Y. Kim

The ballistic nano-transistor

D. Tennant, J. Bude, K. Bourdelle, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Understanding the limits of ultrathin SiO 2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Martin L. Green, D. Muller, B. Weir, 1999 .

Progress toward 10 nm CMOS devices

A. Ghetti, P. Silverman, D.M. Tennant, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

The relentless march of the MOSFET gate oxide thickness to zero

Donald M. Tennant, A. Kornblit, Gregory Timp, 2000 .

Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology

Martin L. Green, D. Tennant, T. Sorsch, 1999 .

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

Martin L. Green, L. Feldman, B. Weir, 1993 .

Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer

Jeffrey Bokor, T. W. Sorsch, D. J. Eaglesham, 1994, Other Conferences.