Shuyu Bao

发表

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2018 .

Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Wei Li, Chuan Seng Tan, Jurgen Michel, 2017 .

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2018, IEEE Journal of the Electron Devices Society.

Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets

Zhiyuan Zeng, Hua Zhang, Xiaoying Qi, 2013, Nature Communications.

Growth of noble metal nanoparticles on single-layer TiS2 and TaS2 nanosheets for hydrogen evolution reaction

Zhiyuan Zeng, Hua Zhang, Chaoliang Tan, 2014 .

Low-threshold optically pumped lasing in highly strained Ge nanowires

K. Saraswat, C. S. Tan, E. Fitzgerald, 2017 .

Germanium-on-insulator for group IV laser and III-V integration on silicon

Shuyu Bao, 2018 .

Ge-on-insulator lateral p-i-n waveguide photodetectors for optical communication.

C. S. Tan, K. Lee, Shuyu Bao, 2020, Optics letters.

GeSn-on-insulator substrate formed by direct wafer bonding

Chuan Seng Tan, Wei Wang, Bing Wang, 2016 .

Strain relaxation of germanium-tin (GeSn) fins

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018 .

Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal

Y. Yeo, C. S. Tan, Shengqiang Xu, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Control wafer bow of InGaP on 200 mm Si by strain engineering

B. Wang, E. Fitzgerald, J. Michel, 2017 .

The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs

Y. Yeo, C. S. Tan, Shengqiang Xu, 2017, 2017 Symposium on VLSI Technology.

Germanium-on-insulator virtual substrate for InGaP epitaxy

B. Wang, C. S. Tan, E. Fitzgerald, 2017 .

Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers

E. Fitzgerald, S. Pennycook, S. Gradečak, 2020, Semiconductor Science and Technology.

Modeling and fabrication of Ge-on-Si3N4 for low bend-loss waveguides

R. Soref, C. S. Tan, Xin Guo, 2016, 2016 IEEE 13th International Conference on Group IV Photonics (GFP).

High quality Ge-OI, III–V-OI on 200 mm Si substrate

C. S. Tan, E. Fitzgerald, J. Michel, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Low-Threshold Lasing in Strained Germanium under Optical Pumping

K. Saraswat, C. S. Tan, E. Fitzgerald, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).

Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity

Hao Zhou, Qimiao Chen, K. Lee, 2021, Applied Physics Letters.

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Soon Fatt Yoon, Chuan Seng Tan, Bing Wang, 2016 .

MoS2 nanoflower-decorated reduced graphene oxide paper for high-performance hydrogen evolution reaction.

Z. Yin, Hua Zhang, Shuyu Bao, 2014, Nanoscale.

Low-threshold optically pumped lasing in highly strained germanium nanowires

K. Saraswat, C. S. Tan, E. Fitzgerald, 2017, Nature Communications.

Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

Richard A. Soref, Ting Hu, Chuan Seng Tan, 2016 .

The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200 mm GaAs virtual substrate

Soon Fatt Yoon, Chuan Seng Tan, Eugene A. Fitzgerald, 2015 .

The role of AsH[subscript 3] partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD ? Application to a 200mm GaAs virtual substrate

C. S. Tan, E. Fitzgerald, K. Lee, 2015 .

Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking

Chuan Seng Tan, David Kohen, Shuyu Bao, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2021, Journal of Semiconductors.

High-efficiency normal-incidence vertical p - i - n photodetectors on a germanium-on-insulator platform

Chuan Seng Tan, Jurgen Michel, Hong Wang, 2017 .

Epitaxy and wafer bonding of AlGalnP multiple-quantum wells and light-emitting diodes on 8″ Si substrates

C. S. Tan, E. Fitzgerald, J. Michel, 2016, 2016 IEEE Photonics Conference (IPC).

Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

Chuan Seng Tan, Eugene A. Fitzgerald, Li Zhang, 2016 .

Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates

Kenneth Eng Kian Lee, Soon Fatt Yoon, Chuan Seng Tan, 2016, SPIE OPTO.

Integration of III–V materials and Si-CMOS through double layer transfer process

Chuan Seng Tan, Shuyu Bao, C. S. Tan, 2014, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

Integration of Si-CMOS and III-V materials through multi-wafer stacking

W. A. Sasangka, C. S. Tan, E. Fitzgerald, 2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference.

Integration of 200 mm Si-CMOS and III-V materials through wafer bonding

C. S. Tan, E. Fitzgerald, K. Lee, 2017, 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

C. S. Tan, E. Fitzgerald, K. Lee, 2018 .

Thermal stability of germanium-tin (GeSn) fins

Y. Yeo, C. S. Tan, K. Lee, 2017 .