H. von Kanel

Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon

P. Niedermann, R. Kaufmann, A. Neels, 2012, CAS 2012 (International Semiconductor Conference).

Carrier thermalization in Ge quantum wells

D. Chrastina, G. Isella, H. von Kanel, 2009, 2009 6th IEEE International Conference on Group IV Photonics.

Giant AC Stark shift in germanium

D. Chrastina, G. Isella, H. von Kanel, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates

G. Isella, H. von Kanel, J. Stangl, 2005, Proceedings of the IEEE Symposium on Emerging Technologies, 2005..

SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD

R. Kelsall, A. Neels, D. Paul, 2008, 2008 5th IEEE International Conference on Group IV Photonics.