J. Teherani

发表

Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor

S. Koester, M. Luisier, P. Solomon, 2011, IEEE Electron Device Letters.

An Intuitive Equivalent Circuit Model for Multilayer Van Der Waals Heterostructures

J. Teherani, Abhinandan Borah, Punnu Jose Sebastian, 2018, IEEE Transactions on Electron Devices.

Electrical characterization of 2D materials-based field-effect transistors

Sekhar Babu Mitta, J. Hone, J. Teherani, 2020, 2D Materials.

Record Hole Mobility at High Vertical Fields in Planar Strained Germanium on Insulator With Asymmetric Strain

D. Antoniadis, P. Hashemi, J. Hoyt, 2014, IEEE Electron Device Letters.

Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness

J. Hoyt, Y. Zhu, G. Shahidi, 2012, IEEE Electron Device Letters.

${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}/{\rm GaAs}_{0.5}{\rm Sb}_{0.5}$ Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics

D. Antoniadis, J. Hoyt, T. Yu, 2013, IEEE Electron Device Letters.

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Dimitri A. Antoniadis, Judy L. Hoyt, Winston Chern, 2012 .

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices.

P. Schuck, J. Hone, A. Zangiabadi, 2020, ACS applied materials & interfaces.

Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant

J. Hone, J. Teherani, Abhinandan Borah, 2021, ACS Applied Electronic Materials.

The device level modulation of carrier transport in a 2D WSe2 field effect transistor via a plasma treatment.

J. Hone, J. Teherani, G. Yeom, 2019, Nanoscale.

A Comprehensive Theoretical Analysis of Hole Ballistic Velocity in Si, SiGe, and Ge: Effect of Uniaxial Strain, Crystallographic Orientation, Body Thickness, and Gate Architecture

J. Teherani, 2017, IEEE Transactions on Electron Devices.

Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance

P. Solomon, D. Antoniadis, E. Yablonovitch, 2016 .

Role of out-of-plane dielectric thickness in the electrostatic simulation of atomically thin lateral junctions

J. Teherani, Ankur Nipane, Yefei Zhang, 2018, Journal of Applied Physics.

High-Operating-Temperature MWIR Detector Diodes

D. F. Weirauch, J. Teherani, M. Kinch, 2008 .

The 2D Debye length: An analytical study of weak charge screening in 2D semiconductors

J. Teherani, A. Ueda, Ankur Nipane, 2021 .

Resonant tunnelling diodes based on twisted black phosphorus homostructures

T. Low, Subhasis Ghosh, Changgu Lee, 2021, Nature Electronics.

Transferred via contacts as a platform for ideal two-dimensional transistors

Kenji Watanabe, T. Taniguchi, J. Hone, 2019, Nature Electronics.

A Physically-Intuitive Method for Calculation of the Local Lattice Constant from a High-Resolution Transmission Electron Microscopy Image by Fourier Analysis

J. Hoyt, J. Teherani, 2013, 1309.3155.

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

Zachary A. Lamport, T. Taniguchi, I. Kymissis, 2021, Nature Electronics.

Author Correction: High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

Zachary A. Lamport, M. Lipson, Kenji Watanabe, 2021, Nature Electronics.

Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide

Zachary A. Lamport, M. Lipson, Kenji Watanabe, 2021 .

Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor

Eli Yablonovitch, Dimitri A. Antoniadis, Judy L. Hoyt, 2014, IEEE Transactions on Electron Devices.

Absence of a Band Gap at the Interface of a Metal and Highly Doped Monolayer MoS2.

Jiwoong Park, A. Pasupathy, J. Teherani, 2017, Nano letters.

Electrostatics of lateral p-n junctions in atomically thin materials

J. Teherani, Abhinandan Borah, Ankur Nipane, 2017 .

Electrostatic design of vertical tunneling field-effect transistors

D. Antoniadis, J. Hoyt, J. Teherani, 2013, 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

Demystifying the role of channel region in two-dimensional transistors

J. Teherani, A. Ueda, Ankur Nipane, 2021, Applied Physics Express.

A framework for generation and recombination in tunneling field-effect transistors

D. Antoniadis, J. Hoyt, S. Agarwal, 2015, 2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

Fundamental limits of the switching abruptness of tunneling transistors

James Towfik Teherani, J. Teherani, 2015 .

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

Jeffrey D. Beck, Mike Goodwin, Richard Scritchfield, 2009, Defense + Commercial Sensing.

Erratum: “Electrostatics of lateral p-n junctions in atomically thin materials” [J. Appl. Phys. 122, 194501 (2017)]

J. Teherani, Abhinandan Borah, Ankur Nipane, 2018, Journal of Applied Physics.

Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors

D. A. Antoniadis, E. Yablonovitch, J. L. Hoyt, 2013, IEEE Electron Device Letters.

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices.

J. Hone, A. Zangiabadi, J. Teherani, 2020, ACS applied materials & interfaces.

Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

Judy L. Hoyt, James T. Teherani, Pouya Hashemi, 2010, 2010 International Electron Devices Meeting.