C. Marchiori

发表

CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs

C. Rossel, M. Hopstaken, D. Caimi, 2012 .

Self-aligned S/D regions for InGaAs MOSFETs

D. Caimi, L. Czornomaz, J. Fompeyrine, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs

T. Topuria, P. Rice, D. Sadana, 2010 .

A Hybrid Barium Titanate–Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning

Lukas Czornomaz, Bert J. Offrein, Chiara Marchiori, 2016, Journal of Lightwave Technology.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

Lukas Czornomaz, Chiara Marchiori, Jean Fompeyrine, 2014 .

A strong electro-optically active lead-free ferroelectric integrated on silicon

Alexei Chelnokov, Chiara Marchiori, Jean Fompeyrine, 2013, Nature Communications.

Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics

Patrik Hoffmann, Morgan Trassin, Chiara Marchiori, 2017, Nanotechnology.

Oxygenated amorphous carbon for resistive memory applications

Evangelos Eleftheriou, Laurent Dellmann, Abu Sebastian, 2015, Nature Communications.

Optical properties of epitaxial SrHfO3 thin films grown on Si

K. Babich, D. Webb, R. Germann, 2007 .

Solid phase epitaxy of SrTiO3 on (Ba,Sr)O∕Si(100): The relationship between oxygen stoichiometry and interface stability

C. Rossel, J. Locquet, D. Caimi, 2006 .

Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO 3 Gate Dielectrics on Si(100)

C. Rossel, J. Locquet, D. Caimi, 2006 .

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

J. Locquet, J. Fompeyrine, C. Marchiori, 2003 .

Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

C. Rossel, D. Caimi, J. Fompeyrine, 2012 .

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

P. Niedermann, A. Dommann, H. Känel, 2013 .

Epitaxial germanium-on-insulator grown on (001) Si

A. Dimoulas, C. Rossel, J. Locquet, 2007 .

Structural properties of epitaxial SrHfO3 thin films on Si (001)

Jane P. Chang, M. Toney, J. Fompeyrine, 2013 .

SrHfO3 as gate dielectric for future CMOS technology

K. Babich, D. Webb, R. Germann, 2007 .

Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs

T. Topuria, P. Rice, D. Sadana, 2010, ECS Transactions.

Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces

M. Silly, F. Sirotti, S. Abel, 2014 .

Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling

Martin M. Frank, Chiara Marchiori, Jean Fompeyrine, 2011 .

Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling

V. Narayanan, J. Bruley, M. Frank, 2011 .

Barium-titanate integrated with silicon photonics for ultra-efficient electro-optical performance

B. Offrein, S. Abel, D. Caimi, 2015, 2015 European Conference on Optical Communication (ECOC).

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

High mobility III–V channel MOSFETs for post-Si CMOS applications

S. Koester, D. Webb, J. Bucchignano, 2009, 2009 IEEE International Conference on IC Design and Technology.

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

J. Locquet, C. Marchiori, J. Seo, 2010 .

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

J. Locquet, C. Marchiori, J. Seo, 2018 .

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications

D. Webb, R. Germann, C. Rossel, 2009 .

Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films

Jean-Pierre Locquet, Chiara Marchiori, Marilyne Sousa, 2015 .

Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics

Alexander A. Demkov, Chiara Marchiori, Kristy J. Kormondy, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

Lukas Czornomaz, Florian Fallegger, Alexander A. Demkov, 2015 .

Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si

M D Rossell, C. Rossel, S. Abel, 2013, Nanotechnology.

Electro-optical properties of barium titanate films epitaxially grown on silicon

Alexei Chelnokov, Chiara Marchiori, Jean Fompeyrine, 2012, OPTO.

Thermal stability of the SrTiO3∕(Ba,Sr)O stacks epitaxially grown on Si

J. Locquet, J. Fompeyrine, M. Sousa, 2006 .

Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices

A. Dimoulas, D. Webb, C. Rossel, 2009 .

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

Jean-Pierre Locquet, Chiara Marchiori, Wolfgang Jäger, 2011 .

Gate Dielectrics for High Mobility Semiconductors

A. Dimoulas, D. Webb, C. Rossel, 2008 .

High-K dielectrics for the gate stack

J. Locquet, J. Fompeyrine, C. Marchiori, 2006 .

Field-effect transistors with SrHfO3 as gate oxide

David J. Webb, Jean-Pierre Locquet, Chiara Marchiori, 2006 .

High quality epitaxial Dy3Ge5 films grown on Ge(001) substrates

J. Locquet, C. Marchiori, J. Seo, 2011 .

Unraveling the Cooperative Mechanism of Visible-Light Absorption in Bulk N,Nb Codoped TiO2 Powders of Nanomaterials

G. D. Liberto, D. Meroni, M. Ceotto, 2014 .

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

A. Dimoulas, J. Fompeyrine, C. Marchiori, 2008 .

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

A. Dimoulas, J. Fompeyrine, C. Marchiori, 2008 .

GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

T. Topuria, P. Rice, D. Webb, 2011 .

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

D. Webb, C. Rossel, E. Kiewra, 2010 .

Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity

T. Conard, C. Rossel, J. Locquet, 2005 .

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

V. Djara, D. Caimi, J. Fompeyrine, 2015 .

Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

D. Webb, R. Germann, G. Shahidi, 2008 .

Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

V. Djara, D. Caimi, J. Fompeyrine, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

UNDERSTANDING AND MANAGEMENT OF SULFUR CORROSION FROM INSULATING OIL

C. Marchiori, F. Scatiggio, P. Botelho, 2008 .

Oxygenated amorphous carbon for resistive memory applications

E. Eleftheriou, A. Sebastian, C. Rossel, 2015, Nature Communications.

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction

David J. Webb, Jean-Pierre Locquet, A. Dimoulas, 2007 .