D. Ji

发表

A Reduced-Order Method for Coherent Transport Using Green’s Functions

U. Hetmaniuk, M. Anantram, D. Ji, 2015, IEEE Transactions on Electron Devices.

First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)

U. Mishra, S. Keller, D. Ji, 2017, 2017 75th Annual Device Research Conference (DRC).

A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs

D. Ji, Wenwen Li, S. Chowdhury, 2018, IEEE Transactions on Electron Devices.

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

S. Keller, D. Ji, Anchal Agarwal, 2017, IEEE Transactions on Electron Devices.

Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs

D. Ji, Wenwen Li, S. Chowdhury, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Design of 1.2 kV Power Switches With Low $R_{\mathrm{{\scriptscriptstyle ON}}}$ Using GaN-Based Vertical JFET

Dong Ji, Srabanti Chowdhury, D. Ji, 2015, IEEE Transactions on Electron Devices.

A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application

D. Ji, S. Chowdhury, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K

D. Ji, S. Chowdhury, A. Newaz, 2020 .

Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

D. Ji, Yanwu Lu, Jian-Ten Peng, 2017 .

Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm2/1500 V GaN Diodes

Siwei Li, D. Ji, S. Chowdhury, 2020, IEEE Electron Device Letters.

Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

U. Mishra, S. Keller, D. Bisi, 2018, IEEE Electron Device Letters.

Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model

D. Ji, Wenwen Li, S. Chowdhury, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs

U. Mishra, S. Keller, D. Ji, 2017, IEEE Electron Device Letters.

On impact ionization and avalanche in gallium nitride

D. Ji, S. Chowdhury, 2020, Applied Physics Letters.

Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures

D. Ji, Jinlong Liu, Yanwu Lu, 2013 .

Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2013 .

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2012 .

Scattering induced by Al segregation in AlGaN/GaN heterostructures

D. Ji, Yanwu Lu, Xiwen Liu, 2015 .

Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors

D. Ji, Qinsheng Zhu, Yanwu Lu, 2012 .

On the Progress Made in GaN Vertical Device Technology

D. Ji, S. Chowdhury, 2019, Selected Topics in Electronics and Systems.

The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates

J. Maria, D. Ji, T. Borman, 2020 .

Electro-Thermal Investigation of GaN Vertical Trench MOSFETs

D. Ji, Sukwon Choi, B. Chatterjee, 2021, IEEE Electron Device Letters.

Development of High-Voltage Vertical GaN PN Diodes (invited).

J. Gallagher, A. Allerman, M. Crawford, 2020, Proposed for presentation at the Virtual 2020 Spring/Fall MRS meeting held November 27 - December 4, 2020..

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

D. Ji, S. Chowdhury, B. Ercan, 2019, Applied Physics Letters.

Vertical GaN Power Devices

D. Ji, Wenwen Li, 2020, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

M. Uren, D. Ji, Martin Kuball, 2022 .

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

D. Ji, Wenwen Li, M. Laurent, 2017, IEEE Journal of the Electron Devices Society.

Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation

Dong Ji, Srabanti Chowdhury, Stacia Keller, 2018, IEEE Transactions on Electron Devices.

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2018, IEEE Electron Device Letters.

Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET

Dong Ji, Srabanti Chowdhury, Jianyi Gao, 2016, IEEE Transactions on Electron Devices.

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

D. Ji, S. Chowdhury, 2022, Frontiers in Materials.

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Development of High-Voltage Vertical GaN PN Diodes

A. Allerman, M. Crawford, O. Aktas, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

O. Aktas, D. Ji, T. Anderson, 2022, AIP Advances.

Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode

Burcu Ercan, Juan Rivas-Davila, Dong Ji, 2020, 2020 Device Research Conference (DRC).

Experimental Determination of Velocity-Field Characteristic of Holes in GaN

D. Ji, S. Chowdhury, B. Ercan, 2020, IEEE Electron Device Letters.