I. Devos

Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach

A. Mauger, A. Mauger, M. Camara, 2002 .

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

K. Bouzehouane, S. Fusil, A. Barthélémy, 2007, 0712.0223.

Interface between a polar perovskite oxide and silicon from monoatomic lines

P. Boulenc, I. Devos, 2006, cond-mat/0607609.

Lithium insertion mechanism in CoSb3 analysed by 121Sb Mössbauer spectrometry, X-ray absorption spectroscopy and electronic structure calculations

M. Heilemann, I. Devos, J. Jumas, 2004 .

Templates for LaAlO3 epitaxy on silicon

P. Boulenc, I. Devos, P. Boulenc, 2007, Microelectron. Reliab..

Charge imbalance at oxide interfaces: How nature deals with it

M. Casanove, K. Bouzehouane, S. Fusil, 2007 .