L. Bera

发表

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

S.C. Rustagi, R. Kumar, N. Balasubramanian, 2006, IEEE Electron Device Letters.

Strained-Si heterostructure field effect transistors

C. Maiti, S. Chattopadhyay, L. Bera, 1998 .

Vertically Stacked SiGe Nanowire Array Channel

Narayanan Balasubramanian, Navab Singh, Wei-Wei Fang, 2007 .

Formation of Ni Diffusion-Induced Surface Traps in GaN/AlxGa1−xN/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition

H. Tan, L. Bera, S. Tripathy, 2015, Journal of Electronic Materials.

Modeling and Simulation of Hetero-FETs

C. Maiti, L. Bera, S. Chattopadhyay, 2007 .

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

H. D. Banerjee, S. Maikap, C. Maiti, 2001 .

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1−xGex layers

S. Maikap, C. Maiti, L. Bera, 2000 .

Gate Dielectrics on Engineered Substrates

C. Maiti, L. Bera, S. Chattopadhyay, 2007 .

Strain Engineering in Microelectronics

C. Maiti, L. Bera, S. Chattopadhyay, 2007 .

Gate dielectrics on strained-Si/SiGe heterolayers

Goutam Kumar Dalapati, C. K. Maiti, Somenath Chatterjee, 2004 .

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

G. Lo, D. Kwong, W. Loh, 2006, IEEE Electron Device Letters.

Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates

H. D. Banerjee, S. Maikap, C. Maiti, 2003 .

High Quality Gate Dielectrics Grown by Rapid Thermal Processing Using Split-N O Technique on Strained-Si Ge Films

W. K. Choi, C. Maiti, L. Bera, 2001 .

High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si/sub 0.91/Ge/sub 0.09/ films

C. Maiti, C.S. Tan, L. Bera, 2001, IEEE Electron Device Letters.

Effect of carbon on lattice strain and hole mobility in Si1-xGex alloys

S. Banerjee, G. Kar, S. Ray, 2002 .

Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

S. L. Teo, H. Tan, L. Bera, 2016 .

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

D. Kwong, N. Balasubramanian, D. Chan, 2003 .

Al $x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

L. Bera, D. Ang, T. Bhat, 2015, IEEE Electron Device Letters.

Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates

H. Tan, L. Bera, S. Tripathy, 2014 .

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Guo-Qiang Lo, Geok Ing Ng, S. Vicknesh, 2012 .

Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

H. Tan, L. Bera, S. Tripathy, 2014 .

Strained-Si heterostructure field effect transistors

C. Maiti, S. Chattopadhyay, L. Bera, 1998 .

Pt/p-strained-Si Schottky diode characteristics at low temperature

C. Maiti, S. Chattopadhyay, S. Ray, 1997 .

Schottky diode characteristics of Ti on strained-Si

C. Maiti, S. Chattopadhyay, S. Chakrabarti, 1997 .

Self-assembled tungsten nanocrystals in high-k dielectric for nonvolatile memory application

G. Samudra, Sungjoo Lee, N. Balasubramanian, 2005 .

Microstructural characterization of rf sputtered polycrystalline silicon germanium films

W. K. Choi, A. Wee, W. Chim, 2002 .

Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

H. Tan, L. Bera, S. Tripathy, 2015 .

N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

W. K. Choi, C. Maiti, D. Antoniadis, 2001 .

Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

Y. Yeo, G. Samudra, N. Balasubramanian, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1?xGex

C. Maiti, L. Bera, S. Samanta, 2002 .

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

M. Balasubramanian, N. Balasubramanian, B. Cho, 2004 .

Structural characterisation of polycrystalline SiGe thin film

W. K. Choi, W. Chim, L. Bera, 2001 .

Growth of Silicon-Gel 1 manium Alloy Layers

N. B. Chakrabarti, S. Maikap, C. Maiti, 2001 .

Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films

W. K. Choi, A. Wee, L. Bera, 2002 .

Electrical characterization of rapid thermal oxides on Si/sub 0.887/Ge/sub 0.113/ and Si/sub 0.8811/Ge/sub 0.113/C/sub 0.0059/ alloys by capacitance-voltage and deep level transient spectroscopy techniques

W. K. Choi, L. Bera, J. Mi, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si

S. Maikap, C. Maiti, L. Bera, 2001 .

Sub-100 nm MOSFET fabrication with low temperature resist trimming process

Ranganathan Nagarajan, N. Balasubramanian, L. K. Bera, 2004 .

A comprehensive model for breakdown mechanism in HfO/sub 2/ high-k gate stacks

G. Groeseneken, K. Pey, S. De Gendt, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks

G. Groeseneken, K. Pey, S. Gendt, 2005 .

High Quality Single Crystal Al-catalyzed Si Nanowire

D. Kwong, Sungjoo Lee, B. Cho, 2007 .

Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1−x−yGexCy films

W. K. Choi, L. Bera, Cary Y. Yang, 2001 .

Tungsten nanocrystals embedded in high-k materials for memory application

G. Samudra, N. Balasubramanian, L. Bera, 2005 .

Ultrathin Oxides on Strained Epitaxial Si1–xGex Films at Low Temperature

C. Maiti, M. Mukhopadhyay, S. Ray, 1997 .

Structural characterization of rapid thermally oxidized silicon–germanium–carbon alloy films

W. K. Choi, K. Pey, L. Bera, 2000 .

Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition

W. K. Choi, S. Chua, K. Pey, 2000 .

Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes

C. K. Maiti, Sanatan Chattopadhyay, L. K. Bera, 1998 .

Schottky Barrier Height of Ti on Strained Layer Si/Si1–xGex Films

H. D. Banerjee, C. Maiti, M. Mukhopadhyay, 1997 .

Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate

H. D. Banerjee, C. Maiti, S. Ray, 1998 .

Trapping of vesicles on patterned surfaces by physisorption for potential biosensing applications

Kian Soo Ong, Zhikang Fu, Zheng Zheng Wong, 2012, 2012 Annual International Conference of the IEEE Engineering in Medicine and Biology Society.

Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1−xGex thin films

W. K. Choi, L. Bera, T. Osipowicz, 2001 .

Strain-Engineered Substrates

C. Maiti, L. Bera, S. Chattopadhyay, 2007 .

Optical characterization of as-prepared and rapid thermal oxidized partially strain compensated Si1−x−y GexCy films

W. K. Choi, L. Bera, Cary Y. Yang, 2001 .

Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications

D. Kwong, G. Samudra, Sungjoo Lee, 2004 .

Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

Minghui Hong, Qingchun Zhang, Guoxin Chen, 2006, IEEE Electron Device Letters.

Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

L. Bera, S. Tripathy, D. Ang, 2016, IEEE Transactions on Electron Devices.

Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

W. K. Choi, C. Maiti, L. Bera, 2000 .

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs

N. Singh, G. Lo, D. Kwong, 2006, 2006 International Electron Devices Meeting.

Strained-Si Heterostructure Field Effect Devices

C. K. Maiti, L. K. Bera, C. Maiti, 2007 .

Formation and Thermal Stability of Nickel Germanide on Germanium Substrate

Qingchun Zhang, Lakshmi Kanta Bera, Chunxiang Zhu, 2005 .

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

Germanium Incorporation in HfO2 Dielectric on Germanium Substrate

Qingchun Zhang, Chunxiang Zhu, L. Bera, 2006 .

Study of Germanium Diffusion in HfO 2 Gate Dielectric of MOS Device Application

Qingchun Zhang, Chunxiang Zhu, L. Bera, 2004 .

Heterostructure SiGe/SiGeC MOSFETs

C. Maiti, L. Bera, S. Chattopadhyay, 2007 .

Electrical properties of rapid thermal oxides on Si1−x−yGexCy films

W. K. Choi, L. Bera, Cary Y. Yang, 2000 .

Electrical characteristics of plasma oxidized Si1−x−yGexCy metal–oxide–semiconductor capacitors

S. Banerjee, C. Maiti, L. Bera, 1998 .

Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers

C. K. Maiti, H. D. Banerjee, L. K. Bera, 2003 .

Determination of Band Discontinuities in Silicon Heterostructures

L. Bera, S. Chatterjee, 2007 .

Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor

C. K. Maiti, L. K. Bera, S. John, 2000 .

Characterization of Strained Epitaxial Si1–xGexFilms Grown using Gas Source Molecular Beam Epitaxy

C. Maiti, M. Mukhopadhyay, S. Ray, 1997 .

Extraction of interface state density of Pt/p-strained-Si Schottky diode

C. Maiti, S. Chattopadhyay, L. Bera, 1998 .

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

D.S.H. Chan, N. Balasubramanian, N. Singh, 2006, IEEE Electron Device Letters.

Multi-Layer High-K Gate Stack Materials for Low Dit 4H-SiC Based MOSFETs

Calvin Chua Hung Ming, D. Kwong, K. Chui, 2022, Materials Science Forum.

Characterization of QST substrates at mm-wave frequencies

M. Rotaru, L. Bera, Navab Singh, 2022, Electronic Packaging Technology Conference.

Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si

C. Maiti, D. Nayak, Y. Shiraki, 1998, IEEE Electron Device Letters.

Improvement of Electrical Properties of MOCVD HfO2 by Multistep Deposition

D. Kwong, N. Balasubramanian, B. Cho, 2003 .

Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes

C. Maiti, S. Chattopadhyay, L. Bera, 1998 .

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

L. Bera, Navab Singh, U. Chand, 2023, Materials Science Forum.

Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor

L. Bera, Navab Singh, U. Chand, 2023, Materials Science Forum.

Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer

Avishek Das, G. Dalapati, C. Mahata, 2018, Journal of Alloys and Compounds.

Germanium Out-Diffusion in HfO2 and its Impact on Electrical Properties

Qingchun Zhang, Chunxiang Zhu, L. Bera, 2005 .

Planar micro-optic solar concentrator for natural daylighting systems in tropics

Jun Rong Ong, Ching Eng Png, Hong Son Chu, 2016, 2016 Asian Conference on Energy, Power and Transportation Electrification (ACEPT).

Periodic microstructures for improved lens-to-waveguide coupling efficiency in microlens array planar solar concentrators

Hong-Son Chu, Ching Eng Png, Ravi S. Hegde, 2015 .

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

N. Balasubramanian, S. Mathew, H.C. Wen, 2005, IEEE Electron Device Letters.

MOS capacitor characteristics of plasma oxide on partially strained SiGeC films

S. Banerjee, C. Maiti, L. Bera, 1998 .