H. Tsuchiya

发表

Atomistic Simulations of Si, Ge and III¿¿¿V Nanowire MOSFETs

Y. Kamakura, H. Tsuchiya, 2016 .

On the performance limits of emerging nano-MOS transistors: A simulation study

H. Tsuchiya, K. Fujii, T. Mori, 2007, 2007 7th IEEE Conference on Nanotechnology (IEEE NANO).

A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs

H. Tsuchiya, K. Fujii, T. Mori, 2006, IEEE Transactions on Electron Devices.

Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects

M. Ogawa, H. Tsuchiya, H. Ando, 2010, IEEE Transactions on Electron Devices.

A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential

K. Hess, H. Tsuchiya, B. Fischer, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Electron mobility calculation for graphene on substrates

Y. Kamakura, M. Ogawa, H. Tsuchiya, 2014 .

Carrier Transport in High-mobility MOSFETs

Y. Kamakura, H. Tsuchiya, 2016 .

Quantum Transport Modeling of Ultrasmall Semiconductor Devices (Special Issue on TCAD for Semiconductor Industries)

H. Tsuchiya, T. Miyoshi, 1999 .

Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation

M. Anantram, A. Svizhenko, M. Ogawa, 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.

Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors

Y. Kamakura, M. Ogawa, H. Tsuchiya, 2015, IEEE Transactions on Electron Devices.

Coupled Monte Carlo simulation of transient electron-phonon transport in small FETs

Y. Kamakura, H. Tsuchiya, I. N. Adisusilo, 2014, 2014 IEEE International Electron Devices Meeting.

Comparative Study on Drive Current of III–V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation

H. Tsuchiya, T. Mori, Y. Azuma, 2008, IEEE Transactions on Nanotechnology.

Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs

H. Tsuchiya, S. Takagi, 2008, IEEE Transactions on Electron Devices.

Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs

H. Tsuchiya, T. Miyoshi, Motoki Horino, 2003 .

Enhancement of Carrier Ballistic Transport in Schottky S/D MOSFETs

Wei Wang, M. Ogawa, H. Tsuchiya, 2009 .

Carrier TransporT in nanosCale Mos TransisTors Carrier TransporT in nanosCale Mos TransisTors

Y. Kamakura, H. Tsuchiya, 2017 .

Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

K. Nishi, H. Saito, H. Tsuchiya, 2001 .

Bipolar quantum-transport modeling of carrier injection into a SCH-quantum-well laser

H. Tsuchiya, T. Miyoshi, 1996 .

Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels

M. Ogawa, H. Tsuchiya, H. Hosokawa, 2012 .

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

M. Ogawa, H. Tsuchiya, S. Koba, 2011 .

Quantum transport simulation of III–V MOSFETs based on Wigner Monte Carlo approach

M. Ogawa, H. Tsuchiya, S. Koba, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

M. Ogawa, H. Tsuchiya, S. Koba, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

2-d materials and devices

Y. Kamakura, H. Tsuchiya, 2016 .

Simulation of Electron Transport in Atomic Monolayer Semiconductor FETs

H. Tsuchiya, Hideki Hirai, S. Kaneko, 2015 .

Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

H. Tsuchiya, N. Mori, Casey Clendennen, 2015 .

Computational study on band structure engineering using graphene nanomeshes

M. Ogawa, H. Tsuchiya, N. Hasegawa, 2013 .

Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs

M. Ogawa, M. Ogawa, H. Tsuchiya, 2011, IEEE Transactions on Electron Devices.

Computational Study of Edge Configuration and Quantum Confinement Effects on Graphene Nanoribbon Transport

H. Tsuchiya, Ryutaro Sako, H Hosokawa, 2011, IEEE Electron Device Letters.

Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport

H. Tsuchiya, H. Ando, H. Hosokawa, 2010 .

Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport

Y. Kamakura, M. Ogawa, H. Tsuchiya, 2014 .

Electronic band structures of graphene nanomeshes

M. Ogawa, H. Tsuchiya, N. Hasegawa, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Band structure and electron transport in multi-junction graphene nanoribbons

M. Ogawa, H. Tsuchiya, N. Hasegawa, 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

Quantum hole transport at the heterointerface of long wavelength avalanche photodiodes

M. Ogawa, H. Tsuchiya, T. Miyoshi, 1992 .

Simulation of quantum transport in quantum devices with spatially varying effective mass

Hideaki Tsuchiya, Tanroku Miyoshi, Matsuto Ogawa, 1991 .

Channel length scaling limits of III–V channel MOSFETs governed by source–drain direct tunneling

Y. Kamakura, M. Ogawa, H. Tsuchiya, 2013 .

Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic Transport

M. Ogawa, H. Tsuchiya, Y. Yamada, 2013, IEEE Transactions on Electron Devices.

Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport

M. Ogawa, H. Tsuchiya, S. Koba, 2012, IEEE Transactions on Electron Devices.

Quasi‐ballistic Transport in Si Nanoscale MOSFETs

Y. Kamakura, H. Tsuchiya, 2016 .

First¿¿¿principles Calculations for Si Nanostructures

Y. Kamakura, H. Tsuchiya, 2016 .

Understanding of Carrier Transport in the Ultimately Scaled MOSFETs and Recent Advancements of the Simulation Techniques

H. Tsuchiya, 2015 .

Atomistic modeling of electron-phonon interaction and electron mobility in Si nanowires

M. Ogawa, H. Tsuchiya, Yoshihiro Yamada, 2012 .

Quantum Transport Simulation of Silicon-Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation

M. Ogawa, H. Tsuchiya, Y. Yamada, 2009, IEEE Transactions on Electron Devices.

Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire

M. Ogawa, M. Ogawa, H. Tsuchiya, 2009, IEEE Transactions on Electron Devices.

Three-dimensional quantum transport simulation of Si-nanowire transistors based on Wigner function model

H. Tsuchiya, Y. Yamada, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Nonequilibrium Green’s function approach to high-temperature quantum transport in nanostructure devices

H. Tsuchiya, T. Miyoshi, 1998 .

Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application

Hideaki Tsuchiya, Tanroku Miyoshi, Matsuto Ogawa, 1991 .

Intersubband absorption changes in GaAs/AlGaAs MQW induced by external light

H. Katahama, H. Tsuchiya, Yukio Shakuda, 1990 .

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

R. Dutton, H. Tsuchiya, Yang Liu, 2014 .

Quantum transport modeling in nano-scale devices

M. Ogawa, H. Tsuchiya, T. Miyoshi, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.