Yue Wang

发表

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2018 .

Performance of AlGaInP LEDs on silicon substrates through low threading dislocation density (TDD) germanium buffer layer

C. S. Tan, E. Fitzgerald, J. Michel, 2018, Semiconductor Science and Technology.

Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Wei Li, Chuan Seng Tan, Jurgen Michel, 2017 .

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2018, IEEE Journal of the Electron Devices Society.

Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer

C. S. Tan, T. Buonassisi, Zekun Ren, 2017 .

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation.

C. S. Tan, Yiding Lin, Bongkwon Son, 2020, Optics express.

MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

C. S. Tan, E. Fitzgerald, K. Lee, 2018, Semiconductor Science and Technology.

Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

E. Fitzgerald, S. Pennycook, S. Gradečak, 2020, Semiconductor Science and Technology.

Ultra-Thin GaAs Double-Junction Solar Cell With Carbon-Doped Emitter

C. S. Tan, Zhe Liu, T. Buonassisi, 2018, IEEE Journal of Photovoltaics.

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2021, Journal of Semiconductors.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Kenneth Eng Kian Lee, Soon Fatt Yoon, Chuan Seng Tan, 2017, OPTO.

In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations

C. S. Tan, E. Fitzgerald, K. Lee, 2018, AIP Advances.

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application

C. S. Tan, E. Fitzgerald, K. Lee, 2022, Materials Science in Semiconductor Processing.

Integration of Si-CMOS and III-V materials through multi-wafer stacking

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

C. S. Tan, E. Fitzgerald, K. Lee, 2018 .