P. Krusius

发表

Band structure of group IVA transition-metal dichalcogenides

H. Isomäki, J. Boehm, P. Krusius, 1979 .

The electronic ground state of the layer compoundsZrS2, TiS2 andTiSe2

H. Isomäki, J. Boehm, P. Krusius, 1977 .

The self-consistent electronic spectrum of the layer crystal TiS2

H. Isomäki, J. Boehm, P. Krusius, 1975 .

OPW Band Structure of Layered TiS2

H. Isomäki, J. Boehm, P. Krusius, 1974 .

Charge density of group IVA transition-metal dichalcogenides

H. Isomäki, J. Boehm, P. Krusius, 1979 .

Interface polarization in silicon on sapphire

P. Krusius, J. Frey, C. Dubé, 1981 .

Charge and momentum density, and Compton profile of Se

P. Krusius, 1977 .

Self-consistent Compton profile of selenium

P. Krusius, J. Treusch, B. Kramer, 1977 .

Self-Consistent Valence Charge Density of the 1T Layer Compounds TiS2, TiSe2, ZrS2 and ZrSe2

H. Isomäki, J. Boehm, P. Krusius, 1980 .

Density of states, charge densities and autocorrelation function of the electronic ground state in orthorhombic sulfur

P. Krusius, B. Kramer, A. Mackinnon, 1980 .

The self-consistent electronic structure of trigonal selenium

J. Boehm, P. Krusius, T. Stubb, 1975 .

The self-consistent symmetrized OPW method with an application to crystalline selenium

J. Boehm, P. Krusius, 1974 .

Charge and Momentum Density, and Compton Profile of Se and Te

P. Krusius, 1979 .

Self-consistent electronic spectrum of trigonal Te. Pressure dependence of energy spectrum

H. Isomäki, J. Boehm, P. Krusius, 1980 .