W. de Boer

High-quality p+ n Ge diodes selectively grown on Si with a sub-300nm transition region

L. Nanver, A. Sammak, L. Qi, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

L. Nanver, W. de Boer, J. Derakhshandeh, 2011, Materials.