M. Cho

发表

An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films

Suyoun Lee, Hyun-Yong Lee, J. Ha, 2010 .

The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process

J. Ha, H. Goto, K. Fujii, 2008, IEEE Photonics Technology Letters.

Origin of forward leakage current in GaN-based light-emitting devices

Hiroki Goto, Jae-Wan Choi, Seong-Moon Cho, 2006 .

Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

Jung-Hoon Song, M. Cho, Soon-Ku Hong, 2014 .

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

M. Yang, H. Makino, M. Cho, 2004 .

Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands

Hyo-Jong Lee, Hiroki Goto, Takafumi Yao, 2008 .

Electron-trap centers in ZnO layers grown by molecular-beam epitaxy

H. Makino, T. Hanada, M. Cho, 2005 .

Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios

M. Cho, T. Yao, H. Ko, 2004 .

ZnO epitaxial layers grown on c-sapphire substrate with MgO buffer by plasma-assisted molecular beam epitaxy (P-MBE)

M. Cho, T. Yao, H. Ko, 2005 .

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing ☆

H. Makino, H. Goto, M. Cho, 2004 .

Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy

H. Makino, T. Hanada, M. Cho, 2004 .

Lattice strain in bulk GaN epilayers grown on CrN/sapphire template

J. Ha, Hyo-Jong Lee, H. Goto, 2009 .

Electronic structure of the Ga1 − xCrxN studied by high-energy photoemission spectroscopy

T. Ishikawa, H. Makino, Y. Nishino, 2005 .

Control of crystal polarity in oxide and nitride semiconductors by interface engineering

M. Cho, T. Yao, T. Minegishi, 2006 .

Novel method for site-controlled surface nanodot fabrication by ion beam synthesis.

Y. Kawazoe, T. Hanada, M. Cho, 2005, Nano letters.

Fabrication of free‐standing GaN substrate using evaporable buffer layer (EBL)

J. Ha, Hyo-Jong Lee, T. Goto, 2009 .

Self-separated freestanding GaN using a NH4Cl interlayer

J. Ha, Hyo-Jong Lee, H. Goto, 2007 .

ZnO/GaN Heteroepitaxy

H. Makino, T. Hanada, M. Cho, 2004 .

Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy

H. Makino, T. Hanada, M. Cho, 2005 .

Heteroepitaxial growth of GaN on various powder compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by hydride vapor phase epitaxy

J. Ha, Hyo-Jong Lee, M. Cho, 2012, Electronic Materials Letters.

Observation of a filled electronic state in the conduction band of InN

H. Makino, A. Takeuchi, Pingping Chen, 2006 .

Improvement of hydrogen generation efficiency using GaN photoelectrochemical reaction in electrolytes with alcohol

K. Fujii, M. Cho, T. Yao, 2008 .

Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy

T. Hanada, M. Cho, T. Yao, 2003 .

Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

T. Hanada, M. Cho, T. Yao, 2004 .

Investigation of radiative and nonradiative trap centers in ZnSe:Al layers grown by molecular beam epitaxy

H. Makino, T. Hanada, M. Cho, 2004 .

Luminescence properties of ZnSe/Zns(h 1 1)A low dimensional structures

Yihong Wu, M. Shen, T. Sekiguchi, 1998 .

Surface treatment of znse substrate and homoepitaxy of znse

M. Cho, K. Arai, Y. Okada, 1997 .

Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer

H. Makino, T. Hanada, M. Cho, 2004 .

Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures

H. Makino, M. Shen, T. Goto, 1999 .

Ordering of In and Ga in Epitaxially Grown In0.53Ga0.47As Films on (001) InP Substrates

H. Makino, T. Hanada, M. Cho, 2006 .

Two-photon absorption and nonlinear optical properties of octupolar molecules.

B. Cho, M. Cho, Hochan Lee, 2001, Journal of the American Chemical Society.

Growth of ZnO and GaN Films

M. Cho, Soon-Ku Hong, A. Tachibana, 2009 .

Realization of one-chip-multiple-wavelength laser diodes with II-VI/III-V compound semiconductors

H. W. Kim, H. Makino, Y. Segawa, 2003 .

Realization of one-chip-two-wavelength light sources

H. Makino, Y. Segawa, T. Hanada, 2003 .

Structural variation of cubic and hexagonal MgxZn1−xO layers grown on MgO(111)∕c-sapphire

T. Hanada, M. Cho, T. Yao, 2005 .

Control of the ZnO nanowires nucleation site using microfluidic channels.

Hiroki Goto, Tomoyuki Yasukawa, Tomokazu Matsue, 2006, The journal of physical chemistry. B.

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

J. Ha, Hyo-Jong Lee, K. Fujii, 2009 .

Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer

S. Nagata, J. Ha, M. Cho, 2012 .

The characteristics of chemical lift off method using metallic buffer layer and its application to the vertical light emitting diodes

J. Ha, K. Fujii, M. Cho, 2008, 2008 Device Research Conference.

Novel buffer layer for the growth of GaN on c-sapphire

H. Goto, M. Cho, T. Yao, 2006 .

Chemical lift‐off of GaN epitaxial films grown on c‐sapphire substrates with CrN buffer layers

Hyun-Yong Lee, J. Ha, Hyo-Jong Lee, 2008 .

Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

J. Ha, Hyo-Jong Lee, H. Goto, 2007 .

Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer

K. Fujito, Hyun-Yong Lee, J. Ha, 2009 .

ZnSe heteroepitaxy on GaAs (110) substrate

D. Bagnall, M. Cho, T. Yao, 1998 .

Structural and optical properties of high-quality ZnTe homoepitaxial layers

T. Hanada, M. Cho, T. Yao, 2000 .

Non-alloyed Au/p-ZnSe/p-BeTe ohmic contact layers for ZnSe-based blue-green laser diodes

M. Cho, T. Yao, M. Nakajima, 1999 .

Swift isotropic heat transport of 3D graphene platform-based metal-graphene composites

J. Ha, M. Cho, Tae-Wook Kim, 2021 .

Structure and magnetic properties of Cr-doped GaN

H. Makino, T. Hanada, M. Cho, 2005 .

Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

H. Makino, T. Hanada, M. Cho, 2005 .

Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures

H. Makino, M. Shen, M. Cho, 2002 .

Growth and characterization of beryllium-based II–VI compounds

K. Park, D. Bagnall, M. Cho, 1999 .

Blue‐Green Light Emitting Diodes with New p‐Contact Layers: ZnSe/BeTe

H. Makino, M. Cho, T. Yao, 2000 .

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

Hyo-Jong Lee, Hiroki Goto, Jun-Seok Ha, 2007 .

Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

Hyun-Yong Lee, J. Ha, Hyo-Jong Lee, 2012, IEEE Photonics Technology Letters.

Relation between interdiffusion and polarity for MBE growth of GaN epilayers on ZnO substrates

H. Goto, M. Cho, Takuma Suzuki, 2004 .

Free standing GaN layers with GaN nanorod buffer layer

Hyun-Yong Lee, J. Ha, Hyo-Jong Lee, 2007 .

Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta doping

M. Cho, T. Yao, D. Oh, 2003 .

Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire

T. Egawa, M. Cho, H. Yokoi, 2006 .

Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy

S. Park, H. Goto, T. Hanada, 2007 .

Characterization of free‐standing GaN substrates prepared by self lift‐off

Hyun-Yong Lee, J. Ha, Hyo-Jong Lee, 2007 .

Electronic structure of Ga1−xCrxN investigated by photoemission spectroscopy☆

H. Makino, T. Hanada, M. Cho, 2004 .

Hybridization of Cr3d–N2p–Ga4sin the wide band-gap diluted magnetic semiconductorGa1−xCrxN

H. Makino, Y. Nishino, K. Tamasaku, 2004 .

Multiple-wavelength-transmission filters based on Si-SiO2 one-dimensional photonic crystals

Hyun-Yong Lee, Takafumi Yao, Hisao Makino, 2005 .