, Hoo-Jeong Lee, 2001 .

Tribochemical reaction of hydrogenated diamond-like carbon films: a clue to understand the environmental dependence

Dae Hong Ko, Se Jun Park, Kwang-Ryeol Lee, 2004 .

Effects of N2+ ion implantation on phase transition in Ge2Sb2Te5 films

M. Cho, D. Ko, J. Baeck, 2006 .

Elastic modulus and structural evolution of diamond-like carbon films deposited by RF-PACVD

Kwang-Ryeol Lee, D. Ko, K. Eun, 2002 .

Amorphous phase formation in an as‐deposited platinum‐GaAs interface

R. Sinclair, D. Ko, 1991 .

Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

D. Ko, H. Jang, Byongju Kim, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Study on Temperature-Dependent Growth Characteristics of Germanium Oxide Film by Plasma-Enhanced Atomic Layer Deposition

D. Ko, So Young Kim, H. Park, 2023, Thin Solid Films.

Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

D. Ko, H. Park, Minhyeong Lee, 2018, Thin Solid Films.

Control of the Workfunction in Bilayer Metal Gate Stacks by Varying the First Layer Thickness

M. Cho, D. Ko, I. Lee, 2011 .

Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs

K. Chung, M. Cho, D. Ko, 2011 .

Effect of Ge Concentration on the On-Current Boosting of Logic P-Type MOSFET with Sigma-Shaped Source/Drain

Eunjung Ko, D. Ko, Seran Park, 2021, Coatings.

High mobility CMOS transistors on Si/SiGe heterostructure channels

Injo Ok, Raj Jammy, P. Y. Hung, 2012 .

Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

M. Cho, D. Ko, C. Whang, 1999 .

In Situ Removal of Native Oxides from Silicon Surfaces Using Anhydrous Hydrogen Fluoride Gas

C. R. Helms, K. Saraswat, D. Ko, 1999 .

SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain

R. Jammy, P. D. Kirsch, I. Ok, 2010, 2010 Symposium on VLSI Technology.

Physical and electrical degradation of ZrO2 thin films with aluminum electrodes

J. Ku, S. Nam, D. Ko, 2003 .

Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures

Y. K. Kim, M. Cho, D. Ko, 2006 .

Interfacial reaction induced strain relaxation in Hf‐silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature

Y. Kang, Dae-Kyoung Kim, M. Cho, 2013 .

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry.

H. Sohn, K. Chung, C. Yim, 2008, The Journal of chemical physics.

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

Jungwoo Oh, M. Cho, D. Ko, 2010 .

Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films

M. Cho, D. Ko, M. Jang, 2012 .

Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

C. Yim, Y. Kang, M. Cho, 2011 .

Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

In-Whan Lyo, Sang-jun Choi, H. Shin, 2004 .

Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays

B. Min, D. Ko, Sun Wook Kim, 2014 .

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

P. D. Kirsch, K. Matthews, D.-H Kim, 2013, 2013 IEEE International Electron Devices Meeting.