D. Chadi

发表

Transferability of Tight-Binding Matrix Elements

D. Chadi, 1989 .

Calculation of the atomic geometries of the (110) surfaces of III-V compound semiconductors

C. Duke, D. Chadi, C. Mailhiot, 1985 .

Tight‐binding calculations of the valence bands of diamond and zincblende crystals

Marvin L. Cohen, D. Chadi, D. J. Chadi, 1975 .

Holographic storage media based on optically active bistable defects

Richard A. Linke, Ian Redmond, T. Thio, 1998 .

Special Points in the Brillouin Zone

Marvin L. Cohen, D. Chadi, Dj Chadi, 1973 .

Special points for Brillouin-zone integrations

D. Chadi, D. J. Chadi, 1977 .

Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1′ center in α-quartz

D. Chadi, 2003 .

Atomic structure ofDX centers: Theory

Shengbai Zhang, D. Chadi, S. B. Zhang, 1991 .

Theory of DX Centers in Al x Ga 1-x Alloys

Shengbai Zhang, D. Chadi, 1989 .

Pressure dependence of the band structure of 2H-SnS2

M. J. Powell, D. Chadi, W. Y. Liang, 1978 .

Vacancy in Silicon Revisited: Structure and Pressure Effects

E. Kaxiras, D. Chadi, A. Antonelli, 1998 .

Spin relaxation of conduction electrons in GaAs

R. Burnham, A. Clark, R. White, 1976 .

Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces

D. Chadi, 1978 .

A new class of defects in highly n-doped silicon

D. Muller, P. Voyles, D. Chadi, 2003 .

FERMI-LEVEL-PINNING DEFECTS IN HIGHLY N-DOPED SILICON

C. H. Park, M. Marcus, H. Gossmann, 1997 .

Self‐compensation through a large lattice relaxation in p‐type ZnSe

D. Chadi, K. Chang, 1989 .

Stability of deep donor and acceptor centers in GaN, AlN, and BN

D. Chadi, C. Park, 1997 .

Reexamination of the Si(100) surface reconstruction.

D. Chadi, 1980, Applied optics.

Column V acceptors in ZnSe: Theory and experiment

D. Chadi, 1991 .

Self-compensation in nitrogen-doped ZnSe

D. Chadi, N. Troullier, 1993 .

Microscopic structure of DX centers of column III and VII impurities in CdTe

D. Chadi, C. Park, 1995 .

DX centers in II-VI semiconductors and heterojunctions

J. W. Bennett, T. Thio, R. Linke, 1996 .

Bulk electronic structure of SiO 2

J. Joannopoulos, R. Laughlin, D. Chadi, 1979 .

Reflectivities and Electronic Band Structures of CdTe and HgTe

D. Chadi, M. Balkanski, John P. Walter, 1972 .

Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfaces

R. D. Sole, D. Chadi, R. Sole, 1981 .

Theory of the electronic and atomic structure of Si(111): Surface spin‐polarization effects

R. D. Sole, D. Chadi, R. Sole, 1982 .

Step-formation energies and domain orientations at Si(111) surfaces

J. Chelikowsky, D. Chadi, D. J. Chadi, 1981 .

Si(100) surfaces: Atomic and electronic structures

D. Chadi, 1979 .

(2 × 1) reconstructed Si(001) surface: Self-consistent calculations of dimer models

J. Ihm, D. Chadi, M. Cohen, 1980 .

MICROSCOPIC STUDY OF OXYGEN-VACANCY DEFECTS IN FERROELECTRIC PEROVSKITES

D. Chadi, C. Park, 1998 .

110) surface atomic structures of covalent and ionic semiconductors

D. Chadi, 1979 .

Intrinsic and H-induced defects at Si-SiO 2 interfaces

D. Chadi, 2001 .

(110) surface states of GaAs and matrix element effects in angle‐resolved photoemission

D. Chadi, 1978 .

X-Ray Photoemission Valence-Band Spectra and Theoretical Valence-Band Densities of States for Ge, GaAs, and ZnSe

D. A. Shirley, S. P. Kowalczyk, J. Joannopoulos, 1972 .

Peculiar Doping Behavior of Si:Be.

Shengbai Zhang, D. Chadi, K. Chang, 1990 .

ELECTRONIC STRUCTURES OF CRYSTALLINE AND AMORPHOUS SiO2

D. Chadi, 1978 .

Atomic structure of Si(111) surfaces

D. Chadi, 1980 .

Spin-orbit splitting in crystalline and compositionally disordered semiconductors

D. Chadi, 1977 .

Electronic band structures and charge densities of NbC and NbN

D. Chadi, M. Cohen, 1974 .

Atomic Pseudopotentials and the Ionicity Parameter of Phillips and Van Vechten

D. Chadi, W. Grobman, M. Cohen, 1973 .

Theoretical study of the As(100) surface reconstruction of GaAs

J. Joannopoulos, J. Ihm, D. Chadi, 1983 .

Theoretical study of the atomic and electronic structure of the c-4x4 reconstructed GaAs(100) surface

J. Ihm, D. Chadi, C. Tanner, 1982 .

Theoretical study of the atomic and electronic structure of the c-4x4 reconstructed GaAs(100) surface

J. Ihm, D. Chadi, C. Tanner, 1982 .

First principles study of Pb vacancies in PbTiO3

D. Chadi, S. Pöykkö, 2000 .

Frequency- and wave-number-dependent dielectric function of semiconductors

D. Chadi, R. White, D. J. Chadi, 1975 .

Theoretical study of the electronic structure of a high-angle tilt grain boundary in Si

D. Chadi, R. E. Thomson, 1984 .

Atomic and electronic structures of (111), (211), and (311) surfaces of GaAs

D. Chadi, 1985 .

Surface resonances and the oxidation of single‐crystal aluminum

R. S. Bauer, D. Chadi, R. Bachrach, 1978 .

Electronic Structure of Hg 1 − x Cd x Te Alloys and Charge-Density Calculations Using Representative k Points

D. Chadi, M. Cohen, 1973 .

Electronic structure of Si(111) surfaces

R. S. Bauer, W. Göpel, D. Chadi, 1980 .

Atomic and Electronic Structures of Reconstructed Si(100) Surfaces

D. Chadi, D. J. Chadi, 1979 .

Crystalline Structure Around the Single Vacancy in Silicon: Formation Volume and Stress Effects

E. Kaxiras, D. Chadi, A. Antonellip, 1998 .

Unoccupied surface resonances on aluminum single crystal surfaces

A. Bianconi, D. Chadi, R. Bachrach, 1978 .

Surface structure and orbital symmetries of (110) surface states of GaAs

D. Chadi, 1978 .

(110) surface states of GaAs: Sensitivity of electronic structure to surface structure

D. Chadi, Dj Chadi, 1978 .

Semiconductor surface reconstruction

D. Chadi, 1983 .

Energy-minimization approach to the atomic geometry of semiconductor surfaces

D. Chadi, D.J Chadi, 1978 .

Angular momentum decomposition of k = 0 Bloch functions in group IV and zincblende crystals

D. Chadi, 1976 .

Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces

D. Chadi, D. J. Chadi, 1987 .

Scaling studies of the resistance of the one-dimensional Anderson model with general disorder

J. Joannopoulos, A. Stone, D. Chadi, 1981 .

Theoretical study of the atomic structure of silicon (211), (311), and (331) surfaces

D. Chadi, 1984 .

Theory of the Magnetic Susceptibility of Tetrahedral Semiconductors

R. White, W. Harrison, D. Chadi, 1975 .

Atomic structure of reconstructed group IV and III–V semiconductor surfaces

D. Chadi, 1989 .

Sb overlayers on (110) surfaces of III–V semiconductors: A new type of chemical bond

C. Duke, D. Chadi, C. Mailhiot, 1985 .

THEORETICAL STUDY OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GASE NANOTUBES

M. Côté, D. Chadi, M. Cohen, 1998 .

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs

D. Chadi, 1984 .

Metastability of two-hydrogen complexes in silicon

D. Chadi, 2003 .

Ab initio study of dipolar defects and 180° domain walls in PbTiO3

D. Chadi, S. Pöykkö, 2000 .

Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende Semiconductors

James R. Chelikowsky, J. Chelikowsky, Marvin L. Cohen, 1973 .

Electronic structure of the Al-GaAs(110) surface chemisorption system

J. Chelikowsky, D. Chadi, M. Cohen, 1981 .

Chemisorption site geometry and interface electronic structure of Ga and Al on GaAs(110)

D. Chadi, R. Bachrach, 1979 .

First-Principles Study of Structural Bistability in Ga- and In-Doped CdF 2

D. Chadi, C. Park, 1999 .

Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states

D. Chadi, 2003 .

Unusual Properties of Impurities and Defects: Challenges and Opportunities

D. Chadi, 1996 .

Total‐energy calculations on the Takayanagi model for the Si(111) 7×7 surface

D. Chadi, Guo-Xin Qian, 1986 .

New adatom model for Si(111) 7×7 and Si(111)-Ge 5×5 reconstructed surfaces

D. Chadi, 1984 .

Origins of (111) surface reconstructions of Si and Ge

D. Chadi, 1980 .

Atomic structure of polar (111) surfaces of GaAs and ZnSe

D. Chadi, 1986 .

INTRINSIC (111) SURFACE STATES OF Ge, GaAs AND ZnSe

D. Chadi, M. Cohen, 1975 .

Atomic origin of deep levels in p-type GaN: Theory

D. Chadi, 1997 .

π-bonded molecular and chain models for the Si(111) surface

D. Chadi, 1982 .

DIPOLAR DEFECT MODEL FOR FATIGUE IN FERROELECTRIC PEROVSKITES

D. Chadi, S. Poykko, 1999 .

Ab initio study of 180° domain wall energy and structure in PbTiO3

D. Chadi, S. Pöykkö, 1999 .

A MICROSCOPIC MODEL FOR THE Qss DEFECT AT THE Si/SiO2 INTERFACE

G. Lucovsky, D. Chadi, 1980 .

Predictor of p-type doping in II-VI semiconductors

D. Chadi, D. J. Chadi, 1999 .

Halogen impurities in silicon: Shallow single donors

D. Chadi, 1997 .

Calculation of lattice dynamical properties from electronic energies: Application to C, Si and Ge

R. Martin, D. Chadi, 1976 .

Hydrogen-mediated spin-spin interaction in ZnCoO.

C. H. Park, D. Chadi, D. J. Chadi, 2005, Physical review letters.

The Problem of Doping in II-VI Semiconductors

D. Chadi, 1994 .

DX centres in CdZnTe:Cl and their applications

J. W. Bennett, T. Thio, R. Linke, 1996 .

Persistent photoconductivity and DX centers in Cd0.8Zn0.2Te:Cl

J. W. Bennett, T. Thio, R. Linke, 1995 .

Acceptor and donor states of impurities in wide band gap II VI semiconductors

D. Chadi, D. J. Chadi, 1994 .

Hydrogen-induced ferromagnetism in ZnCoO

D. Chadi, Se-Young Jeong, C. Cho, 2006 .

Localized-orbital description of wave functions and energy bands in semiconductors

D. Chadi, D. J. Chadi, 1977 .

Pressure dependence of deep centers in II–VI semiconductors: Theory

D. Chadi, C. H. Park, 1995 .

Self-Compensation in P, As, and N Doped ZnSe

D. Chadi, N. Troullier, 1993 .

Multiple bonding on C(111)‐2×1 surfaces: Surface structural determination from energy minimization

D. Chadi, 1984 .

First-principles study of the atomic reconstructions and energies of Ga- and As-stabilized GaAs(100) surfaces.

Chadi, R. Martin, D. Chadi, 1988, Physical review. B, Condensed matter.

Enumeration of periodic tetrahedral frameworks

Michael Treacy, K. H. Randall, D. Chadi, 1997 .

Theory of impurity and defect induced instabilities

D. Chadi, 1992, Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences.

Study of the reconstructed GaAs(100) surface

J. Joannopoulos, J. Ihm, D. Chadi, 1983 .

Amphoteric nature of vacancies in zinc blende semiconductors

D. Chadi, 2003 .

Self-compensation in nitrogen-doped ZnSe

D. Chadi, N. Troullier, 1993 .

Stoichiometry and surface reconstruction: An ab initio study of GaAs(100) surfaces.

Chadi, R. Martin, D. Chadi, 1988, Physical review letters.

Metastability of the isolated arsenic-antisite defect in GaAs.

Chang, Chadi, D. Chadi, 1988, Physical review letters.

Spin relaxation of conduction electrons in Al x Ga 1-x As

R. Burnham, A. Clark, D. Chadi, 1975 .