A. Dvurechenskii

发表

Molecular ground hole state of vertically coupled GeSi/Si self-assembled quantum dots

A. Yakimov, G. Y. Mikhalyov, A. Dvurechenskii, 2008, Nanotechnology.

Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, G. Y. Mikhalev, 2007 .

Zeeman effect for holes in a Ge/Si system with quantum dots

A. Dvurechenskii, A. Nenashev, A. F. Zinov’eva, 2003 .

Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

A. Dvurechenskii, O. Pchelyakov, A. Voitsekhovskii, 2011 .

Electronic states inGe∕Siquantum dots with type-II band alignment initiated by space-charge spectroscopy

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2006 .

Investigation of spectral absorption coefficient of KI and KV quartz glasses in IR region to upper temperature limit

A. Dvurechenskii, V. Petrov, V. Reznik, 1979 .

SiGe quantum rings on the Si(100) surface

A. Dvurechenskii, V. Volodin, V. Zinovyev, 2012 .

Hole spin relaxation in Ge quantum dots

A. Dvurechenskii, A. Nenashev, A. F. Zinov’eva, 2005 .

Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2016 .

Suppression of hole relaxation in small Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2015 .

Phonon bottleneck in p-type Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2015 .

Type-II Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, 2001 .

Interlevel Ge/Si quantum dot infrared photodetector

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2001 .

Metal-insulator transition in amorphous Si1−cMnc obtained by ion implantation

A. Yakimov, A. Dvurechenskii, 1997 .

Ge'Si quantum-dot metal-oxide-semiconductor field-effect transistor

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2002 .

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2000 .

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

A. Dvurechenskii, V. Armbrister, V. Kirienko, 2013, Nanoscale Research Letters.

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2008 .

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2007 .

Pulsed Low-energy Ion-beam Induced Nucleation and Growth of Ge Nanocrystals on SiO 2

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2007 .

Molecular beam epitaxy of silicon–germanium nanostructures

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2000 .

In situ RHEED control of self-organized Ge quantum dots

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2000 .

Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1999 .

The microstructure of vertically coupled quantum dots ensembles by EXAFS spectroscopy

A. Dvurechenskii, A. Nikiforov, K. Zhuravlev, 2011 .

Effect of pulsed laser action on hole-energy spectrum of Ge/Si self-assembled quantum dots

A. Yakimov, G. Y. Mikhalyov, A. Dvurechenskii, 2005 .

Suppression of the fractal conductivity channel and superlocalization effects in porous a-Si:H

A. Yakimov, A. Dvurechenskii, L. Shcherbakova, 1997 .

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Zh. V. Smagina, A. Dvurechenskii, S. Rudin, 2018, Semiconductors.

Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots

V. A. Zinoviev, A. Dvurechenskii, A. Zinovieva, 2018, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

A. Dvurechenskii, S. Rudin, P. Novikov, 2015, Nanotechnologies in Russia.

Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2010 .

Localization of electrons in multiple layers of self-assembled GeSi∕Si islands

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2006 .

Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots

A. Dvurechenskii, A. Nenashev, A. Bloshkin, 2006 .

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2005 .

MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2004 .

One-dimensional localization in porous a-Si1−cMnc

A. Yakimov, A. Dvurechenskii, Y. Proskuryakov, 1998 .

Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, A. Yakimov, 2010 .

Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2022, Journal of Luminescence.

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

A. Dvurechenskii, V. Timofeev, A. Yakimov, 2014 .

On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots

A. Yakimov, A. Dvurechenskii, A. Bloshkin, 2014 .

Photostimulated mesoscopic current fluctuations in a-Si based microstructures

A. Yakimov, A. Dvurechenskii, N. Stepina, 1996 .

Determination of the composition and strains in GexSi1−x-based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface

A. Yakimov, A. Dvurechenskii, G. Y. Mikhalev, 2007 .

Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

V. V. Ulyanov, A. Yakimov, A. Dvurechenskii, 2004 .

Ge dots on Si (111) and (100) surfaces with SiO2 coverage: Raman study

V. V. Ulyanov, A. Yakimov, A. Dvurechenskii, 2004 .

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Zh. V. Smagina, A. Dvurechenskii, V. Volodin, 2004 .

Microstructure of quantum dots ensembles by EXAFS spectroscopy

A. Dvurechenskii, A. Nikiforov, K. Zhuravlev, 2009 .

Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

A. Dvurechenskii, A. Zinovieva, A. Mudryi, 2022, JETP Letters.

Si-Ge-GaAs nanoheterostructures for photovoltaic cells

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2005 .

Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2003 .

GERMANIUM SELF-ASSEMBLED QUANTUM DOTS IN SILICON FOR MID-INFRARED PHOTODETECTORS

A. Dvurechenskii, A. Yakimov, 2002 .

Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

A. Dvurechenskii, A. Bloshkin, A. Yakimov, 2019, Semiconductors.

Laser annealing of epitaxial CaF2 films on Si

Zh. V. Smagina, A. Dvurechenskii, S. L. Prakopyeu, 2021 .

Simulation of ion-irradiation stimulated Ge nanocluster formation in gate oxides containing GeO2

A. Larsen, A. Dvurechenskii, K. Heinig, 2002 .

Hopping conductivity and Coulomb correlations in 2D arrays of Ge/Si quantum dots

A. A. Sherstobitov, A. Yakimov, A. Dvurechenskii, 2005 .

Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A. Dvurechenskii, A. Mudryi, V. Zinov’ev, 2013 .

Formation of ordered groups of quantum dots during Ge/Si heteroepitaxy

A. Dvurechenskii, A. Mudryi, V. Zinov’ev, 2013, Optoelectronics, Instrumentation and Data Processing.

Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots – Molecular Dynamics Calculations Using High-Efficiency Algorithms

A. Dvurechenskii, P. Novikov, K. Pavsky, 2019, 2019 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon).

Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

A. V. Dvurechenskii, P. L. Novikov, Zh. V. Smagina, 2018 .

Nucleation and growth of ordered groups of SiGe quantum dots

A. Dvurechenskii, A. Mudryi, V. Zinovyev, 2015 .

Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

A. Dvurechenskii, U. Kreissig, A. Gutakovskii, 2000 .

Phononless hopping conduction in two-dimensional layers of quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2003 .

Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots

Zh. V. Smagina, A. Dvurechenskii, A. Nikiforov, 2007 .

Electronic structure of Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2002 .

Longitudinal conductivity of Ge/Si heterostructures with quantum dots

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1996 .

Conductance oscillations in Ge/Si heterostructures containing quantum dots

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1994 .

Silicon-Based Nanoheterostructures With Quantum Dots

A. Yakimov, A. Dvurechenskii, 2017 .

Evidence for two-dimensional correlated hopping in arrays of Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2003 .

Stark effect in type-II Ge/Si quantum dots

Alexander G. Milekhin, Dietrich R. T. Zahn, A. V. Dvurechenskii, 2003 .

Long-range Coulomb interaction in arrays of self-assembled quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2000 .

Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

J. V. Smagina, A. Dvurechenskii, A. Nenashev, 2008 .

Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2000 .

Hopping conduction and field effect in Si modulation-doped structures with embedded Ge quantum dots

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1999 .

Bonding state of a hole in Ge/Si double quantum dots

A. Yakimov, A. Dvurechenskii, A. Dvurechenskii, 2007 .

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001)

V. V. Ulyanov, A. Yakimov, A. Dvurechenskii, 2006, Nanotechnology.

Inelastic resonant tunneling in amorphous silicon microstructures

A. Yakimov, A. Dvurechenskii, N. Stepina, 1994 .

Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2000 .

Light absorption related to hole transitions in quantum dots and impurity centers in quantum wells under external excitation

A. Zhukov, V. Shalygin, A. Sofronov, 2009 .

Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2018 .

Localization of electrons in dome-shaped GeSi/Si islands

A. Dvurechenskii, A. Bloshkin, P. Kuchinskaya, 2015 .

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

A. Dvurechenskii, A. Bloshkin, V. Armbrister, 2014 .

Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors

A. Dvurechenskii, A. Nikiforov, V. Timofeev, 2012 .

The Meyer-Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, G. Y. Mikhalev, 2004 .

Melting of nanocrystals embedded in a crystal matrix heated by nanosecond laser pulses

V. A. Zinoviev, Zh. V. Smagina, A. Dvurechenskii, 2012 .

Modelling of layer-by-layer sputtering of Si(111) surfaces under irradiation with low-energy ions

A. Dvurechenskii, K. Heinig, V. Zinovyev, 1994 .

Quantum dot Ge/Si heterostructures

A. Yakimov, A. Dvurechenskii, 2001 .

Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (30 May 2001)

Vladimir A. Volkov, M. Henini, G. Hill, 2001 .

Depth distribution of point defects in Si bombarded by high-energy N5+ and Si5+ ions

A. Dvurechenskii, R. Grötzschel, F. Herrmann, 1998 .

Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1998 .

Magnetic field effect on the slow relaxation of photoconductance in tunnel coupled quantum dot arrays

A. Dvurechenskii, A. Nenashev, A. Zinovieva, 2020 .

Non-equilibrium transport in arrays of type-II Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2004 .

Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014 .

Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates

J. V. Smagina, A. Dvurechenskii, A. Kozhukhov, 2011 .

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2011 .

Si-based light emitters synthesized with Ge+ ion bombardment

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2021, Journal of Applied Physics.

Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

A. Dvurechenskii, V. Zinovyev, P. Kuchinskaya, 2013, Physical review letters.

Hydrogen passivation of self-assembled Ge/Si quantum dots

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2014 .

Enhanced oscillator strength of interband transitions in coupled Ge∕Si quantum dots

A. Yakimov, A. Dvurechenskii, A. A. Bloshsin, 2008 .

Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2021, Semiconductors.

Spin relaxation mechanism of hopping transport in a 2D asymmetric quantum dot array

A. Dvurechenskii, A. Nenashev, A. F. Zinov’eva, 2007 .

Hole states in Ge∕Si quantum-dot molecules produced by strain-driven self-assembly

A. Yakimov, G. Y. Mikhalyov, A. Dvurechenskii, 2007 .

Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

Zh. V. Smagina, A. Dvurechenskii, S. Dyakov, 2022, Semiconductors.

Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

A. Dvurechenskii, S. Gusev, M. Stepikhova, 2019, Semiconductors.

Electromodulated reflectance study of self-assembled Ge/Si quantum dots

A. Dvurechenskii, A. Bloshkin, A. Nikiforov, 2011, Nanoscale research letters.

Mid-infrared optical resonances in quantum dot photodetectors coupled with metallic gratings with different aperture diameters

A. Dvurechenskii, A. Yakimov, V. Kirienko, 2020 .

Quantum dot based mid-infrared photodetector enhanced by a hybrid metal-dielectric optical antenna

A. Dvurechenskii, A. Bloshkin, V. Kirienko, 2020, Journal of Physics D: Applied Physics.

Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

A. Dvurechenskii, A. Bloshkin, A. Yakimov, 2019, JETP Letters.

Localization of Surface Plasmon Waves in Hybrid Photodetectors with Subwavelength Metallic Arrays

A. Dvurechenskii, A. Yakimov, V. Kirienko, 2018, JETP Letters.

Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons.

J. Hartmann, A. Dvurechenskii, J-M Hartmann, 2017, Optics express.

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

A. V. Dvurechenskii, V. V. Kirienko, V. A. Armbrister, 2017 .

Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2017 .

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

A. Dvurechenskii, A. Bloshkin, V. Timofeev, 2012, Nanoscale Research Letters.

Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces

A. Dvurechenskii, V. Armbrister, A. Yakimov, 2016 .

The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

A. Dvurechenskii, 2017 .

Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2000 .

Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots

A. Dvurechenskii, S. Kondratenko, A. Nikiforov, 2008, Nanotechnology.

Spatially indirect excitons in self-assembled Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2001 .

Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

A. Dvurechenskii, A. Bloshkin, V. Timofeev, 2014, Nanoscale Research Letters.

Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2012 .

Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2022, Journal of Applied Physics.

Formation and structural features of silicon quantum dots in germanium

A. Dvurechenskii, A. F. Zinov’eva, V. Volodin, 2013, Optoelectronics Instrumentation and Data Processing.

Germanium Self-Assembled Quantum Dots in Silicon for Nano- and Optoelectronics

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2006 .

Ge/Si photodiodes and phototransistors with embedded arrays of germanium quantum dots for fiber-optic communication lines

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2005 .

Surface reconstruction induced by a pulsed low-energy ion beam during Si(111) molecular beam epitaxy

A. Dvurechenskii, V. Markov, V. Kudryavtsev, 1999 .

Interband absorption in charged Ge/Si type-II quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2001 .

SiGe Nanodots in Electro-Optical SOI Devices

A. Yakimov, A. Dvurechenskii, P. Novikov, 2007 .

Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

J. Stuchlík, A. Dvurechenskii, V. Volodin, 2016, Optoelectronics, Instrumentation and Data Processing.

Homoepitaxy on Porous Silicon with a Buried Oxide Layer: Full-Wafer Scale SOI

A. Dvurechenskii, A. Gutakovskii, L. Sokolov, 2000 .

Study of Porous Silicon Formation and Silicon-on-Porous Silicon Epitaxy (Computational Modelling)

V. A. Zinoviev, A. Dvurechenskii, P. Novikov, 2000 .

Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2001 .

Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2011 .

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014 .

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014, Optoelectronics, Instrumentation and Data Processing.

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2009 .

Stark Spectroscopy of Ge/Si(001) Self-Assembled Quantum Dots

V. V. Ulyanov, D. Zahn, A. Yakimov, 2003 .

Optical Properties Of Arrays Of Ge/Si Quantum Dots In Electric Field

A. Yakimov, A. Dvurechenskii, 2003 .

Oscillations of hopping conductance in an array of charge-tunable self-assembled quantum dots

A. Dvurechenskii, A. Nikiforov, C. J. Adkins, 1999 .

Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100)

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 1998 .

Many-electron Coulomb correlations in hopping transport along layers of quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2003 .

Excitons in charged Ge/Si type-II quantum dots

A. Yakimov, A. Dvurechenskii, A. Nenashev, 2000 .

Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35 layer

A. V. Dvurechenskii, V. V. Kirienko, A. I. Nikiforov, 2011 .

Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy

A. Dvurechenskii, T. Malin, K. Zhuravlev, 2016 .

Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots

A. Yakimov, A. Dvurechenskii, A. Nikiforov, 2012 .

Calculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si coupled quantum dots

A. Dvurechenskii, A. Bloshkin, A. Yakimov, 2010 .

Asymmetry of single-particle hole states in a strained Ge/Si double quantum dot

A. Dvurechenskii, A. Bloshkin, A. Yakimov, 2008 .

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

Zh. V. Smagina, A. Dvurechenskii, A. Zinovieva, 2018, Semiconductors.

Electronic properties of silicon with ultrasmall germanium clusters

A. Dvurechenskii, S. Grinyaev, V. Brudnyi, 2005 .

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2002 .

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2004 .

SiGe quantum rings on the Si(100) surface

A. Dvurechenskii, A. Nenashev, V. Volodin, 2012, Russian microelectronics.

Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

V. Shalygin, A. Sofronov, P. Werner, 2012 .

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

V. A. Zinoviev, A. Dvurechenskii, M. Voelskow, 2019, Journal of Experimental and Theoretical Physics.

Hopping conduction and resonant tunnelling in amorphous silicon microstructures

A. Yakimov, A. Dvurechenskii, N. Stepina, 1994 .

Tailoring the optical field enhancement in Si-based structures covered by nanohole arrays in gold films for near-infrared photodetection

A. Dvurechenskii, A. Yakimov, A. Bloshkin, 2020, Photonics and Nanostructures - Fundamentals and Applications.

Preparation and transport properties of oriented buckypapers with single walled carbon nanotubes

A. Dvurechenskii, M. Predtechenskiy, V. Kirienko, 2019, Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering.