K. D. Budhaaraju

Sub-femto-farad capacitance-voltage characteristics of single channel gate-all-around nano wire transistors for electrical characterization of carrier transport

N. Singh, G. Lo, D. Kwong, 2008, 2008 IEEE International Electron Devices Meeting.

Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels

N. Singh, G. Lo, D. Kwong, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).