H. Jaouen

发表

Electron-phonon scattering in Si and Ge: From bulk to nanodevices

C. Tavernier, D. Rideau, Y. Niquet, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

C. Tavernier, X. Blase, D. Rideau, 2009, 0902.0491.

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

L. Selmi, P. Palestri, C. Tavernier, 2012, IEEE Transactions on Electron Devices.

Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys

C. Tavernier, D. Rideau, H. Jaouen, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

C. Tavernier, D. Rideau, H. Jaouen, 2009 .

Low-Field Mobility in Strained Silicon with `Full Band' Monte Carlo Simulation using k.p and EPM Bandstructure

A. Ghetti, C. Tavernier, D. Rideau, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Strained Si/SiGe MOSFET capacitance modeling based on band structure analysis

T. Skotnicki, F. Boeuf, E. Batail, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Limits and improvements of TCAD piezoresistive models in FDSOI transistors

C. Tavernier, D. Rideau, R. Clerc, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation

P. Dollfus, S. Barraud, M. Jaud, 2007 .

Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs

P. Dollfus, S. Barraud, M. Jaud, 2007 .

Monte Carlo simulation of ultimate DGMOS based on a Pearson Effective Potential formalism

P. Dollfus, S. Barraud, M. Jaud, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study

P. Dollfus, F. D. Crecy, S. Barraud, 2006 .

Strained Si, Ge, andSi1−xGexalloys modeled with a first-principles-optimized full-zonek∙pmethod

A. Ghetti, C. Tavernier, D. Rideau, 2006 .

New self heating structures for thermal coupling modeling on multi-fingered SOI power devices

M. Minondo, A. Giry, H. Jaouen, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

Thermal effects modeling of multi-fingered MOSFETs based on new specific test structures

M. Minondo, A. Giry, H. Jaouen, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

A. Zaka, Y. Leblebici, D. Rideau, 2012, IEEE Transactions on Electron Devices.

Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model

D. Rideau, O. Saxod, C. Tavernier, 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).

TCAD Simulation for Advanced Terahertz SiGeC HBTs

C. Tavernier, N. Zerounian, H. Jaouen, 2022 .

Finite element analysis of stress evolution in Si based front and back ends micro structures

V. Senez, H. Jaouen, G. Carlotti, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

CMOS stress sensor for 3D integrated circuits: Thermo-mechanical effects of Through Silicon Via (TSV) on surrounding silicon

P. Bouchard, V. Fiori, S. Gallois-Garreignot, 2014, 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Numerical modeling of stress build up during nickel silicidation under anisothermal annealing

G. Cailletaud, H. Jaouen, O. Thomas, 2006 .

Electrical characterization and compact modeling of MOSFET body effect

C. Tavernier, D. Rideau, M. Minondo, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

P. Dollfus, S. Barraud, M. Jaud, 2008, IEEE Transactions on Electron Devices.

Programming efficiency and drain disturb trade-off in embedded Non Volatile Memories

P. Palestri, C. Tavernier, D. Rideau, 2010, 2010 14th International Workshop on Computational Electronics.

Electromigration induced failure mechanism: Multiphysics model and correlation with experiments

V. Fiori, F. Cacho, C. Tavernier, 2008, EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems.

Modeling dopant diffusion in SiGe and SiGeC layers

D. Dutartre, C. Fellous, A. Poncet, 2004 .

Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon

A. Claverie, F. Cristiano, H. Jaouen, 2008 .

Electrical and Physical Investigation of Defect Annihilation in Arsenic Implanted Silicon

G. Ghibaudo, H. Jaouen, I. Stoemenos, 1990, January 16.

Electronic transport investigation of arsenic‐implanted silicon. I. Annealing influence on the transport coefficients

G. Ghibaudo, C. Christofides, H. Jaouen, 1989 .

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model

D. Garetto, D. Rideau, A. Schmid, 2012 .

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model

D. Garetto, D. Rideau, A. Schmid, 2012, Journal of Computational Electronics.

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

C. Tavernier, D. Rideau, Y. Niquet, 2009 .

Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation

Patrice Gergaud, Herve Jaouen, M. Gailhanou, 2005 .

Exploring Ni-Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements

H. Jaouen, O. Thomas, P. Gergaud, 2004 .

In situ study of stress evolution during the reaction of a nickel film with a silicon substrate

H. Jaouen, O. Thomas, P. Gergaud, 2004 .

Surface potential compact model for embedded flash devices oriented to IC memory design

Y. Leblebici, D. Rideau, A. Schmid, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

A constitutive single crystal model for the silicon mechanical behavior: applications to the stress induced by silicided lines and STI in MOS technologies

S. Orain, Florian Cacho, G. Cailletaud, 2005, EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005..

Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

F. Andrieu, O. Weber, D. Esseni, 2013, 2013 IEEE International Electron Devices Meeting.

FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding

S. Orain, X. Federspiel, J.-C. Barbé, 2004, 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the.

Revisited RF Compact Model of Gate Resistance Suitable for High-K/Metal Gate Technology

F. Danneville, P. Scheer, C. Charbuillet, 2013, IEEE Transactions on Electron Devices.

A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

T. Skotnicki, S. Barraud, P. Dollfus, 2005, IEEE Transactions on Electron Devices.

Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies

Sébastien Gallois-Garreignot, Vincent Fiori, Komi-Atchou Ewuame, 2014, Microelectron. Reliab..

Experimental and numerical investigations on Cu/low-k interconnect reliability during copper pillar shear test

Vincent Fiori, Sebastien Gallois-Garreignot, Clement Sart, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

A. Zaka, Y. Leblebici, D. Rideau, 2012, IEEE Transactions on Electron Devices.

Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids

A. Claverie, H. Jaouen, O. Marcelot, 2007 .

Effect of voids-controlled vacancy supersaturations on B diffusion

A. Claverie, H. Jaouen, O. Marcelot, 2007 .

Electronic transport investigation of arsenic‐implanted silicon. II. Annealing kinetics of defects

G. Ghibaudo, C. Christofides, H. Jaouen, 1989 .