Jun Chen

发表

Atomistic modeling of the (a+c) -mixed dislocation core in wurtzite GaN

Pierre Ruterana, P. Ruterana, I. Belabbas, 2007 .

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Deren Yang, T. Sekiguchi, Jun Chen, 2004 .

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Deren Yang, T. Sekiguchi, R. Xie, 2005 .

Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon

T. Sekiguchi, Jun Chen, M. Fukuzawa, 2008 .

Growth and Measurement of Mg Doped AlGaN/GaN Superlattice with Low Resistiviy

Jun Chen, 2012 .

Study on the P-Type Doping of AlGaN/GaN Superlattice for Blue LED

Jun Chen, 2011 .

Potential energy of two structures of Σ = 11〈0 1 1〉 tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods

Jun Chen, G. Nouet, A. Hairie, 1998 .

Comparison of two O(N) methods for total-energy semi-empirical tight-binding calculation

A. Béré, Jun Chen, G. Nouet, 1998 .

Polarity conversion of hydride vapor phase epitaxy growing GaN via growth interruption modulation

P. Ruterana, Jun Chen, G. Nouet, 2008 .

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

T. Sekiguchi, Jun Chen, T. Suemasu, 2011 .

Microstructure variation in fused silica irradiated by different fluence of UV laser pulses with positron annihilation lifetime and Raman scattering spectroscopy

Jun Chen, Qihua Zhu, Wanguo Zheng, 2016 .

BUCKLING MORPHOLOGIES AND INTERFACIAL PROPERTIES OF SILICON NITRIDE FILMS DEPOSITED ON FLOAT GLASS SUBSTRATES

Jun Chen, Qixiang Chen, Senjiang Yu, 2015 .

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

S. Delage, P. Ruterana, Jun Chen, 2019, Journal of Applied Physics.

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020 .

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Xuegong Yu, Tao Wang, Jun Chen, 2021, physica status solidi (RRL) – Rapid Research Letters.

Misorientation dependence grain boundary complexions in <111> symmetric tilt Al grain boundaries

M. Yacamán, A. Ponce, Jun Chen, 2019, Acta Materialia.

Growth of high-quality thick GaN using a tungsten interlayer

P. Ruterana, Jun Chen, G. Nouet, 2006 .

Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques

T. Sekiguchi, Jun Chen, 2015 .

K. Yamabe, Y. Nara, N. Fukata, 2009 .

Analysis of strain in sub-grains with variable misorientation in GaN epilayers by digital processing of HRTEM images

P. Ruterana, Jun Chen, G. Nouet, 2000 .

Pre-existing and process induced defects in high-k gate dielectrics ∼direct observation with EBIC and impact on 1/f noise∼

T. Chikyow, Y. Ohji, J. Yugami, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

K. Yamabe, N. Fukata, T. Sekiguchi, 2009 .

Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

T. Chikyow, K. Yamabe, Y. Nara, 2009, IEEE International Reliability Physics Symposium.

Resistive switching behaviour of highly epitaxial CeO2 thin film for memory application

F. Wei, M. Yang, Hongbin Zhao, 2014 .

Structural and electronic properties of wurtzite GaX (X = N, P, As, Sb, Bi) under in-plain biaxial strains

Zhongyuan Yu, Jun Chen, Shumin Wang, 2014 .

Influence of copper precipitation on oxygen precipitation in Czochralski silicon

Deren Yang, Jun Chen, D. Que, 2004 .

Nickel precipitation in large-diameter Czochralski silicon

Deren Yang, Jun Chen, D. Que, 2004 .

Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD

T. Nagata, T. Chikyow, Jun Chen, 2020, Japanese Journal of Applied Physics.

Grain Boundaries in Multicrystalline Si

T. Sekiguchi, Jun Chen, M. Yamada, 2009 .

Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon

T. Sekiguchi, Jun Chen, Jiho Chang, 2009 .

Recombination activity of Σ3 boundaries in boron-doped multicrystalline silicon: Influence of iron contamination

Deren Yang, T. Sekiguchi, Jun Chen, 2005 .

Electron-beam-induced current study of grain boundaries in multicrystalline silicon

T. Sekiguchi, Jun Chen, F. Yin, 2004 .

Copper precipitation in large-diameter Czochralski silicon

Deren Yang, Jun Chen, Z. Xi, 2005 .

Effect of Σ3 generation on random grain boundaries in multicrystalline silicon

T. Sekiguchi, Jun Chen, Xianjia Luo, 2016 .

Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds

T. Sekiguchi, Jun Chen, H. Harada, 2015 .

Structural stability and electronic properties of the (0 0 0 1) inversion domain boundary in III-nitrides

P. Ruterana, Jun Chen, P. Anglade, 2018, Computational Materials Science.

Stable single atomic silver wires assembling into a circuitry-connectable nanoarray

Y. Bando, T. Sekiguchi, D. Golberg, 2021, Nature communications.

Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020, Journal of Electronic Materials.

Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence

T. Sekiguchi, Jun Chen, W. Yi, 2019, Applied Physics Express.

Effect of Introducing β-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi2/n-Si Heterointerface

T. Sekiguchi, Jun Chen, T. Suemasu, 2011 .

On the stress induced InGaN/GaN quantum wells and quantum dots

P. Ruterana, Jun Chen, G. Nouet, 2007 .

Segregation behaviors and radial distribution of dopant atoms in silicon nanowires.

N. Fukata, T. Sekiguchi, Jun Chen, 2011, Nano letters.

Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence

T. Sekiguchi, Jun Chen, S. Ito, 2019, Journal of Physics D: Applied Physics.

Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy

T. Sekiguchi, A. Ogura, Jun Chen, 2015 .

Structure and chemical states of highly eptiaxial CeO2(001) films grown on SrTiO3 substrate by laser molecular beam epitaxy

F. Wei, Jun Chen, Jun Zhang, 2013 .

Structural stability and mechanical property of Ni(111)–graphene–Ni(111) layered composite: A first-principles study

J. Zhuang, Jun Chen, Ximing Rong, 2015 .

Al-doping influence on crystal growth of Ni–Al alloy: Experimental testing of a theoretical model*

J. Zhuang, Jun Chen, Ximing Rong, 2015 .

Optical polarized properties related to the oxygen vacancy in the CaMoO4 crystal

Jun Chen, Ting-yu Liu, Feinan Yan, 2009 .

Atomic core structure of 90° -bent screw threading dislocations in wurtzite GaN

P. Ruterana, I. Belabbas, Jun Chen, 2006 .

Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Density-functional tight-binding calculations of electronic states associated with grain boundaries in GaN

Thomas Frauenheim, Jean Koulidiati, Pierre Ruterana, 2005 .

Orthorhombic C36: a sp2–sp3 carbon with pressure-induced metallization and superconductivity

Jun Chen, Xudong Wei, Kun Luo, 2021, Journal of Materials Science.

Photonic band gap structures in the Thue-Morse lattice

Qian Gong, Q. Gong, Jun Chen, 2007 .

Role of c-screw dislocations on indium segregation in InGaN and InAlN alloys

P. Ruterana, Jun Chen, H. Lei, 2010 .

Electronic structure and metallization effects at threading dislocation cores in GaN

I. Belabbas, Jun Chen, G. Nouet, 2014 .

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

P. Komninou, T. Karakostas, E. Kalesaki, 2011 .

Influences of the biaxial strain and c-screw dislocation on the clustering in InGaN alloys

P. Ruterana, Jun Chen, H. Lei, 2010 .

Electronic structure and optical properties of boron-sulfur symmetric codoping in 4 × 4 graphene systems

Jun Chen, P. Lu, Lihong Han, 2015 .

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

M. Boćkowski, T. Sekiguchi, Jun Chen, 2022, Journal of Applied Physics.

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Bin Chen, T. Sekiguchi, Jun Chen, 2014 .

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Bin Chen, T. Sekiguchi, Jun Chen, 2010, Journal of Electronic Materials.

Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon

K. Kimoto, T. Sekiguchi, Jun Chen, 2009 .

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Bin Chen, T. Sekiguchi, Jun Chen, 2008 .

Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film

T. Sekiguchi, Jun Chen, H. Okumura, 2008 .

Energetics of the 30∘ Shockley partial dislocation in wurtzite GaN

P. Ruterana, P. Komninou, I. Belabbas, 2006 .

Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.

P. Ruterana, X. Wallart, Jun Chen, 2013, ACS applied materials & interfaces.

Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains

Zhongyuan Yu, Jun Chen, Shumin Wang, 2014 .

Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

T. Sekiguchi, Jun Chen, W. Yi, 2020 .

(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

T. Chikyow, K. Yamabe, N. Fukata, 2010 .

Magnetic properties of ZnO nanowires with Li dopants and Zn vacancies

Jun Chen, P. Lu, Chuang-hua Yang, 2016 .

Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Deren Yang, T. Sekiguchi, Jun Chen, 2005 .

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

T. Sekiguchi, Jun Chen, K. Kakimoto, 2014 .

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

T. Sekiguchi, Jun Chen, K. Kakimoto, 2014 .

10 cm Diameter Mono Cast Si Growth and its Characterization

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Energy of the Two Variants 11A and 11B in Silicon and Germanium by the Semi-Empirical Tight-Binding Method

Jun Chen, G. Nouet, A. Hairie, 2002 .

Potential Energy Calculation of two Structures of the Σ=11 Tilt Grain Boundary in Silicon and Germanium

Jun Chen, G. Nouet, A. Hairie, 1997 .

Mechanical stabilities and nonlinear properties of monolayer Gallium sulfide under tension

Jun Chen, P. Lu, Chuang-hua Yang, 2015 .

Mg diffusion and activation along threading dislocations in GaN

Ashutosh Kumar, T. Sekiguchi, Jun Chen, 2020 .

The dislocations of low-angle grain boundaries in GaN epilayers: a HRTEM quantitative study and finite element stress state calculation

P. Ruterana, Jun Chen, G. Nouet, 2002 .

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

T. Sekiguchi, Jun Chen, Bin Chen, 2009 .

The [10-10] Edge Dislocation in the Wurtzite Structure: A High-Resolution Transmission Electron Microscopy Investigation of [0001] Tilt Grain Boundaries in GaN and ZnO

P. Ruterana, Jun Chen, Siqian Li, 2019, Acta Materialia.

Light-induced coloration and transformation process in PWO 4 crystals and the effects of the defect pair V Pb -V O

Jun Chen, Tingyu Liu, Xi-qi Feng, 2003 .

Structural and Optical Properties of Point Defects in α-SiO 2 Cluster

Jun Chen, P. Lu, Liyuan Wu, 2015 .

Investigation of Si Dendrites by Electron-Beam-Induced Current

T. Sekiguchi, Jun Chen, K. Fujiwara, 2018, Crystals.

The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures

P. Komninou, I. Belabbas, Jun Chen, 2013 .

A new atomistic model for the threading screw dislocation core in wurtzite GaN

I. Belabbas, Jun Chen, G. Nouet, 2012 .

Local electronic structure of threading screw dislocation in wurtzite GaN

P. Ruterana, I. Belabbas, A. Béré, 2006 .

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

T. Sekiguchi, Jun Chen, T. Ohkubo, 2023, Journal of Applied Physics.

Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion

T. Sekiguchi, Jun Chen, W. Yi, 2019, Applied Physics Express.

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Xuegong Yu, Jun Chen, Peng Wang, 2021 .

Diffusion behavior of ammonium group and its interaction mechanisms with intrinsic defects in fused silica

Jun Chen, Weizheng Wang, P. Lu, 2016 .

Structural and electronic properties of peroxy linkage defect and its interconversion in fused silica

P. Guan, Jun Chen, Weizheng Wang, 2016 .

50 cm Size Seed Cast Si Ingot Growth and its Characterization

T. Sekiguchi, Jun Chen, K. Kakimoto, 2015 .

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots

T. Sekiguchi, Jun Chen, Y. Miyamura, 2014 .

Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon

T. Sekiguchi, Jun Chen, M. Yamada, 2010 .

Research on fabrication and properties of nanoporous GaN epilayers

P. Ruterana, Jun Chen, G. Nouet, 2006 .

Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk

T. Sekiguchi, Jun Chen, T. Suemasu, 2008 .

Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current

T. Sekiguchi, Jun Chen, T. Suemasu, 2008 .

Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching

T. Sekiguchi, Jun Chen, S. Ito, 2016 .

Doping and segregation of impurity atoms in silicon nanowires

N. Fukata, T. Sekiguchi, Jun Chen, 2009 .

Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon

T. Sekiguchi, Jun Chen, 2007 .

Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction

Heiji Watanabe, K. Kajiwara, T. Sekiguchi, 2012 .

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si

T. Sekiguchi, Jun Chen, S. Ito, 2012 .

Electron-Beam-Induced Current

T. Sekiguchi, Jun Chen, 2018 .

High quality multicrystalline silicon grown by multi-stage solidification control method

Takashi Sekiguchi, Jun Chen, T. Sekiguchi, 2004 .

Enhanced red electroluminescence from a polycrystalline diamond film/Si heterojunction structure

Xiangyang Ma, Deren Yang, T. Sekiguchi, 2007 .

Control of extended defects in cast multicrystalline silicon using polycrystalline template

T. Sekiguchi, Jun Chen, H. Harada, 2015 .

Electron-beam-induced current study of grain boundaries in multicrystalline Si

Deren Yang, T. Sekiguchi, Jun Chen, 2007 .

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary.

H. Morkoç, P. Ruterana, Jun Chen, 2018, ACS applied materials & interfaces.

Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO

P. Ruterana, Jun Chen, H. Lei, 2018 .

Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN

P. Ruterana, Jun Chen, G. Nouet, 2003 .

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m‐Plane GaN Substrate

T. Sekiguchi, Jun Chen, S. Ito, 2021, physica status solidi (a).

Core properties and the role of screw dislocations in the bulk n-type conductivity in InN.

I. Belabbas, Jun Chen, L. Pizzagalli, 2019, Physical chemistry chemical physics : PCCP.

Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN

P. Ruterana, Jun Chen, H. Lei, 2023, AIP Advances.

Stable structure and optical properties of fused silica with NBOHC-E′ defect*

Jun Chen, Weizheng Wang, P. Lu, 2016 .

Analysis of faceting of grain boundaries in GaN

P. Ruterana, A. Béré, Jun Chen, 2004 .

Theoretical analysis of tilt grain boundaries in GaN at the atomic scale

P. Ruterana, Jun Chen, G. Nouet, 2002 .

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

N. Fukata, T. Sekiguchi, Jun Chen, 2006 .

A Theoretical Investigation of the Miscibility and Structural Properties of InxAlyGa1−x−yN Alloys

P. Ruterana, A. Béré, Jun Chen, 2018 .

The methods to detect vacuum polarization by evanescent modes

Jun Chen, G. Nouet, Xunya Jiang, 2011, 1110.4731.

FE simulation of InGaN QD formation at the edge of threading dislocation in GaN

P. Ruterana, Jun Chen, G. Nouet, 2007 .

Ionization energy of GaN point defects

P. Ruterana, J. Koulidiati, I. Belabbas, 2007 .

Energetic calculation of coincidence grain boundaries with a modified Stillinger-Weber potential

P. Ruterana, Jun Chen, G. Nouet, 2001 .

Recombination behavior of nickel in cast multicrystalline silicon

Deren Yang, T. Sekiguchi, Jun Chen, 2006 .

Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

P. Ruterana, Jun Chen, G. Nouet, 2006 .

Characterization of thick HVPE GaN films

P. Ruterana, Jun Chen, G. Nouet, 2004 .

Structural analysis of thick GaN films grown by hydride vapour phase epitaxy

P. Ruterana, Jun Chen, G. Nouet, 2004 .

InN clusters in InxGa1-xN quantum wells: analysis of bond lengths

P. Ruterana, I. Belabbas, Jun Chen, 2007 .

The effect of N-vacancy and In aggregation on the properties of InAlN

P. Ruterana, Jun Chen, R. Mohamad, 2020, Computational Materials Science.

Stillinger-Weber parameters for In and N atoms

Jun Chen, Pierre Ruterana, P. Ruterana, 2006 .

Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires

S. Kamiyama, T. Sekiguchi, Jun Chen, 2019, Applied Physics Express.

Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

P. Ruterana, A. Béré, Jun Chen, 2017 .

New core configurations of the c-edge dislocation in wurtzite GaN

P. Ruterana, I. Belabbas, Jun Chen, 2006 .

Investigation of native defects and impurities in X-N (X = Al, Ga, In)

Jun Chen, P. Lu, Jianjun Wang, 2020 .

Atomic structure of dislocations in nitride semiconductors

P. Ruterana, I. Belabbas, A. Béré, 2006 .

Nonlinear Transport of Short Period AlGaN/GaN Superlattice as a Terahertz Oscillator

Jun Chen, 2011 .

Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

K. Yamabe, Y. Nara, N. Fukata, 2008 .