P. Vennégués

发表

Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping

M. Portail, Rami Mantach, P. Vennégués, 2020, Applied Physics Express.

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

S. Fernández, F. Calle, E. Feltin, 2001 .

Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

J. Brault, J. Massies, B. Damilano, 2015 .

Crack‐Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, P. Vennégués, M. Leroux, 2001 .

Green emission from semipolar InGaN quantum wells grown on low‐defect ( 112¯2 ) GaN templates fabricated on patterned r‐sapphire

P. Vennégués, J. Zúñiga-Pérez, P. de Mierry, 2016 .

Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

P. Vennégués, J. Zúñiga-Pérez, G. Feuillet, 2015 .

Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

P. Vennégués, P. de Mierry, P. Mierry, 2015 .

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

J. Brault, J. Massies, B. Damilano, 2013 .

AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

J. Brault, J. Massies, B. Damilano, 2013 .

Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers

P. Vennégués, M. Laügt, M. Vaille, 1999 .

Defect blocking via laterally induced growth of semipolar (1 0 1̅ 1) GaN on patterned substrates

V. Delaye, P. Vennégués, J. Zúñiga-Pérez, 2016 .

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE from 3D islands and lateral overgrowth

P. Vennégués, B. Beaumont, P. Gibart, 1999 .

AlGaN/GaN Nanostrnctures for UV Light Emitting Diodes

J. Brault, J. Massies, S. Chenot, 2014, 2014 Asia Communications and Photonics Conference (ACP).

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

J. Brault, S. Matta, J. Massies, 2017 .

GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

M. Portail, Y. Cordier, B. Damilano, 2016 .

Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

B. Damilano, P. Vennégués, P. de Mierry, 2014 .

Non Polar GaN and (Ga,In)N/GaN Heterostructures Grown on A-Plane (11–20) ZnO Subtrates

J. Brault, J. Chauveau, B. Damilano, 2014, 2014 Asia Communications and Photonics Conference (ACP).

GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

J. Brault, J. Massies, B. Damilano, 2011 .

Symmetry of wurtzite nanostructures with the c -axis in the layer plane

P. Vennégués, P. Tronc, 2008 .

Polarity Control in Group-III Nitrides beyond Pragmatism

R. Felice, P. Vennégués, Z. Sitar, 2016 .

Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

J. Brault, J. Chauveau, P. Vennégués, 2014 .

Blue Light-Emitting Diodes Grown on ZnO Substrates

J. Brault, J. Chauveau, S. Chenot, 2013 .

Investigation of AlyGa1−yN/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters

J. Brault, S. Matta, M. Khalfioui, 2016 .

Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

M. Jublot, P. Vennégués, J. Zúñiga-Pérez, 2014 .

Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films

J. Massies, N. Grandjean, P. Vennégués, 1999 .

Microstructural studies of GaN grown on (0001) sapphire by MOVPE

P. Vennégués, B. Beaumont, P. Gibart, 1997 .

Submicron periodic poling and chemical patterning of GaN

J. Massies, N. Grandjean, S. Pezzagna, 2005 .

Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

P. Vennégués, É. Tournié, M. Laügt, 1997 .

Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

P. Ruterana, A. Sánchez, P. Vennégués, 2002 .

Ta2Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC

P. Godignon, N. Mestres, J. Millán, 2004 .

Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

J. Brault, S. Matta, J. Massies, 2020 .

Epitaxial Lateral Overgrowth of GaN on Silicon (111)

E. Feltin, P. Vennégués, J. Christen, 2001 .

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

P. Vennégués, S. Haffouz, M. Vaille, 1999 .

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

P. Vennégués, M. Vaille, B. Beaumont, 1999 .

Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation.

F. Omnès, P. Vennégués, S. Haffouz, 1999 .

Spectroscopic properties of LaF 3 : Tm 3 + nanoparticle-doped silica optical fibers

P. Vennégués, C. Kucera, W. Blanc, 2017 .

Spectroscopic properties of LaF3:Tm3+ nanoparticle-doped silica optical fibers

P. Vennégués, J. Ballato, C. Kucera, 2014 .

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

J. Massies, Y. Cordier, S. Chenot, 2009 .

AlGaN/GaN HEMTs with an InGaN back‐barrier grown by ammonia‐assisted molecular beam epitaxy

Y. Cordier, S. Chenot, B. Damilano, 2013 .

Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers

P. Vennégués, M. Albrecht, O. Tottereau, 2017 .

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

P. Vennégués, P. de Mierry, M. Leroux, 2010, Nanoscale research letters.

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

S. Joblot, Y. Cordier, F. Omnès, 2005 .

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties

J. Massies, B. Damilano, P. Vennégués, 2004 .

Atomic structure of pyramidal defects in Mg-doped GaN

J. Massies, B. Damilano, P. Vennégués, 2003 .

Influence of high Mg doping on the microstructural and optoelectronic properties of GaN

E. Feltin, N. Grandjean, B. Damilano, 2002 .

Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN

E. Feltin, N. Grandjean, B. Damilano, 2002 .

Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

P. Vennégués, M. Benaissa, B. Beaumont, 2000 .

Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

P. Vennégués, M. Leroux, S. Haffouz, 1998 .

Ductile relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films on GaN

P. Vennégués, J. Bethoux, 2005 .

2D versus 3D growth mode in ZnO layers grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire

S. Vézian, P. Vennégués, C. Deparis, 2002 .

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

S. Vézian, P. Vennégués, C. Deparis, 2001 .

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

B. Corbett, J. Chauveau, Y. Cordier, 2012 .

Plasmon energy from strained GaN quantum wells

J. Brault, W. Sigle, P. Vennégués, 2013 .

Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE

P. Vennégués, K. Zhuravlev, V. Mansurov, 2006 .

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

J. Massies, S. Joblot, Y. Cordier, 2006 .

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

P. Vennégués, S. Haffouz, B. Beaumont, 1999 .

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennégués, Z. Bougrioua, F. Mathal, 2006 .

Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

E. Fitzgerald, S. Ringel, P. Vennégués, 2016 .

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

P. Vennégués, P. Mierry, M. Nemoz, 2010 .

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

P. Vennégués, M. Leroux, É. Frayssinet, 2007 .

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

P. Vennégués, H. Schenk, A. D. Dräger, 2008 .

Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

N. Grandjean, P. Vennégués, P. Mierry, 2016 .

High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy

S. Fernández, F. Calle, K. Ploog, 2001 .

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

V. Brändli, P. Vennégués, J. Zúñiga-Pérez, 2015 .

Anisotropic chemical etching of semipolar ZnO crystallographic planes: polarity versus dangling bonds

P. Vennégués, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, 2009, Nanotechnology.

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

P. Vennégués, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, 2007 .

Microstructure of epitaxial Mg3N2 thin films grown by MBE

P. Vennégués, J. Zúñiga-Pérez, H. Rotella, 2021 .

Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

J. Brault, S. Matta, A. Michon, 2017 .

Epitaxial Lateral Overgrowth of GaN

P. Vennégués, B. Beaumont, P. Gibart, 2001 .

Recent TEM developments applied to quantum structures

P. Vennégués, P. Aken, M. Benaissa, 2013 .

Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

J. Brault, P. Vennégués, M. Benaissa, 2012 .

Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy

J. Brault, P. Vennégués, M. Benaissa, 2009 .

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

E. Feltin, P. Vennégués, M. Leroux, 2000 .

Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

P. Jouneau, C. Bougerol, P. Vennégués, 2019, Nanotechnology.

Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates

P. Vennégués, J. Zúñiga-Pérez, G. Feuillet, 2017 .

Control of the polarity of GaN films using an Mg adsorption layer

N. Grandjean, S. Pezzagna, P. Vennégués, 2003 .

Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

P. Vennégués, H. Mariette, B. Daudin, 2010 .

Strain relaxation in (Al,Ga)N/GaN heterostructures

P. Vennégués, O. Tottereau, P. Mierry, 2005 .

Plastic relaxation through buried cracks in AlGaN/GaN heterostructures

P. Vennégués, M. Laügt, P. Mierry, 2004 .

Phase separation in GaN/AlGaN quantum dots

J. Brault, P. Vennégués, P. Aken, 2009 .

Semipolar (10-11) GaN growth on silicon-on-insulator substrates: Defect reduction and meltback etching suppression

M. Portail, Rami Mantach, P. Vennégués, 2019, Journal of Applied Physics.

Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

P. Vennégués, P. de Mierry, M. Hugues, 2015 .

High indium content AlInGaN films: growth, structure and optoelectronic properties

P. Vennégués, P. Mierry, L. Hirsch, 2007 .

Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)

J. Massies, P. Vennégués, É. Dumont, 2003 .

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

N. Grandjean, P. Vennégués, J. Zúñiga-Pérez, 2009 .

Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

P. Vennégués, C. Chauvet, É. Tournié, 1998 .

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

J. Brault, S. Matta, J. Massies, 2018, Journal of Crystal Growth.

Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes

M. Portail, P. Vennégués, J. Michaud, 2017 .

UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305–335 nm range

J. Brault, M. Khalfioui, J. Massies, 2018, Semiconductor Science and Technology.

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

T. Chassagne, M. Portail, Y. Cordier, 2014 .

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1 x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennégués, R. Martin, É. Frayssinet, 2012 .

Physical characterization of molybdenum oxycarbide catalyst ; TEM, XRD and XPS

C. Pham‐Huu, M. Ledoux, P. Vennégués, 1995 .

Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates.

S. Denbaars, S. Nakamura, Haojun Zhang, 2019, ACS applied materials & interfaces.

Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

D. Buell, J. Chauveau, P. Vennégués, 2007 .

Band-edge photoluminescence and reflectivity of nonpolar (112̄0) and semipolar (112̄2) GaN formed by epitaxial lateral overgrowth on sapphire

P. Vennégués, M. Leroux, B. Vinter, 2008 .

behavior semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates

K. Thonke, Tao Wang, J. Bai, 2020 .

Polarity inversion of GaN(0001) by a high Mg doping

J. Massies, N. Grandjean, S. Pezzagna, 2004 .

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

J. Brault, J. Massies, B. Damilano, 2011 .

Molecular-beam epitaxy of ZnxBe1−xSe layers on vicinal Si(0 0 1) substrates

P. Vennégués, C. Chauvet, É. Tournié, 1999 .

Catalytic unzipping of carbon nanotubes to few-layer graphene sheets under microwaves irradiation

T. Jacob, C. Pham‐Huu, M. Ledoux, 2009 .

Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

J. Chauveau, P. Vennégués, J. Zúñiga-Pérez, 2008 .

Interfacial properties of thermally oxidized Ta2Si on Si

P. Godignon, P. Mawby, J. Millán, 2008 .

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

B. Damilano, P. Vennégués, F. Semond, 2013 .

γ′ precipitates with a twin orientation relationship to their hosting grain in a γ-γ′ nickel-based superalloy

P. Vennégués, N. Bozzolo, J. Franchet, 2018, Scripta Materialia.

Evidence of multimicrometric coherent γ′ precipitates in a hot‐forged γ–γ′ nickel‐based superalloy

P. Vennégués, N. Bozzolo, T. Billot, 2016, Journal of microscopy.

Luminescence behavior of semipolar ( 10 1 ¯ 1 ) InGaN/GaN “bow-tie” structures on patterned Si substrates

K. Thonke, Tao Wang, J. Bai, 2020 .

Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

J. Brault, A. Michon, A. Ougazzaden, 2022, Materials.

Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

M. Teisseire, Sébastien Chenot, S. Chenot, 2014 .

Study of open-core dislocations in GaN films on (0001) sapphire

P. Vennégués, M. Vaille, B. Beaumont, 1997 .

Growth of Co/Ru strained superlattices

P. Vennégués, P. Panissod, J. Jay, 1992 .

Molecular beam epitaxy of GaSbAlxGa1 − xSb quantum well structures

J. Massies, P. Vennégués, M. Leroux, 1996 .

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

S. Vézian, P. Vennégués, M. Laügt, 2001 .

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

L. Largeau, K. Tavernier, B. Damilano, 2022, Journal of Applied Physics.

High‐Quality Distributed Bragg Reflectors for Resonant‐Cavity Light‐Emitting Diode Applications

S. Fernández, F. Calle, F. Naranjo, 2002 .

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

P. Lorenzini, Pierre Gibart, Mathieu Leroux, 2000 .

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

M. Portail, P. Vennégués, J. Michaud, 2016 .

Epitaxial relationships between GaN and Al2O3(0001) substrates

J. Massies, N. Grandjean, P. Vennégués, 1997 .

Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

J. Massies, N. Grandjean, P. Vennégués, 1998 .

In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

J. Massies, N. Grandjean, S. Vézian, 2000 .

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

P. Vennégués, É. Tournié, V. Bousquet, 1999 .

Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

J. Brault, J. Massies, S. Chenot, 2014 .

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

Mathieu Leroux, Benjamin Damilano, Jean Massies, 2014, Photonics West - Optoelectronic Materials and Devices.

Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations

P. Vennégués, Philippe Vennéguès, 2012 .

Use of thulium-doped LaF 3 nanoparticles to lower the phonon energy of the thulium's environment in silica-based optical fibres

John Ballato, Wilfried Blanc, Courtney Kucera, 2017 .

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, J. Massies, 2019, Journal of Applied Physics.

Structural and electronic properties of ZnMgO/ZnO quantum wells

J. Chauveau, P. Vennégués, Xiaodong Tang, 2005 .

Interface structure and anisotropic strain relaxation of nonpolar wurtzite (1120) and (1010) orientations: ZnO epilayers grown on sapphire

J. Chauveau, P. Vennégués, J. Zúñiga-Pérez, 2008 .

Transmission electron microscopy study of the nitridation of the (0001) sapphire surface

P. Vennégués, B. Beaumont, 1999 .

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

Nicolas Grandjean, Denis Martin, N. Grandjean, 2010 .

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

D. Buell, J. Chauveau, P. Vennégués, 2007 .

On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

M. Portail, P. Vennégués, J. Michaud, 2016 .

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

T. Chassagne, M. Portail, P. Vennégués, 2016 .

Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

M. Portail, P. Vennégués, J. Michaud, 2015 .

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

A. Leycuras, T. Chassagne, J. Pezoldt, 2005 .

Intentional polarity conversion of AlN epitaxial layers by oxygen

P. Vennégués, J. Zúñiga-Pérez, M. Albrecht, 2018, Scientific Reports.

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Pierre Gibart, Bernard Beaumont, Eric Feltin, 2001 .

Proposition of a model elucidating the AlN-on-Si (111) microstructure

L. Largeau, P. Vennégués, G. Feuillet, 2018, Journal of Applied Physics.

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

J. Massies, Y. Cordier, S. Chenot, 2009 .

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

E. Feltin, P. Vennégués, H. Schenk, 2003 .

Epitaxial lateral overgrowth of GaN on Si (111)

Pierre Gibart, Bernard Beaumont, Eric Feltin, 2003 .

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

P. Vennégués, O. Tottereau, M. Azize, 2005 .

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

P. Vennégués, M. Vaille, B. Beaumont, 2000 .

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P. Vennégués, S. Haffouz, M. Vaille, 1998 .

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Fabrice Semond, E. Feltin, Franck Natali, 2003 .

Investigation of Al

J. Brault, S. Matta, M. Khalfioui, 2016 .

Al5+αSi5+δN12, a new Nitride compound

J. Brault, A. Michon, L. Largeau, 2019, Scientific Reports.

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Nicolas Grandjean, Denis Martin, Jean-Michel Chauveau, 2012 .

Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

S. Haffouz, P. Lorenzini, Pierre Gibart, 1997 .

Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Mathieu Leroux, T. Gühne, Zahia Bougrioua, 2007 .

The ternary system holmium-boron-carbon; isothermal section at 1500 °C

P. Vennégués, J. Bauer, J. L. Vergneau, 1985 .

Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition

J. Brault, P. Vennégués, M. Leroux, 2014, Nanotechnology.

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M-Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Zahia Bougrioua, P. Vennégués, Z. Bougrioua, 2007 .

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

N. Mestres, M. Vellvehí, J. Millán, 2006 .

Characterization of High-k Ta2Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator

P. Godignon, N. Mestres, J. Millán, 2005 .

Engineering Epitaxy and Condensation: Fabrication of Ge Nanolayers, Mechanism and Applications

F. Deprat, O. Gourhant, I. Berbezier, 2023, SSRN Electronic Journal.

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

P. Larsen, P. Vennégués, S. Haffouz, 2003 .

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

P. Vennégués, J. Christen, H. Schenk, 2003 .

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

T. Chassagne, M. Portail, P. Vennégués, 2015 .

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Fiber‐draw‐induced elongation and break‐up of particles inside the core of a silica‐based optical fiber

W. Blanc, J. Ballato, M. Cabié, 2016 .

GaN epitaxial growth on sapphire (0 0 0 1): The role of the substrate nitridation

J. Massies, N. Grandjean, P. Vennégués, 1997 .

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Pierre Gibart, Bernard Beaumont, P. Vennégués, 2000 .

Phase separation in metalorganic vapor-phase epitaxy AlxGa(1−x)N films deposited on 6H–SiC

P. Vennégués, H. Lahrèche, 2000 .

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

M. Charles, P. Vennégués, J. Zúñiga-Pérez, 2023, Journal of Applied Physics.

Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells

C. Bougerol, P. Vennégués, H. Mariette, 2007 .

Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties

P. Vennégués, C. Chauvet, É. Tournié, 2000 .

Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

J. Massies, S. Joblot, Y. Cordier, 2005 .

GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

J. Massies, N. Grandjean, P. Vennégués, 1999 .

Symmetry and optical properties of wurtzite nanostructures with the c axis in the layer plane

P. Vennégués, P. Tronc, 2008 .

Structural and morphological characterization of GaN/AlGaN quantum dots by transmission electron microscopy

J. Brault, P. Vennégués, M. Benaissa, 2008 .

Lattice relaxation and three‐dimensional reflection high‐energy electron‐diffraction analysis of strained epitaxial Co/Mn superlattices

P. Vennégués, V. Pierron-Bohnes, K. Ounadjela, 1994 .

Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

T. Chassagne, M. Portail, J. Chauveau, 2009 .

Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

J. Speck, P. Vennégués, P. de Mierry, 2021, Physical Review Applied.

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

P. Vennégués, M. Vaille, B. Beaumont, 1997 .

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Zahia Bougrioua, P. Vennégués, P. Vennéguès, 2006 .

Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy

J. Chauveau, P. Vennégués, B. Vinter, 2008 .

AlInN optical confinement layers for edge emitting group III‐nitride laser structures

B. Corbett, P. Vennégués, P. Demolon, 2009 .

Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

J. Chauveau, B. Damilano, P. Vennégués, 2016 .

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

B. Damilano, B. Gil, P. Vennégués, 2015 .

Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

P. Vennégués, J. Zúñiga-Pérez, P. de Mierry, 2019, Applied Physics Letters.

GaN-Based Heterostructures Grown on ZnO Substrates: From Polarity Control to the Fabrication of Blue LEDs

J. Brault, M. Khalfioui, J. Chauveau, 2014, 2014 Asia Communications and Photonics Conference (ACP).

On the morphologies of oxides particles in optical fibers: Effect of the drawing tension and composition

W. Blanc, J. Ballato, M. Cabié, 2019, Optical Materials.

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

S. Fernández, F. Calle, E. Feltin, 2002 .

Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth

J. Massies, N. Grandjean, P. Vennégués, 1996 .