K. Hübner

发表

Bethe‐Lattice Approach to the Electronic Structure of Intrinsic Defects in v‐SiO2

V. Bethkenhagen, K. Hübner, 1984 .

The Nonlinear Dependence of theX Gap in Mixed III-V Semiconductors on Composition

K. Hübner, 1972 .

Decomposition of SiOx Films Due to Internal Stress

K. Hübner, A. Shendrik, A. M. Praulinsh, 1983 .

Cluster‐Bethe‐Lattice Approach to the Electronic Structure of a Twofold Coordinated Silicon Atom as a New Intrinsic Defect in v‐SiO2

V. Bethkenhagen, K. Hübner, 1984 .

Ionicity and electrical conductivity in transition‐metal oxides

K. Hübner, G. Leonhardt, 1975 .

New Methods of IR Spectroscopic Investigation of Amorphous Insulating Films

K. Hübner, U. Teschner, 1988 .

Optical Phonons in Amorphous Silicon Oxides. II. Calculation of Phonon Spectra and Interpretation of the IR Transmission of SiOx

K. Hübner, A. Lehmann, L. Schumann, 1984 .

Structure and properties of the Si-SiO 2 interregion

K. Hübner, 1983 .

Theoretical study of the gradual chemical transition at the Si‐SiO2 interface

K. Hübner, E. Klinkenberg, A. Stern, 1986 .

Electronic Density of States of a Valence-Alternation-Pair Defect at the SiSiO2 Interface

K. Hübner, A. Stern, 1985 .

Electronic Density of States of an SiSiO2 Interface witha Gradual Chemical Transition

K. Hübner, A. Stern, 1984 .

Effective oxygen charge in SiO2 and its dependence on the bond angle of oxygen

K. Hübner, C. Geisser, 1984 .

Chemical bond and related properties of SiO2. II. Structural Trends

K. Hübner, 1977 .

Structure and Properties of the Microelesctronic Si-SiO2 Interregion

K. Hübner, 1985 .

Chemical bond and related properties of SiO2 I. character of the chemical bond

K. Hübner, 1977 .

Electronic and Optical Properties of SiOx

K. Hübner, E. Rogmann, G. Zuther, 1981 .

IR‐Spectroscopic Data of Thin Insulating Films on Semiconductors. New Methods of Interpretation and Analysis

K. Hübner, U. Teschner, 1990 .

Chemical Bond and Related Properties of SiO2

K. Hübner, R. Engelke, H. Neumann, 1979, April 16.

Statistical investigations of the structure of SiOx

K. Hübner, R. Engelke, 1979 .

Chemical bond and related properties of SiO2 III. Core‐level shifts in SiOx

K. Hübner, 1977 .

Raman and Infrared Investigations of Stishovite and Their Interpretation

K. Hübner, A. V. Czarnowski, 1987 .

Ionicity and structure of solids

K. Hübner, V. Bashenov, 1976 .

The Static Electronic Dielectric Constant of Amorphous III-V Compounds

K. Hübner, 1972 .

Ionicity and Effective Charges in II-IV-V2 Compounds

K. Hübner, 1972 .

Spin‐Orbit Splitting and Effective Charges in I‐III‐VI2 Compounds

K. Hübner, K. Unger, 1972 .

Activation parameters of some differently prepared thermoluminophors

K. Hübner, M. Balarin, 1985 .

The pressure dependence of theE2 reflectivity peak and of the dielectric constant in III–V semiconductors

K. Hübner, K. Schulze, 1972 .

On-line monitoring of high-temperature corrosion from superheater materials: KOMET 650 - Sub-project 2.2

K. Hübner, K. Görner, Habil, 2003 .

Optical Phonons in Amorphous Silicon Oxides. I. Calculation of the Density of States and Interpretation of LoTo Splittings of Amorphous Sio2

K. Hübner, A. Lehmann, L. Schumann, 1983 .

Detection of LO and TO Phonons in Amorphous SiO2 Films by Oblique Incidence of IR Light

K. Hübner, A. Lehmann, L. Schumann, 1981 .

DLTS Investigations of Si–SiO2 Interface States of Electron‐Beam Irradiated MOS Structures

K. Hübner, W. Ecke, H. Köster, 1983 .

Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfaces†‡

K. Hübner, 1980 .

Chemical bond and related properties of SiO2. V. Pseudopotential study of bonding and structure

K. Hübner, 1978 .

CHEMICAL BOND AND RELATED PROPERTIES OP SiO2

K. Hübner, 1978 .

Bond Charge Model for the Chemical Shift of the Photoemission in Semiconductors

K. Hübner, M. Schäfer, 1976 .

Temperature dependence of atomic core levels in solids II. Chemical shift and relaxation energy of core levels and their dependence on temperature

F. Bechstedt, K. Hübner, 1979 .

Temperature dependence of atomic core levels in solids I. Separation of the temperature dependence of conduction‐band and core‐exciton energies

F. Bechstedt, K. Hübner, 1979 .

Ionicity and electrical conductivity in transition‐metal compounds

K. Hübner, 1975 .

Mean free path of photoelectrons in silicon and silicon oxides

F. Bechstedt, K. Hübner, 1981 .

Chemical bond and related properties of SiO2 VI. electronic structure of SiOx

K. Hübner, 1979 .

Dispersion of the refractive index and chemical composition of SiOx films

K. Hübner, E. Rogmann, G. Zuther, 1979 .

Chemical bond and related properties of SiO2. IV. Structure of amorphous SiO2

K. Hübner, A. Lehmann, 1978 .

Quantum‐chemical Approach to the Dependence of Oxygen Charge on Bond Angle in SiO2

U. Pietsch, K. Hübner, 1986 .

PHONONS AND SUBMICROCRYSTALLITES IN AMORPHOUS SiO2

K. Hübner, A. Lehmann, L. Schumann, 1980 .

Structural phase transition in SiOx

F. Bechstedt, K. Hübner, 1987 .

Infrared Studies of Reactively Sputtered SiOx Films in the Composition Range 0.2 ≦ x ≦ 1.9

K. Hübner, V. Riede, H. Sobotta, 1982 .

Piezoelectricity in Zincblende‐ and Wurtzite‐Type Crystals

K. Hübner, 1973 .

Energy-gap variation at the Si-SiOx–SiO2 interface

K. Hübner, 1979 .

Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces

K. Hübner, 1980 .

A Comparative ESCA/AES Study of Fourfold and Sixfold Coordinated Silicon Oxides and Implications for MOS Structures

K. Hübner, J. Finster, M. Heinonen, 1988 .