M. Jaffe

Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fields

Song Hong, M. Jaffe, J. Singh, 1987 .

A comparison of the electronic properties of thin-period (InAs)(GaAs) and (InAs)(AlAs) superlattices with compositionally similar random alloys

M. Jaffe, J. Singh, 1987, IEEE Transactions on Electron Devices.

Electronic properties of pseudomorphic {InGaAs}/{AlGaAs} (on GaAs) and {InGaAs}/{InAlAs} (on InP) Modfet structures

J. East, Jasprit Singh, M. Jaffe, 1988 .

Evidence for spin splitting in InxGa1-xAs/In0.52Al0.48As heterostructures as B0

S. Datta, P. Bhattacharya, B. Das, 1989 .

Band structure and charge control studies of n‐ and p‐type pseudomorphic modulation‐doped field‐effect transistors

Jasprit Singh, M. Jaffe, 1989 .

In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures

J. Pamulapati, Jasprit Singh, M. Jaffe, 1989 .

Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

Dimitris P. Ioannou, Y. Tan, R. Logan, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors

Jasprit Singh, M. Jaffe, 1987 .