C. Sénémaud

发表

? x-ray fluorescence spectra of the ? - ? chalcogenide system

A. Gheorghiu, P. Lippens, J. Jumas, 1996 .

Nomenclature, symbols, units and their usage in spectrochemical analysis - VIII. Nomenclature system for X-ray spectroscopy (Recommendations 1991)

R. Jenkins, R. Manne, C. Sénémaud, 1991, Powder Diffraction.

Electronic structure of silicon nitride studied by both soft x‐ray spectroscopy and photoelectron spectroscopy

A. Gheorghiu, C. Sénémaud, G. Dufour, 1993 .

IUPAC—nomenclature system for x‐ray spectroscopy

R. Manne, C. Sénémaud, R. Jenkins, 1991 .

Calculation of the densities of states of a-Si1 − yCy(:H) alloys and comparison with measured X-ray spectra

D. Papaconstantopoulos, C. Sénémaud, H. Ardelean, 2000 .

Electronic structure of chalcogenide compounds from the system Tl2S-Sb2S3 studied by XPS and XES☆

A. Gheorghiu, P. Lippens, J. Olivier-Fourcade, 1995 .

Plasmon satellite band in X-ray K emission spectra of magnesium and aluminium

C. Sénémaud, M. Lima, 1974 .

Reflective properties of beryl and gypsum crystals in the 1 keV photon energy region

C. Sénémaud, E. Belin, S. Zuckerman, 1984 .

X-ray photoabsorption in metallic aluminium, polycristalline and amorphous Al2O3

C. Sénémaud, M. Lima, 1975 .

X-ray absorption spectroscopy study of Ge empty states in crystalline and amorphous phases, amorphous Ge:H and Si1−xGex:H

C. Sénémaud, C. Cardinaud, E. Belin, 1985 .

Electronic structure studies of plasma-deposited amorphous silicon

B. Drévillon, C. Sénémaud, M. Khodja, 1986 .

Electronic structure studies of amorphous and microcrystalline germanium

B. Drévillon, C. Sénémaud, C. Godet, 1987 .

Electronic structure of amorphous Si1−xGex: H alloys studied by soft X-ray and photoelectron spectroscopies

C. Cardinaud, C. Sénémaud, G. Villela, 1986 .

Photoelectron spectroscopy study of amorphous GaAs and Ge

A. Gheorghiu, C. Sénémaud, E. Belin, 1985 .

X-Ray Spectra of Amorphous and Crystalline GaP

A. Gheorghiu, C. Sénémaud, E. Belin, 1981 .

Experimental density of states of liquid silicon

C. Sénémaud, C. F. Hague, H. Ostrowiecki, 1980 .

Electronic distribution of SiO by x-ray spectroscopy

C. Sénémaud, M. Lima, 1976 .

Local order and H-bonding in N-rich amorphous silicon nitride

A. Gheorghiu, C. Sénémaud, M. Fang, 1993 .

Electronic Structure of Amorphous Insulators and Semiconductors by X-Ray Photoelectron and Soft X-Ray Spectroscopies

C. Sénémaud, 1997 .

Ru, Rh, Pd, Os, Ir, and Pt Isotopes

C. Sénémaud, J. Blaise, J. Wyart, 1988 .

Alloying effects on the electronic structure of a-Si1−xNx:H films prepared by a mercury-photosensitized decomposition method

J. Perrin, A. Gheorghiu, C. Sénémaud, 1989 .

Local order determination in SiCN(AlY) laser-synthesized nanopowders by x-ray photoemission spectroscopy

N. Herlin‐Boime, C. Sénémaud, M. Mayne, 2000 .

Comparison of theoretical and experimental electronic distributions of Si - Ni and Si - Er alloys

A. Gheorghiu, D. Papaconstantopoulos, C. Sénémaud, 1996 .

Study of the electronic structure of a-Si1-yNiy:H alloys by XPS and XES

A. Gheorghiu, C. Sénémaud, E. Davis, 1995 .

X-ray K absorption spectra of silicon in Si, SiO and SiO2

J. Roger, C. Sénémaud, A. Cachard, 1974 .

Atomic configurations and local order in laser‐synthesized Si, Si‐N, Si‐C, and Si‐C‐N nanometric powders, as studied by x‐ray‐induced photoelectron spectroscopy and extended x‐ray‐absorption fine‐structure analysis

A. Gheorghiu, C. Sénémaud, C. Reynaud, 1992 .

Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy

A. Gheorghiu, C. Sénémaud, M. Khodja, 1992 .

Effects of heat treatment on the electronic structure of nanometric Si/C/N powders by x-ray photoelectron spectroscopy

C. Sénémaud, G. Dufour, N. Herlin, 1998 .

Local order studies of C-rich amorphous silicon–carbon thin films

C. Sénémaud, C. Godet, J. Bourée, 1998 .

The incorporation of carbon in a-Si:H enhanced by boron doping

A. Gheorghiu, B. Drévillon, C. Sénémaud, 1991 .

Densities of states of semiconductors by soft X-ray spectroscopy

C. Sénémaud, E. Belin, 1990 .

Influence of π-bonded clusters on the electronic properties of diamond-like carbon films

A. Matthews, A. Gheorghiu, C. Colliex, 1993 .

Studies of the density of states at the band edges and in the pseudo-gap in a-SiGe:H alloys by combined photothermal deflection spectroscopy and X-ray spectroscopy

I. Ardelean, A. Gheorghiu, C. Sénémaud, 1989 .

Alloying effects on the optical absorption edge of glow-discharge a-Si1-xGex: H

C. Sénémaud, M. Galin, L. Chahed, 1983 .

X-rays spectroheliograms in lines of Mg xi and Mg xii

C. Sénémaud, C. Bonnelle, J. Hénoux, 1973 .

Local Atomic Configuration in Laser Synthesized Si/C/N Powders Studied by X-Ray Photoelectron Spectroscopy

A. Gheorghiu, C. Sénémaud, G. Dufour, 1997 .

A comparison of experimental and theoretical densities of states in CoSi2

F. Cyrot-Lackmann, A. Pasturel, J. Veuillen, 1990 .

Copper-induced changes in the properties of arsenic chalcogenides

C. Sénémaud, G. Adriaenssens, P. Hertogen, 1998 .

Ru, Rh, Pd, Os, Ir, and Pt Molecules and Clusters

C. Sénémaud, J. Blaise, J. Wyart, 1988 .

Chemical vapor deposition of tungsten oxides: A comparative study by X-ray photoelectron spectroscopy, X-ray diffraction and reflection high energy electron diffraction

C. Sénémaud, G. Dufour, H. Roulet, 1984 .

Adhesion of a thin silicon oxide film on a polycarbonate substrate

A. Gheorghiu, B. Drévillon, C. Sénémaud, 1993 .

Adhesion mechanisms of silica layers on plasma-treated polymers. Part II. Polypropylene

R. Brenot, L. Martinu, A. Gheorghiu, 1996 .

Experimental study of partial densities of states in MoSi2

C. Sénémaud, C. Bonnelle, F. Vergand, 1987 .

Wavelengths of x-ray emission lines and absorption edges

C. Sénémaud, Y. Cauchois, 1978 .

Ru, Rh, Pd, Os, Ir, and Pt Atoms and Atomic Ions

C. Sénémaud, J. Blaise, J. Wyart, 1988 .

XPS studies of disorder effects in flash-evaporated amorphous GaAs

A. Gheorghiu, C. Sénémaud, M. Thèye, 1985 .

Studies of evaporated amorphous GeSe films as a function of annealing

A. Gheorghiu, K. Kandil, C. Sénémaud, 1991 .

X-ray photoelectron spectra of adhesion-enhanced a-Si:H on stainless steel induced by plasma treatments

B. Drévillon, C. Sénémaud, N. Bertrand, 1998 .

Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

E. Sleeckx, A. Gheorghiu, N. Qamhieh, 1996 .

Adhesion improvement of plasma-deposited silica thin films on stainless steel substrate studied by x-ray photoemission spectroscopy and in situ infrared ellipsometry

L. Martinu, A. Gheorghiu, B. Drévillon, 1998 .

Nanostructured silicon-based powders and composites

A. Legrand, C. Sénémaud, 2002 .

Electronic structure of hydrogenated amorphous silicon-germanium alloys studied by X-ray photoelectron spectroscopy and soft-X-ray spectroscopy

I. Ardelean, C. Sénémaud, C Sénémaud, 1990 .

Structural determination of sintered Si3N4/SiC nanocomposite using the XPS differential charge effect

C. Sénémaud, M. Mayne, G. Dufour, 2000 .

Defect states in amorphous InP

A. Gheorghiu, C. Sénémaud, J. Dupin, 1987 .

Empty s-d-state distributions in amorphous GexSe1-x alloys

C. Sénémaud, E. Belin, S. Guita, 1991 .

Electronic structure of Ge–As–Te glasses

P. Lippens, J. Jumas, J. Olivier-Fourcade, 2000 .

Studies of short-range order in amorphous Ge x Se100−x compounds by X-ray photoelectron spectroscopy

M. F. Kotkata, A. Gheorghiu, K. Kandil, 1994 .

Densities of states of black phosphorus by soft X-ray spectroscopy

A. Szász, C. Sénémaud, E. Belin, 1988 .

Electronic structure of red amorphous phosphorus studied by X-ray spectroscopy

C. Sénémaud, E. Belin, S. Zuckerman, 1982 .

Electronic properties of the crystalline phases of the Sb 2 S 3 − T l 2 S system

A. Gheorghiu, P. Lippens, J. Jumas, 1997 .

K X-ray spectra of amorphous and crystalline silicon

C. Sénémaud, M. Lima, 1979 .

CHAPTER 22 – Band Structure of Semiconductors by X-ray Spectroscopy

C. Sénémaud, 1982 .

Description of the electronic density of states of a-C:H films with low and high optical gaps

C. Cardinaud, A. Gheorghiu, C. Sénémaud, 1995 .

Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopies

C. Sénémaud, 1996 .

Local electronic structure of Tl–Sn–Te compounds

Jean-Claude Jumas, Josette Olivier-Fourcade, P. Lippens, 1999 .

Electronic structure of As2Te3–GeTe crystalline compounds

P. Lippens, J. Olivier-Fourcade, C. Sénémaud, 2001 .

2p–3d Emission in Ionic Compounds of Nickel

C. Sénémaud, C. Bonnelle, E. Belin, 1978 .

Observation of a plasmon structure in theKphotoabsorption of magnesium and aluminum

C. Sénémaud, 1978 .

Density of states of a-Si1−yNiy:H alloys determined by X-ray and optical spectroscopies

A. Gheorghiu, C. Sénémaud, E. Davis, 1993 .

Beam-foil spectroscopy of 2p to 1s transitions in Si XI to Si XIV ions

C. Sénémaud, J. Bruneau, R. Barchewitz, 1986 .

Electronic structure of amorphous hydrogenated silicon by soft x-ray spectroscopy

C. Sénémaud, B. Bourdon, B. Pitault, 1982 .

Direct observation of occupied gap states in amorphous Si1−xGex: H alloys by SXS

C. Sénémaud, C. Cardinaud, G. Villela, 1984 .